The influence of interstitial Ga and interfacial Au2P3 on the electrical and metallurgical behavior of Au-contacted III-V semiconductors

Weizer, Victor G.; Fatemi, Navid S.

doi:10.1063/1.347432

Cited by 39 publications

(20 citation statements)

References 25 publications

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“…Only saturated solid-phase Au±Ga (about 10 at.-% Ga, a phase) is reported in both systems up to a temperature of 450 C; [18] this compound is formed in an open system even at room temperature if sufficient time is allowed. [19] At higher temperatures, however, further reactions have been reported.…”

Section: Au Interaction With Gap and Gaasmentioning

confidence: 99%

A New Understanding of Au‐Assisted Growth of III–V Semiconductor Nanowires

Dick

Deppert

Karlsson

et al. 2005

Adv Funct Materials

142

150

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Semiconductor nanowires of III–V materials have generated much interest in recent years. However, the growth mechanisms by which these structures form are not well understood. The so‐called vapor–liquid–solid (VLS) mechanism has often been proposed for III–V systems, with a chemically inert, liquid metal particle (typically Au) acting as a physical catalyst. We assert here that Au is, in fact, not inert with respect to the semiconductor material but rather interacts with it to form a variety of intermetallic compounds. Moreover, we suggest that III–V nanowire growth can best be understood if the metallic particle is not a liquid, but a solid‐phase solution or compound containing Au and the group III material. The four materials GaP, GaAs, InP, and InAs will be considered, and growth behavior related to their particular temperature‐dependent interaction with Au.

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Section: Au Interaction With Gap and Gaasmentioning

confidence: 99%

A New Understanding of Au‐Assisted Growth of III–V Semiconductor Nanowires

Dick

Deppert

Karlsson

et al. 2005

Adv Funct Materials

142

150

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“…Au reacts strongly with InP even down to room temperature [19] until the thermodynamically defined equilibrium phase is reached [20]. As a consequence, In depletion from the Au particle alloy via chlorination creates a driving force for dissolving In from the NW/Au-interface into the particle.…”

Section: Resultsmentioning

confidence: 99%

Dynamics of extremely anisotropic etching of InP nanowires by HCl

Borgström

Wallentin

Kawaguchi

et al. 2011

Chemical Physics Letters

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“…The phase of the islands cannot be identified due to the weak diffraction intensity from the small areas. According to the literature [3,8], the phases were likely to be Au 2 P 3 and Au 2 In 3 compounds. The dominant phase in this case was Au 2 P 3 .…”

Section: Resultsmentioning

confidence: 99%

Novel resistance reduction and phase changes of contacts to n-type InP by rapid thermal annealing

et al. 2002

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We studied the influence of n-metal alloy on the long wavelength InP device performance. Various alloy schemes of rapid thermal annealing (RTA) were experimented to obtain the optimized contact resistance for the n-InP/AuGe/Ni/Au/Cr/Au metallization systems. Significant resistance reduction was achieved at 390°C for 45sec with wafer flattening step at 310°C. Using scanning transmission electron microscopy (STEM) and Auger electron spectroscopy (AES) analyses, we showed that resistance was correlated with interfacial reaction at the n-InP/metal. For the high resistance devices, little interfacial reaction between n-InP and Au occurred. For the low resistance devices, significant out-diffusion of P in the bottom Au and Ni layers occurred, forming Au-P and Ni-P metallic compounds. In addition, accumulation of Ge in the Ni layer was also detected. We suggest that Ni-P is very critical in obtaining low contact resistance for n-InP.

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The influence of interstitial Ga and interfacial Au2P3 on the electrical and metallurgical behavior of Au-contacted III-V semiconductors

Abstract: Articles you may be interested inElectrical and metallurgical behavior of Au/Zn contacts to ptype indium phosphide Abstract: Properties of interfacial defects in III-V compound semiconductors

Cited by 39 publications

References 25 publications

A New Understanding of Au‐Assisted Growth of III–V Semiconductor Nanowires

A New Understanding of Au‐Assisted Growth of III–V Semiconductor Nanowires

Dynamics of extremely anisotropic etching of InP nanowires by HCl

Novel resistance reduction and phase changes of contacts to n-type InP by rapid thermal annealing

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