The influence of iodide addition on the composition, morphology, crystal structure, and semiconductor and photoelectric properties of PbS films

Abstract

The concentration conditions for the deposition of lead sulfide and hydroxide in the citrate-ammonia reaction system with varying the pH value and the concentration of the ammonium iodide dopant are...

Charge carrier transport in PbS films doped with iodine

“…Full-profile Rietveld analysis, adapted in the FullProf computer program, established a face-centered cubic lattice of the NaCl type (B1, space group Fm 3 m ) in PbS(I) films and determined their structural characteristics (crystal lattice parameter, microdeformations and the size of coherent scattering regions). 34 However, to obtain more complete information about the crystalline state of the investigated films, in particular, the crystallographic orientation of grains, as well as the estimation of the dislocation density, additional studies of the films were carried out by X-ray diffraction using PbS powder, which is crystal-chemically correct, as a structural model. Fig.…”

“…Using the coherent scattering region D estimated in ref. 34, the dislocation density δ was determined as the length of dislocation lines per unit crystallite surface, according to the Williamson and Smallman formula: 52,53 …”

“…A small decrease in δ , determined by X-ray diffraction, is probably due to the appearance of vacancies in the lead sublattice. 34…”

“…A small decrease in d, determined by X-ray diffraction, is probably due to the appearance of vacancies in the lead sublattice. 34 The results obtained show that considering the dislocation structure, grain misorientation, and charge carrier concentration is an important component in optimizing the photovoltaic properties of thin film lead sulfide.…”

“…The natural effective donor effect of iodine on p-type lead telluride was also demonstrated in works. 32,33 A study 34 showed that chemically deposited PbS films in the presence of NH 4 I do not require additional photosensitization operations and are characterized by high volt-watt sensitivity to IR radiation at abnormally low time constants. Simultaneously, systematic studies on the doping effect of halogens on chemically deposited lead sulfide films and the manifestation of a self-compensation mechanism in them, caused by electrically active impurities and the formation of point defects, have not been carried out.…”