The influence of interlayer exchange coupling in giant-magnetoresistive devices on spin diode effect in wide frequency range

Ziętek, Sławomir; Ogrodnik, Piotr; Skowroński, Witold; Wiśniowski, P.; Czapkiewicz, M.; Stobiecki, T.; Barnaś, J.

doi:10.1063/1.4931771

Cited by 13 publications

(20 citation statements)

References 22 publications

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“…4.6. It should be noted that an analogous diode effect due to GMR has also been observed [247][248][249]. Table 7 summarizes some of the key studies in the development of the spin transfer based spin diode and MTJ rectification and Fig.…”

Section: Spin-transfer Torque Rectification In Magnetic Tunnel Junctionsmentioning

confidence: 87%

Electrical detection of magnetization dynamics via spin rectification effects

2016

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The purpose of this article is to review the current status of a frontier in dynamic spintronics and contemporary magnetism, in which much progress has been made in the past decade, based on the creation of a variety of micro-and nano-structured devices that enable electrical detection of magnetization dynamics. The primary focus is on the physics of spin rectification effects, which are well suited for studying magnetization dynamics and spin transport in a variety of magnetic materials and spintronic devices. Intended to be intelligible to a broad audience, the paper begins with a pedagogical introduction, comparing the methods of electrical detection of charge and spin dynamics in semiconductors and magnetic materials respectively. After that it provides a comprehensive account of the theoretical study of both the angular dependence and line shape of electrically detected ferromagnetic resonance (FMR), which is summarized in a handbook formate easy to be used for analyzing experimental data. We then review and examine the similarity and differences of various spin rectification effects found in ferromagnetic films, magnetic bilayers and magnetic tunnel junctions, including a discussion of how to properly distinguish spin rectification from the spin pumping/inverse spin Hall effect generated voltage. After this we review the broad applications of rectification effects for studying spin waves, nonlinear dynamics, domain wall dynamics, spin current, and microwave imaging. We also discuss spin rectification in ferromagnetic semiconductors. The paper concludes with both historical and future perspectives, by summarizing and comparing three generations of FMR spectroscopy which have been developed for studying magnetization dynamics.

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Section: Spin-transfer Torque Rectification In Magnetic Tunnel Junctionsmentioning

confidence: 87%

Electrical detection of magnetization dynamics via spin rectification effects

2016

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“…The SDE is of great importance from the point of view of further development of magnetic sensors, microwave communication and ultrafast electronics -especially since the nanostructures manufactured nowadays make it possible to get smaller and more efficient electronics elements. 6,8,9 Until now, the SDE was investigated mainly in systems with one ferromagnetic free layer. Although more ferromagnetic layers were present in a device, they were usually assumed to be magnetically stiff (pinned layers).…”

Section: Introductionmentioning

confidence: 99%

Field- and temperature-modulated spin diode effect in a GMR nanowire with dipolar coupling

Ogrodnik

Vetrò

Frankowski

et al. 2018

J. Phys. D: Appl. Phys.

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An analytical model of the spin-diode effect induced by resonant spin-transfer torque in a ferromagnetic bilayer with strong dipolar coupling provides the resonance frequencies and the lineshapes of the magnetic field spectra obtained under field or laser-light modulation. The effect of laser irradiation is accounted for by introducing the temperature dependence of the saturation magnetization and anisotropy, as well as thermal spin-transfer torques. The predictions of the model are compared with experimental data obtained with single Co/Cu/Co spin valves, embedded in nanowires and produced by electrodeposition. Temperature modulation provides excellent signal-to-noise ratio. High temperature-modulation frequency is possible because these nanostructures have a very small heat capacity and are only weakly heat-sunk. The two forms of modulation give rise to qualitative differences in the spectra that are accounted for by the model. 76.50.+g, 75.47.De

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“…In this case, the majority of the RF current flow through a low resistive Cu spacer [8], which produces the RF Oersted field. This field induces the precession of the magnetization vector and, thus, the resistance oscillations through the GMR effect.…”

Section: B Gmrmentioning

confidence: 99%

Microwave detection based on magnetoresistance effect in spintronic devices

Skowroński

Ziętek

Cecot

et al. 2016

2016 21st International Conference on Microwave, Radar and Wireless Communications (MIKON)

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We demonstrate a radio-frequency electromagnetic signal detection in spintronic devices utilizing various magnetoresistance effects. Different device layout is proposed such as tunneling magnetoresistance nano-pillar or giant magnetoresistance stripe, which enable DC voltage generation when a device is supplied with radio-frequency current. Depending on the detection method, sensitivity of up to 80 V/W was achieved in a frequency range between 1 -10 GHz, depending on the magnetic field.

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The influence of interlayer exchange coupling in giant-magnetoresistive devices on spin diode effect in wide frequency range

Cited by 13 publications

References 22 publications

Electrical detection of magnetization dynamics via spin rectification effects

Electrical detection of magnetization dynamics via spin rectification effects

Field- and temperature-modulated spin diode effect in a GMR nanowire with dipolar coupling

Microwave detection based on magnetoresistance effect in spintronic devices

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