The Influence of Low-Energy Argon Implantation and Out-Diffusion Heat Treatments on Hydrogen Enhanced Thermal Donor Formation in P-Type Czochralski Silicon

Ulyashin, A.; Петлицкий, А. Н.; Job, R.; Fahrner, W. R.; Fedotov, А.К.; Stognii, A. I.

doi:10.4028/www.scientific.net/ssp.69-70.409

Cited by 2 publications

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“…An indication of the importance of interstitials or vacancies in the discussed H-related donor formation was given in Ref. 83, where a strong donor creation as well as counter doping of p-type CZ Si was observed upon low energy implantation of Ar + ions at temperatures of ϳ400°C. Moreover, formation of H-related donors upon H-plasma treatments was essentially accelerated if a p-type CZ Si substrate was subjected to a low energy implantation by Ar + ions.…”

Section: H438mentioning

confidence: 97%

What Do We Know about Hydrogen-Induced Thermal Donors in Silicon?

Simoen

Huang

et al. 2009

J. Electrochem. Soc.

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The hydrogen-plasma-accelerated formation of shallow thermal donors in silicon has been studied for a wide range of doping concentration and interstitial oxygen content [normalOnormali] by electrical and spectroscopic techniques. The plasma-hydrogenated material has been heat treated for different times in the temperature range of 275–500°C . It is shown that, besides oxygen thermal donors (OTDs), hydrogen-related shallow thermal donors (STDHs) also play a crucial role in the hydrogen-assisted creation of excess carriers. The impact of different factors on the introduction rate of the shallow donors will be discussed, whereby a strong role is played by the doping concentration and type (i.e., the Fermi-level position during the thermal anneal in air). Generally, shallow donor formation is faster in p- compared to n-type Si, which is associated with the different charge state of H. From combined deep-level transient spectroscopy and Fourier transform infrared absorption spectroscopy, it is concluded that the additional free carriers are contributed by both STDH and OTD centers, so that H not only plays a catalytic role but actively takes part in the donor formation, depending on the experimental conditions. Finally, from our data some conclusions can be made regarding the nature of the STDHs, which is still a matter of debate.

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Section: H438mentioning

confidence: 97%

What Do We Know about Hydrogen-Induced Thermal Donors in Silicon?

Simoen

Huang

et al. 2009

J. Electrochem. Soc.

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show abstract

“…are formed upon H-plasma treatments and post-treatment anneals, which indicates the presence of interstitials and vacancies during the processing. An indication of the importance of interstitials or vacancies in the discussed H-related donor formation processes was given in [83], where an intensive donor formation process as well as counter doping of p-type Cz Si was observed upon low-energy implantation of Ar + ions at temperatures around 400 ºC. Moreover, formation of H-related donors upon H-plasma treatments was essentially accelerated if a p-type Cz Si substrate was subjected to a low-energy implantation by Ar + ions.…”

Section: Nature Of Stdh Centersmentioning

confidence: 99%

What do We Know About Hydrogen-Induced Thermal Donors?

Simoen¹,

Huang

Ma³

et al. 2008

ECS Trans.

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The hydrogen-plasma-accelerated formation of shallow thermal donors in silicon has been studied for a wide range of doping density and interstitial oxygen content [Oi] by electrical and spectroscopic techniques. The plasma-hydrogenated material has been heat treated for different times in the temperature range of 275 to 500 oC. It is shown that besides Oxygen Thermal Donors (OTDs) also hydrogen related Shallow Thermal Donors (STDHs) play a crucial role in the hydrogen-assisted creation of excess carriers. The impact of different factors on the introduction rate of the shallow donors will be discussed, whereby a strong role is played by the doping density and type, i.e., the Fermi level position during the thermal anneal in air. Generally, shallow donor formation is faster in p- compared with n-type Si, which is associated with the different charge state of H. From combined Deep Level Transient Spectroscopy (DLTS) and Fourier Transform Infrared (FTIR) absorption spectroscopy it is concluded that the additional free carriers are contributed by both STDH and OTD centers, so that H not only plays a catalytic role but actively takes part in the donor formation, depending on the experimental conditions. Finally, from our data some conclusions can be made regarding the nature of the STDHs, which is still a matter of debate.

show abstract

The Influence of Low-Energy Argon Implantation and Out-Diffusion Heat Treatments on Hydrogen Enhanced Thermal Donor Formation in P-Type Czochralski Silicon

Cited by 2 publications

References 0 publications

What Do We Know about Hydrogen-Induced Thermal Donors in Silicon?

What Do We Know about Hydrogen-Induced Thermal Donors in Silicon?

What do We Know About Hydrogen-Induced Thermal Donors?

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