The influence of growth conditions on carrier recombination mechanisms in 1.3 μm GaAsSb/GaAs quantum well lasers

Abstract

We investigate the temperature and pressure dependence of the threshold current density of edge-emitting GaAsSb/GaAs quantum well (QW) lasers with different device characteristics. Thermally activated carrier leakage via defects is found to be very sensitive to the growth conditions of GaAsSb QWs. An optimization of the growth conditions reduces the nonradiative recombination mechanisms from 93% to 76% at room temperature. This improvement in carrier recombination mechanisms leads to a large improvement in the threshold current density from 533 Acm−2/QW to 138 Acm−2/QW and the characteristic temperature, T0 (T1), from 51 ± 5 K (104 ± 16 K) to 62 ± 2 K (138 ± 7 K) near room temperature.

Near Full-Composition-Range High-Quality GaAs1–xSbx Nanowires Grown by Molecular-Beam Epitaxy

“…As one of the most important narrow-bandgap ternary alloy semiconductors, GaAs 1– x Sb x has a bandgap tunable over a large range from about 870 nm (GaAs) to 1720 nm (GaSb) at room temperature, which makes it an attractive material for band structure engineering − and various optoelectronic applications, such as in optical fiber communication systems, infrared light-emitting diodes, photodetectors, lasers, ,, and heterojunction bipolar transistors . In addition, the GaAs 1– x Sb x semiconductor alloy is also a good candidate for study on spintronic devices based on GaAs. − However, the fabrication of high-quality and high Sb content GaAs 1– x Sb x films remains a challenge because there is a large lattice mismatch between the GaAs 1– x Sb x films and III–V semiconductor substrates, and the crystalline quality of the films is very sensitive to growth conditions. ,, …”

“…A s one of the most important narrow-bandgap ternary alloy semiconductors, GaAs 1−x Sb x has a bandgap tunable over a large range from about 870 nm (GaAs) to 1720 nm (GaSb) at room temperature, which makes it an attractive material for band structure engineering 1−3 and various optoelectronic applications, such as in optical fiber communication systems, 4 infrared light-emitting diodes, 5 photodetectors, 7 lasers, 1,6,8 and heterojunction bipolar transistors. 9 In addition, the GaAs 1−x Sb x semiconductor alloy is also a good candidate for study on spintronic devices based on GaAs.…”