The influence of growth rate on the formation and avoidance of C and N related precipitates during directional solidification of multi crystalline silicon

Numerical study of the influence of different types of magnetic fields on the interface shape in directional solidification of multi-crystalline silicon ingots

“…The flow structure is comparable to the results published in Ref. [17]. It can be also seen from particle tracking (Fig.…”

Influence of inclusion on nucleation of silicon casting for photovoltaic (PV) application

“…It has been studied extensively [1,[8][9][10]13,14,17]. In this paper, the commercial software ProCAST is used to simulate the 3D transient casting process, including flow field, temperature, solidification, and corresponding grain growth.…”

“…The formation of SiC and Si 3 N 4 in the crystal causes localized stress that will getter metal impurities [7], which will lower cell efficiency. Therefore, to better understand the formation and consequence of the precipitations and inclusions in cast silicon ingot, a great deal work has been done both experimentally and numerically [1][2][3][4][5][6][7][8][9][10][11][12][13].…”

The Physics of Industrial Crystalline Silicon Solar Cells

“…However, as mentioned above, the current-voltage (I-V ) characteristics of industrial silicon solar cells show significant deviations from the classical two-diode model predictions. This holds particularly for cells made from multicrystalline material, which contain high concentrations of crystal defects like grain boundaries, dislocations, and precipitates, fabricated by the so-called vertical gradient freeze (Trempa et al, 2010) or Bridgman method (Müller et al, 2006). Even the characteristics of industrial monocrystalline cells, which do not contain these crystal defects, deviate from the theoretical predictions.…”