The influence of ion-implantation on the effective Schottky barrier height of NiGe/n-Ge contacts

Tang, Mengrao; Cai, Honghao

doi:10.1016/j.chemphys.2019.110626

Cited by 2 publications

(2 citation statements)

References 23 publications

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“…The high-temperature activation (above 650 • C) ensures more activated dopants and meanwhile a polycrystalline silicide. In addition, a new NiSi 2 (Ge) alloy phase will come into being and P segregation occurs at the alloy/substrate interface [42]. This phenomenon is related to the low dopant solubility of NiSi 2 (Ge) alloy.…”

Section: Resultsmentioning

confidence: 99%

“…As shown in figure S2, the Al/Ni/n + -Si contacts exhibit decent ohmic characteristics at a minimum thermal budget of 450 • C. Compared with the Al/Ni/n + -Si(Ge) systems, this slightly higher ohmic transition temperature may be ascribed to the higher melting point of pure Si materials and thus the highly difficult Ni diffusion process. Another reason may be that for pure Si materials, less ion implantation damage may weaken its role in reducing the effective Schottky barrier height [42]. Notably, highperformance n-type ohmic contacts are obtained at a thermal budget of 400 • C and 450 • C for Si/Ge superlattices and Si materials, respectively.…”

Section: Resultsmentioning

confidence: 99%

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Low-thermal-budget n-type ohmic contacts for ultrathin Si/Ge superlattice materials

Zhang¹,

Yuan²,

Zhao³

et al. 2022

J. Phys. D: Appl. Phys.

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Thermal budget is always a vital element in Si-based superlattice materials processing. In this work, a novel n-type ohmic contacting scheme with a low processing thermal budget is developed by combining the high-dose ion implantation and low-temperature alloying techniques. The optimized specific contact resistivity (ρc) is reduced to 6.18×10-3 Ω·cm² at a low thermal budget of 400 °C, and this is a result of the efficient low-temperature electrical activation in amorphous substances. It is indicated that both the high doping concentration and the formation of NiSi(Ge) alloy phase contribute to the linear ohmic contacting behavior. The ohmic contact resistance dependency on processing temperature is further revealed by a detailed Ni/Si(Ge)-alloying model. A minimum ρc of 2.51×10−4 Ω·cm² is achieved at a thermal budget of 450 °C, which is related to the high bonding intensity at metal/semiconductor interface. Note that this technique is compatible with standard Si-based CMOS process flow, and meanwhile can be applied in high-performance insulated-gate field-effect transistor (IGFET) fabrication. Furthermore, it is verified in our IGFETs that Si/Ge superlattice structures can serve as an efficient potential barrier to constrain electrons.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%