Abstract:The Zn1−xMnxGa2Se4 system with 0.5<x<1, which represents a magnetic dilution of the tetragonal MnGa2Se4, retains the defective chalcopyrite structure of the parent compound. Neutron powder diffraction experiments and temperature dependent magnetic susceptibility measurements show that such dilution has a significant influence on the magnetic properties of the system. The distance between the closest magnetic atoms decreases from a to a∕2Å (where a is the lattice parameter and a≈5.6Å), making the … Show more
“…Room temperature parameters obtained in this work are in good agreement with [12] and [13] The dependence of a, c and σ with temperature and composition is attributed to the combined effect of thermal expansion and changes in the degree of structural order, both at the phase transition and before. For chalcopyrite materials it has been shown that anisotropic thermal expansion occurs, yielding in general an increase of the tetragonal distortion with temperature [31].…”
Section: Neutron Diffractionsupporting
confidence: 79%
“…As regards the Zn 1-x Mn x Ga 2 Se 4 series, electronic band gap and magnetic properties have been shown to vary non-monotonically with composition [9][10][11], a fact that has been attributed to a varying degree of disorder along the series. This hypothesis has been verified in a structural study performed by means of time of flight (TOF) neutron diffraction at room temperature (RT) [10][11][12][13]. As reported in [10], the degree of order is closely related to the Mn occupancy of the available sites: 2d and 2c (if the space group is I-4) or 4d (if it is I- Mn partially occupies the 2d and 2c sites, resulting in 0< η <1.…”
Section: Introductionmentioning
confidence: 62%
“…Three diffraction patterns were collected for each sample: one at room temperature (RT) and two at high temperature but close to the phase transition: one (T 1 ) below T c and the other one table 2). The parameters and space groups determined in [12] and [13] were taken as a starting point to fit the RT diffractograms. For the high temperature diffraction patterns, either below or above T c , several space groups were considered, involving different models of cation and vacancy disorder.…”
We present a study of order-disorder phenomena in the series of tetrahedral ordered vacancy compounds Zn1-xMnxGa2Se4 by means of time-of-flight neutron diffraction at high temperature together with dc magnetic susceptibility, Raman spectroscopy, differential thermal analysis and optical absorption experiments. Samples of nominal composition x = 0, 0.24, 0.5, 0.77 and 1 have been studied. An order-disorder phase transition has been detected, with Tc ranging from 472 to 610 ° C, which involves a structural change from a defect chalcopyrite phase, with I4 space group (s.g.) and three different cation sites, to a partially disordered defect stannite, in which Zn, Mn and half of the Ga ions share the 4d site in I42m s.g. Neither the vacancies nor the Ga ions occupying site 2a are involved in the phase transition. An additional ordering process is observed on approaching the phase transition from below, which is attributed to several factors: the activation of cation diffusion at ∼300 ° C, the partially disordered cation distribution exhibited by the as-grown single crystals and the preference of Mn atoms for the 2d crystallographic site in the I4 structure. The reversibility of the phase transition is analysed with the aid of magnetic, optical and Raman experiments.
“…Room temperature parameters obtained in this work are in good agreement with [12] and [13] The dependence of a, c and σ with temperature and composition is attributed to the combined effect of thermal expansion and changes in the degree of structural order, both at the phase transition and before. For chalcopyrite materials it has been shown that anisotropic thermal expansion occurs, yielding in general an increase of the tetragonal distortion with temperature [31].…”
Section: Neutron Diffractionsupporting
confidence: 79%
“…As regards the Zn 1-x Mn x Ga 2 Se 4 series, electronic band gap and magnetic properties have been shown to vary non-monotonically with composition [9][10][11], a fact that has been attributed to a varying degree of disorder along the series. This hypothesis has been verified in a structural study performed by means of time of flight (TOF) neutron diffraction at room temperature (RT) [10][11][12][13]. As reported in [10], the degree of order is closely related to the Mn occupancy of the available sites: 2d and 2c (if the space group is I-4) or 4d (if it is I- Mn partially occupies the 2d and 2c sites, resulting in 0< η <1.…”
Section: Introductionmentioning
confidence: 62%
“…Three diffraction patterns were collected for each sample: one at room temperature (RT) and two at high temperature but close to the phase transition: one (T 1 ) below T c and the other one table 2). The parameters and space groups determined in [12] and [13] were taken as a starting point to fit the RT diffractograms. For the high temperature diffraction patterns, either below or above T c , several space groups were considered, involving different models of cation and vacancy disorder.…”
We present a study of order-disorder phenomena in the series of tetrahedral ordered vacancy compounds Zn1-xMnxGa2Se4 by means of time-of-flight neutron diffraction at high temperature together with dc magnetic susceptibility, Raman spectroscopy, differential thermal analysis and optical absorption experiments. Samples of nominal composition x = 0, 0.24, 0.5, 0.77 and 1 have been studied. An order-disorder phase transition has been detected, with Tc ranging from 472 to 610 ° C, which involves a structural change from a defect chalcopyrite phase, with I4 space group (s.g.) and three different cation sites, to a partially disordered defect stannite, in which Zn, Mn and half of the Ga ions share the 4d site in I42m s.g. Neither the vacancies nor the Ga ions occupying site 2a are involved in the phase transition. An additional ordering process is observed on approaching the phase transition from below, which is attributed to several factors: the activation of cation diffusion at ∼300 ° C, the partially disordered cation distribution exhibited by the as-grown single crystals and the preference of Mn atoms for the 2d crystallographic site in the I4 structure. The reversibility of the phase transition is analysed with the aid of magnetic, optical and Raman experiments.
“…To this respect, while some authors claim that ZnGa 2 Se 4 crystallizes in the tetragonal ordered defect chalcopyrite (DC) structure with space group (SG) I-4 [see Fig. 1(a)] where cations and vacancies are completely ordered, 7,13,15,16,22 other authors report that ZnGa 2 Se 4 crystallizes in the partially disordered tetragonal defect stannite (DS) structure, also known as defect famatinite, with SG I-42 m and higher symmetry than the DC phase [8][9][10][11][12]21,26 [see Fig. 1(b)].…”
Section: Introductionmentioning
confidence: 99%
“…[1][2][3][4] In particular, ZnGa 2 Se 4 has a high photosensitivity and strong luminescence, 2 can be used for phase change memories, 5 and has been proposed as a candidate for electronic device applications forming part of heterojunction diodes. 6 The properties of ZnGa 2 Se 4 have been characterized by x-ray diffraction (XRD), 7,8 neutron and electron diffraction, [9][10][11][12] extended x-ray absorption fine structure, 13 infrared (IR), 14,15 Raman spectroscopy, [15][16][17][18][19][20][21][22][23][24] and magnetic 25 measurements. To this respect, while some authors claim that ZnGa 2 Se 4 crystallizes in the tetragonal ordered defect chalcopyrite (DC) structure with space group (SG) I-4 [see Fig.…”
High-pressure Raman scattering measurements have been carried out in ZnGa 2 Se 4 for both tetragonal defect chalcopyrite and defect stannite structures. Experimental results have been compared with theoretical lattice dynamics ab initio calculations and confirm that both phases exhibit different Raman-active phonons with slightly different pressure dependence. A pressure-induced phase transition to a Raman-inactive phase occurs for both phases; however, the sample with defect chalcopyrite structure requires slightly higher pressures than the sample with defect stannite structure to fully transform into the Raman-inactive phase. On downstroke, the Raman-inactive phase transforms into a phase that could be attributed to a disordered zincblende structure for both original phases; however, the sample with original defect chalcopyrite structure compressed just above 20 GPa, where the transformation to the Raman-inactive phase is not completed, returns on downstroke mainly to its original structure but shows a new peak that does not correspond to the defect chalcopyrite phase. The pressure dependence of the Raman spectra with this new peak and those of the disordered zincblende phase is also reported and discussed. V C 2013 AIP Publishing LLC.
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