The influence of low-energy ion bombardment on the microstructure development and mechanical properties of TiBx coatings

Mikula, Marián; Grančič, Branislav; Роч, Т.; Pleceník, T.; Vávra, I.; Dobročka, Edmund; Šatka, A.; Buršı́ková, Vilma; Držík, Milan; Záhoran, M.; Plecenı́k, A.; Kúš, P.

doi:10.1016/j.vacuum.2010.12.011

Cited by 50 publications

(19 citation statements)

References 11 publications

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“…The lower B content results in lower hardness (16.4 GPa) compared to TiB 2 -C obtained for this coating. Those hardness values are relatively lower than the hardness reported in other works using the magnetron sputtering technique, which are typically in the 30-50 GPa range [3,6,8,43]. As reported by other researchers, the hardness of TiB 2 coating strongly depends on the residual stress, which results from the combination of deposition temperature, preferred crystal orientation, and substrate bias [3].…”

Section: Analysis Of Deposited Coatingsmentioning

confidence: 57%

Facilitating TiB2 for Filtered Vacuum Cathodic Arc Evaporation

et al. 2020

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TiB2 is well established as a superhard coating with a high melting point and a low coefficient of friction. The brittle nature of borides means they cannot be utilised with arc evaporation, which is commonly used for the synthesis of hard coatings as it provides a high deposition rate, fully ionised plasma and good adhesion. In this work, TiB2 conical cathodes with non-standard sintering additives (carbon and TiSi2) were produced, and the properties of the base material, such as grain structure, hardness, electrical resistivity and composition, were compared to those of monolithic TiB2. The dependence of the produced cathodes’ electrical resistivity on temperature was evaluated in a furnace with an argon atmosphere. Their arc–evaporation suitability was assessed in terms of arc mobility and stability by visual inspection and by measurements of plasma electrical potential. In addition, shaping the cathode into a cone allowed investigation of the influence of an axial magnetic field on the arc spot. The produced cathodes have a bulk hardness of 23–24 GPa. It has been found that adding 1 wt% of C ensured exceptional arc-spot stability and mobility, and requires lower arc current compared to monolithic TiB2. However, poor cathode utilization has been achieved due to the steady generation of cathode flakes. The TiB2 cathode containing 5 wt% of TiSi2 provided the best balance between arc-spot behaviour and cathode utilisation. Preventing cathode overheating has been identified as a main factor to allow high deposition rate (±1.2 µm/h) from TiB2-C and TiB2-TiSi2 cathodes.

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Section: Analysis Of Deposited Coatingsmentioning

confidence: 57%

Facilitating TiB2 for Filtered Vacuum Cathodic Arc Evaporation

et al. 2020

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“…3 applications as wear-resistant coatings on, for example, cutting tools and automotive components, typically consist of transition-metal nitride [11,12,13,14,15,16,17,18,19], carbide [20,21,22,23,24,25], or boride [26,27,28,29,30] nanocrystals encapsulated by a few ML of a covalent interfacial layer (e.g., Si 3 N 4 , SiC, BN, CN x , or C).…”

Section: Accepted M Manuscriptmentioning

confidence: 99%

Si incorporation in Ti1−xSixN films grown on TiN(001) and (001)-faceted TiN(111) columns

Eriksson

Tengstrand

et al. 2014

Surface and Coatings Technology

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“…TiB2, which has a hexagonal AlB2 crystal structure, 1 is a hard (reported hardness values range from 30 to 60 GPa), [2][3][4] high-melting-point (3226 °C), 5 refractory ceramic with excellent tribological [6][7][8] and corrosion-resistance 9,10 properties, relatively low electrical resistivity (reported values range from 6.6 to 400 µΩ.cm), [11][12][13][14] and high thermal and chemical stability. 14 TiB2 thin films are used to increase the wear life and abrasion resistance of cutting tools, 7 dies, 15 and engine components.…”

Section: Introductionmentioning

confidence: 99%

Controlling the B/Ti ratio of TiBx thin films grown by high-power impulse magnetron sputtering

Bakhit

Petrov

Greene

et al. 2018

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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TiBx thin films grown from compound TiB2 targets by magnetron sputter deposition are typically highly over-stoichiometric, with x ranging from 3.5 to 2.4, due to differences in Ti and B preferential-ejection angles and gas-phase scattering during transport from the target to the substrate. Here, the authors demonstrate that stoichiometric TiB2 films can be obtained using high-power impulse magnetron sputtering (HiPIMS) operated in power-controlled mode. The B/Ti ratio x of films sputter-deposited in Ar is controllably varied from 2.08 to 1.83 by adjusting the length of HiPIMS pulses ton between 100 and 30 µs, while maintaining average power and pulse frequency constant. This results in peak current densities JT,peak ranging from 0.27 to 0.88 A/cm 2. Energy-and time-resolved mass spectrometry analyses of ion fluxes incident at the substrate position show that the density of metal ions increases with decreasing ton due to a dramatic increase in JT,peak resulting in strong gas rarefaction. With ton < 60 µs (JT,peak > 0.4 A/cm 2), film growth is increasingly controlled by ions incident at the substrate, rather than neutrals, as a result of the higher plasma dencity and, hence, electronimpact ionization probablity. Thus, since sputter-ejected Ti atoms have a higher probability of being ionized than B atoms, due to their lower first-ionization potential and larger ionization cross-section, the Ti concentration in as-deposited films increases with decreasing

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The influence of low-energy ion bombardment on the microstructure development and mechanical properties of TiBx coatings

Cited by 50 publications

References 11 publications

Facilitating TiB2 for Filtered Vacuum Cathodic Arc Evaporation

Facilitating TiB2 for Filtered Vacuum Cathodic Arc Evaporation

Si incorporation in Ti1−xSixN films grown on TiN(001) and (001)-faceted TiN(111) columns

Controlling the B/Ti ratio of TiBx thin films grown by high-power impulse magnetron sputtering

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