The influence of growth temperature on Sb incorporation in InAsSb, and the temperature-dependent impact of Bi surfactants

Sarney, Wendy L.; Svensson, Stefan P.; Anderson, Evan M.; Lundquist, Adam M.; Pearson, Chris; Millunchick, Joanna Mirecki

doi:10.1016/j.jcrysgro.2014.07.048

Cited by 13 publications

(6 citation statements)

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“…We saw this effect in InAsSb, which showed that the Sb 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59incorporation decreased with increasing substrate temperatures [99]. Similarly, over a substrate temperature range of 325-600 o C, the Sb incorporation decreases for fixed Sb/N conditions, as shown in Fig 10(b).…”

Section: Page 19 Of 41 Author Submitted Manuscript -Sst-102578r1mentioning

confidence: 73%

Highly mismatched GaN_1−xSb_xalloys: synthesis, structure and electronic properties

Sarney

Новиков

et al. 2016

Semicond. Sci. Technol.

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Highly mismatched alloys (HMAs) is a class of semiconductor alloys whose constituents are distinctly different in terms of size, ionicity and/or electronegativity. Electronic properties of the alloys deviate significantly from an interpolation scheme based on small deviations from the virtual crystal approximation. Most of the HMAs were only studied in a dilute composition limit. Recent advances in understanding of the semiconductor synthesis processes allowed growth of thin films of HMAs under non-equilibrium conditions. Thus reducing the growth temperature allowed synthesis of group III-N-V HMAs over almost the entire composition range. This paper focuses on the GaNxSb1-x HMA which has been suggested as a potential material for solar water dissociation devices. Here we review our recent work on the synthesis, structural and optical characterization of GaN1-xSbx HMA. Theoretical modeling studies on its electronic structure based on the band anticrossing (BAC) model are also reviewed. In particular we discuss the effects of growth temperature, Ga flux and Sb flux on the incorporation of Sb, film microstructure and optical properties of the alloys. Results obtained from two separate MBE growths are directly compared. Our work demonstrates that a large range of direct bandgap energies from 3.4 eV to below 1.0 eV can be achieved for this alloy grown at low temperature. We show that the electronic band structure of GaN1-xSbx HMA over the entire composition range is well described by a modified the BAC model which includes the dependence of the host matrix band edges as well as the BAC model coupling parameters on composition. We emphasize that the modified BAC model of the electronic band structure developed for the full composition of GaNxSb1-x is general and is applicable to any HMA.

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Section: Page 19 Of 41 Author Submitted Manuscript -Sst-102578r1mentioning

confidence: 73%

Highly mismatched GaN_1−xSb_xalloys: synthesis, structure and electronic properties

Sarney

Новиков

et al. 2016

Semicond. Sci. Technol.

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“…The low incorporation efficiency of Sb is consistent with previous reports. 38,39 Despite the low Sb incorporation, the surfactant properties of Sb could play an important role in the growth kinetics, and potentially promote a more smooth layer by layer buffer growth. The details of this effect are to be further investigated in forthcoming experiments.…”

Section: Resultsmentioning

confidence: 99%

Field effect enhancement in buffered quantum nanowire networks

Krizek

Sestoft

Aseev

et al. 2018

Phys. Rev. Materials

129

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III-V semiconductor nanowires have shown great potential in various quantum transport experiments. However, realizing a scalable high-quality nanowire-based platform that could lead to quantum information applications has been challenging. Here, we study the potential of selective area growth by molecular beam epitaxy of InAs nanowire networks grown on GaAs-based buffer layers. The buffered geometry allows for substantial elastic strain relaxation and a strong enhancement of field effect mobility. We show that the networks possess strong spin-orbit interaction and long phase coherence lengths with a temperature dependence indicating ballistic transport. With these findings, and the compatibility of the growth method with hybrid epitaxy, we conclude that the material platform fulfills the requirements for a wide range of quantum experiments and applications.Material science plays a key role in quantum computing research. Long quantum state lifetimes -the fundamental prerequisite for realizing quantum computers -rely on the ability to produce materials with high purity and structural quality. Together with the requirements of scalability and reproducibility, these properties are what mainly defines the challenges of material science in quantum computing today. Proposals for topological quantum computing, 1-3 which are based on hybrid semiconductor-superconductor nanowire (NW) networks, are being pursued by numerous research groups and have ignited intense research efforts on hybrid epitaxy. 4-8 NW scalability is tightly related to the semiconductor growth approach. Top-down lithography has been used to define NWs in two-dimensional layers 5,9 and a variety of methods have been pursued for alignment and positioning of bottom-up vapor-liquid-solid (VLS) grown NWs, such as dielectrophoresis techniques, 10 nanoscale combing 11 and magnetic aligning of NWs. 12 Despite of these developments, large-scale synthesis of bottom-up grown high-mobility NW networks that are compatible with epitaxial interwire connections and semiconductor/superconductor epitaxy has still not been realized. To realize the epitaxial connections, a lot of effort has been put into the growth of branched NWs via the VLS method. 8,13-15 A scalable approach has been developed in Ref. [16,17] using template assisted growth of inplane NW networks. 18 Nonetheless, this approach is not yet compatible with superconductor epitaxy. An alternative scalable approach is to use lithographically defined openings in a mask on a crystalline substrate. This method is referred to as selective area growth (SAG) and until recently has mainly been used in conjunction with metal organic chemical vapour deposition 19,20 , metal organic vapour phase epitaxy 21,22 , chemical beam epitaxy and metal organic molecular beam epitaxy (chemical beam epitaxy). [23][24][25][26] In contrast to molecular beam epitaxy (MBE), the dissociation kinetics of the chemical precursors in these methods enhance the growth selectivity on masked substrates by expanding the growth parameter window, ...

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“…Another important effect to be considered is the inhibition of the Sb surfactant effect, especially as less Sb may be incorporated in the limit of high temperature growth. While the effects of Sb incorporation on growth temperature have been well established for planar growth [52,53], relatively little data exists for InAsSb NWs. A first indication of a reduced Sb incorporation in InAsSb NWs at higher growth temperature is noted by Sourribes et al [16] by comparing growths at two temperatures.…”

Section: Effect Of Growth Parameters On Sb Incorporation and Nanowire...mentioning

confidence: 99%

Growth dynamics and compositional structure in periodic InAsSb nanowire arrays on Si (111) grown by selective area molecular beam epitaxy

et al. 2021

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We report a comprehensive study of the growth dynamics in highly periodic, composition tunable InAsSb nanowire (NW) arrays using catalyst-free selective area molecular beam epitaxy. Employing periodically patterned SiO2-masks on Si (111) with various mask opening sizes (20–150 nm) and pitches (0.25–2 μm), high NW yield of >90% (irrespective of the InAsSb alloy composition) is realized by the creation of an As-terminated 1 × 1-Si(111) surface prior to NW nucleation. While the NW aspect ratio decreases continually with increasing Sb content (x Sb from 0% to 30%), we find a remarkable dependence of the aspect ratio on the mask opening size yielding up to ∼8-fold increase for openings decreasing from 150 to 20 nm. The effects of the interwire separation (pitch) on the NW aspect ratio are strongest for pure InAs NWs and gradually vanish for increasing Sb content, suggesting that growth of InAsSb NW arrays is governed by an In surface diffusion limited regime even for the smallest investigated pitches. Compositional analysis using high-resolution x-ray diffraction reveals a substantial impact of the pitch on the alloy composition in homogeneous InAsSb NW arrays, leading to much larger x Sb as the pitch increases due to decreasing competition for Sb adatoms. Scanning transmission electron microscopy and associated energy-dispersive x-ray spectroscopy performed on the cross-sections of individual NWs reveal an interesting growth-axis dependent core–shell like structure with a discontinuous few-nm thick Sb-deficient coaxial boundary layer and six Sb-deficient corner bands. Further analysis evidences the presence of a nanoscale facet at the truncation of the (111)B growth front and {1-10} sidewall surfaces that is found responsible for the formation of the characteristic core–shell structure.

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The influence of growth temperature on Sb incorporation in InAsSb, and the temperature-dependent impact of Bi surfactants

Cited by 13 publications

References 13 publications

Highly mismatched GaN_1−xSb_xalloys: synthesis, structure and electronic properties

Highly mismatched GaN_1−xSb_xalloys: synthesis, structure and electronic properties

Field effect enhancement in buffered quantum nanowire networks

Growth dynamics and compositional structure in periodic InAsSb nanowire arrays on Si (111) grown by selective area molecular beam epitaxy

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The influence of growth temperature on Sb incorporation in InAsSb, and the temperature-dependent impact of Bi surfactants

Cited by 13 publications

References 13 publications

Highly mismatched GaN1−xSbxalloys: synthesis, structure and electronic properties

Highly mismatched GaN1−xSbxalloys: synthesis, structure and electronic properties

Field effect enhancement in buffered quantum nanowire networks

Growth dynamics and compositional structure in periodic InAsSb nanowire arrays on Si (111) grown by selective area molecular beam epitaxy

Contact Info

Product

Resources

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Highly mismatched GaN_1−xSb_xalloys: synthesis, structure and electronic properties

Highly mismatched GaN_1−xSb_xalloys: synthesis, structure and electronic properties