The influence of hydrogen ion bombardment on the photovoltaic properties of Cu/Cu<sub>2</sub>O schottky barrier solar cells

Iwanowski, R.J.; Trivich, D.

doi:10.1080/01422448308209643

Cited by 8 publications

(3 citation statements)

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“…2 with the depth profiles of constituent elements determined from AES for Cu/Cu,O junctions obtained by H + ion bombardment [ 121 enables us to explain the possible mechanism of the native IL modification (case B). Incident H + ions, especially those belonging to the high energy tail of their spectrum, when passing through a thin semitransparent Cu electrode of a baseline junction cause a partial reduction of the Cu,O substrate into elemental copper, Cuo (see [12]). This obviously modifies the [Cu'] depth profile of the baseline device (Fig.…”

Section: Case Of Native Interfacial Layermentioning

confidence: 99%

n–V_ocdiagram and the physics of native interfacial layer of the Schottky barrier

Iwanowski¹

1988

Phys. Scr.

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A method of investigating an interface of the Schottky barrier by a photovoltaic effect, earlier introduced by the same author, is examined here in a complex analysis of the interfacial layer effects in Cu;Cu,O junctions. This approach assumes construction of the n-V, (nonideality factor vs open circuit voltage) diagram for the devices studied and its analysis in terms of theoretical model of the tunnel MIS Schottky diode. Two interesting cases from a tutorial viewpoint are considered: the case of native interfacial layer (A) and that of intentionally modified native interfacial layer (B).The first one was studied for the resistively evaporated Cu/Cu20 junctions whereas the second one was experimentally achieved by low energy H+ ion irradiation of the same junction. In each case, different V,, vs n behavior has been noticed at the diagram suggesting that different parameters of an interfacial layer are playing a dominant role. In the case A, the experimental n-V,, diagram, where V,, was almost proportional to n, has been correctly described by theory when assuming constant thickness of an interfacial layer (iso-thickness line). Thus, an increase of n and V, has been associated with rising density of interface states. In the case B, a significant growth of Vic due to H' ion irradiation, accompanied by relatively weak increase of n, has been approximated by iso-density (of interface states) lines at the n-V,, diagram. Therefore the whole effect was ascribed to the rise of an interfacial layer thickness. The possible origin of the native interfacial layer in Cu/Cu20 junctions as well as the mechanism of its modification by H+ ion beam have been also explained here.

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Section: Case Of Native Interfacial Layermentioning

confidence: 99%

n–V_ocdiagram and the physics of native interfacial layer of the Schottky barrier

Iwanowski¹

1988

Phys. Scr.

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“…Many techniques have been used in preparation of Cu 2 O thin films. These include Copper thermal oxidation [17,18], chemical oxidation [19], sol-gel method [20], electro-deposition [21], and gas-phase deposition that includes radio frequency (rf) magnetron or reactive sputtering, vacuum evaporation, molecular beam epitaxy and laser ablation [22]. Among these techniques, sputtering is a versatile and low-cost technique for preparing Cu 2 O thin films [23].…”

Section: Introductionmentioning

confidence: 99%

The Inter-play of the Opto-Electrical Properties of Cuprite and Tenorite Semiconductors for Solar Cell Application

John¹

2017

NANO

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The electrical and optical properties of cuprous oxide (Cu 2 O) thin films prepared by D.C. reactive magnetron sputtering technique have been systematically studied. The influence of the film deposition conditions on the opto-electrical properties has been investigated and has helped to solve the puzzles of difficulties associated with preparation of high quality Cu 2 O films. This is because there is usually co-deposition of phases of Cu, Cu 2 O and CuO during the preparation of Cu 2 O films. From this study, the films deposited at low substrate temperature were found to be less crystalline as compared to those deposited at high substrate temperature. This was corroborated by the drop in the sheet resistivity from ~55.08Ω cm to ~29.66Ω cm and the band gap from ~2.36eV to ~1.63eV for films prepared at substrate temperatures of 23°C and 170°C respectively. Annealing was also found to improve the film crystallinity.

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“…Thin films of polycrystalline Cu 2 O are expected to have many dangling bonds, which act as an interface recombination center on the grain surface. 12,13,[23][24][25] The improvement of the short circuit current density could be a clear signature of reducing interface states and increasing carrier collection efficiency, which is a sign of active passivation while trapping hydrogen and nitrogen between interfaces (Fig. 4(a)).…”

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confidence: 99%

Metal insulator semiconductor solar cell devices based on a Cu2O substrate utilizing h-BN as an insulating and passivating layer

Ergen

Gibb

Vazquez‐Mena

et al. 2015

Applied Physics Letters

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We demonstrate cuprous oxide (Cu2O) based metal insulator semiconductor Schottky (MIS-Schottky) solar cells with efficiency exceeding 3%. A unique direct growth technique is employed in the fabrication, and hexagonal boron nitride (h-BN) serves simultaneously as a passivation and insulation layer on the active Cu2O layer. The devices are the most efficient of any Cu2O based MIS-Schottky solar cells reported to date.

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The influence of hydrogen ion bombardment on the photovoltaic properties of Cu/Cu₂O schottky barrier solar cells

Cited by 8 publications

References 1 publication

n–V_ocdiagram and the physics of native interfacial layer of the Schottky barrier

n–V_ocdiagram and the physics of native interfacial layer of the Schottky barrier

The Inter-play of the Opto-Electrical Properties of Cuprite and Tenorite Semiconductors for Solar Cell Application

Metal insulator semiconductor solar cell devices based on a Cu2O substrate utilizing h-BN as an insulating and passivating layer

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The influence of hydrogen ion bombardment on the photovoltaic properties of Cu/Cu2O schottky barrier solar cells

Cited by 8 publications

References 1 publication

n–Vocdiagram and the physics of native interfacial layer of the Schottky barrier

n–Vocdiagram and the physics of native interfacial layer of the Schottky barrier

The Inter-play of the Opto-Electrical Properties of Cuprite and Tenorite Semiconductors for Solar Cell Application

Metal insulator semiconductor solar cell devices based on a Cu2O substrate utilizing h-BN as an insulating and passivating layer

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The influence of hydrogen ion bombardment on the photovoltaic properties of Cu/Cu₂O schottky barrier solar cells

n–V_ocdiagram and the physics of native interfacial layer of the Schottky barrier

n–V_ocdiagram and the physics of native interfacial layer of the Schottky barrier