The influence of N containing plasmas on low-k films

Verdonck, Pascal; Aresti, M.; Ferchichi, Abdelkarim; Besien, Els Van; Stafford, B.; Trompoukis, Christos; Roest, David De; Baklanov, Mikhaı̈l R.

doi:10.1016/j.mee.2010.06.011

Cited by 5 publications

(4 citation statements)

References 9 publications

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“…After the plasma or ultraviolet curing of SiOCH-based ALK, it was reported that the ratio of carbon concentration to oxygen concentration (C/O) decreases and methyl groups (Si-CH 3 ) are replaced by Si-OH. 1,2,22,27,28) Using time-of-flight secondary ion mass spectroscopy for analyzing the samples prepared under using the same deposition condition (without TaN-ALD), it was found that the carbon concentration decreased with the plasma treatments, where the carbon concentration in the subsurface region after the Ar/N 2 -plasma treatment was about half of that after the Ar/H 2 -plasma treatment. 28) Thus, the larger V=T (Figs.…”

Section: Resultsmentioning

confidence: 99%

“…1,2,22,27,28) Using time-of-flight secondary ion mass spectroscopy for analyzing the samples prepared under using the same deposition condition (without TaN-ALD), it was found that the carbon concentration decreased with the plasma treatments, where the carbon concentration in the subsurface region after the Ar/N 2 -plasma treatment was about half of that after the Ar/H 2 -plasma treatment. 28) Thus, the larger V=T (Figs. 2 and 3) and the integrated intensity of the PDF for the Ar/N 2 -plasma-treated sample can be attributed to the effective removal of carbon atoms by the Ar/N 2 -plasma treatment.…”

Section: Resultsmentioning

confidence: 99%

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Characterization of Porous Structures in Advanced Low-k Films with Thin TaN Layers Using Monoenergetic Positron Beams

Uedono

Verdonck

Delabie

et al. 2013

Jpn. J. Appl. Phys.

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Pore sizes and their depth distributions in advanced low-k (ALK) films fabricated using plasma-enhanced chemical vapor deposition were determined using monoenergetic positron beams. The measurement of the energy distributions of annihilation γ-rays and the positron lifetime spectra of the ALK films before and after thin TaN atomic layer deposition showed that Ta atoms diffused into the films. As a result, mean pore size decreased, with the number of larger pores decreasing preferentially. From the measurements of the electron momentum distribution, we found that almost all the inner walls of pores were covered by Ta for the ALK film without pretreatment before TaN deposition. The penetration of Ta into the film, however, was suppressed by plasma treatment using an Ar/N2 or Ar/H2 gas mixture, where the Ar/N2-plasma treatment more effectively blocked Ta diffusion than the Ar/H2-plasma treatment. Through this work, we have demonstrated that monoenergetic positron beams are a powerful tool for characterizing capped porous films and the trapping of metallic atoms by pores.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Characterization of Porous Structures in Advanced Low-k Films with Thin TaN Layers Using Monoenergetic Positron Beams

Uedono

Verdonck

Delabie

et al. 2013

Jpn. J. Appl. Phys.

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“…Extraction of −CH 3 group by H-radicals is enhanced by VUV, which severs these groups leading to the breakage of the Si-C bond and forms volatile H 2 and CH 4 , leaving Si-H bonds [13]. Si-O-Si can also break into Si-H and Si-OH forming hydrophilic sites [2,11].These changes are coupled with structural changes causing densification and porosity reduction [12].…”

Section: Application To Monitoring Changes In Low-κ Dielectric Coatingsmentioning

confidence: 99%

Development of a novel wafer-probe forin situmeasurements of thin film properties

Otell

Marinov

Šamara

et al. 2015

Plasma Sources Sci. Technol.

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We report a new development of a diagnostic technique, referred to as the wafer probe, which enables us to qualitatively monitor the plasma-induced changes in thin film dielectrics, in-situ and in real time. The wafer probe is an adaptation of the well-established ion flux probe technique, also known as RF biased or pulse biased planar Langmuir probe. This technique utilises the top surface of a tile cut from a multi-layer wafer as the probing area. This technique was successfully used to characterise different plasma conditions and monitor the plasma-induced changes in the thin layers of the tile, e.g. a porous organosilicate-glass low-κ dielectrics. The wafer probe was used to monitor the different effects of an argon and a hydrogen plasma on low-κ dielectrics, as well as to monitor the etch rate and endpoint of an Ar/SF 6 plasma.

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“…There have been several reports in literature on plasma damage of low-k materials, [3][4][5] which show that most plasmas not only turn the surface hydrophilic but also the inside of the pores, making the modified low-k film inadequate for further integration.…”

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confidence: 99%

The Effects of Plasma Treatments and Subsequent Atomic Layer Deposition on the Pore Structure of a k = 2.0 Low-k Material

Verdonck

Maheshwari

Swerts

et al. 2013

ECS J. Solid State Sci. Technol.

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In order to improve the characteristics of future integrated circuits, low dielectric constant (low-k) materials are employed. In this paper we describe in detail the characteristics of k = 2.0, SICOH films treated by capacitively coupled Ar/N2 and Ar/H2 plasmas, which were applied in order to modify the top surface of the film. New insights were obtained about the porous structure of the pristine and the plasma treated films: analyses indicated that the investigated plasma treatments reduced the pore size in the top ten nm of the films, while partial carbon depletion was found down to a few tens of nm inside the film. For the integration of metal barriers deposited by Atomic Layer Deposition in interconnect technologies, precursor penetration into the porous low-k dielectric should be avoided. We investigated precursor penetration in the pores during TaN Atomic Layer Deposition on the pristine and the plasma treated porous low-k films. Detailed analyses showed that the plasma induced modifications resulted in a local growth enhancement and pore sealing during the first cycles of the atomic layer deposition process.

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The influence of N containing plasmas on low-k films

Cited by 5 publications

References 9 publications

Characterization of Porous Structures in Advanced Low-k Films with Thin TaN Layers Using Monoenergetic Positron Beams

Characterization of Porous Structures in Advanced Low-k Films with Thin TaN Layers Using Monoenergetic Positron Beams

Development of a novel wafer-probe forin situmeasurements of thin film properties

The Effects of Plasma Treatments and Subsequent Atomic Layer Deposition on the Pore Structure of a k = 2.0 Low-k Material

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