The influence of different insulators on paladium-gate metal-insulator-semiconductor hydrogen sensors

Dobos, K.; Armgarth, M.; Zimmer, G.; Lundström, Ingemar

doi:10.1109/t-ed.1984.21558

Cited by 41 publications

(13 citation statements)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…If we assume that the Ni/SiO 2 interface has a fixed number of active sites, the dissolved hydrogen coverage (θ) on this interface, at equilibrium, will be functionally related to the hydrogen gas concentration, whose square root is proportional to the solid-state concentration of hydrogen atoms in nickel, as presented in several references [1,14,[17][18][19]:…”

Section: Resultsmentioning

confidence: 99%

Hydrogen sensors based on Ni/SiO2/Si MOS capacitors

Chen

Saito

2007

Sensors and Actuators B: Chemical

View full text Add to dashboard Cite

Section: Resultsmentioning

confidence: 99%

Hydrogen sensors based on Ni/SiO2/Si MOS capacitors

Chen

Saito

2007

Sensors and Actuators B: Chemical

View full text Add to dashboard Cite

“…In their studies, a prototype Pd/BST/Pt capacitive device was fabricated, and the voltage shift due to the presence of hydrogen at 1000 ppm as high as 4.5 V was measured, which is about 7 times larger than the best value reported in the literature [9][10][11][12][13][14][15][16][17][18][19]. Such voltage shift is believed to originate from the high dielectric constant of amorphous BST thin films, HYDROGEN-SENSITIVE FERROELECTRIC THIN FILM DEVICES 27 which would enhance the dipolar polarization potential at the Pd/BST interface in presence of hydrogen ions.…”

Section: Introductionmentioning

confidence: 88%

“…Nowadays, the general physical description of such semiconductor devices with catalytic metal gates based on the metal-insulator interface has been well established [4][5][6][7][8]. Moreover, further developments on the novel dielectric layer have been carried out to substitute the silicon dioxide layer, such as Si 3 N 4 [9], Ta 2 O 5 [9], Al 2 O 3 SiO 2 [4], Al 2 O 3 [10,11], SiO 2 SiC [12,13], SiC [14], ZnO [15], TiO 2 [16], GaAs [17], and diamond thin film [18,19].…”

Section: Introductionmentioning

confidence: 99%

Hydrogen-Sensitive Amorphous Ferroelectric Thin Film Capacitive Devices

Zhu

Chen

Tan

et al. 2002

Integrated Ferroelectrics

View full text Add to dashboard Cite

Amorphous ferroelectric thin film capacitive gas sensors with a largely improved sensitivity to hydrogen have been developed recently, showing a great promising potential for the next generation hydrogen detection technology. This review presents an overall picture of amorphous ferroelectric thin film hydrogen gas sensors, starting from the hydrogen-damage phenomena of ferroelectric thin films during the forming gas annealing (FGA) process. It stresses on the correlation among processing, microstructural evolution and electric properties of amorphous ferroelectric thin films for fabrication concerns. An attempt is made to detail the hydrogen sensitivity and transient response of various prototype capacitive devices with respect to the instinct of the films and the hydrogen kinetic processes in the Pd/ferroelectric heterostructure. Recent advances on the hydrogen-damage mechanism of ferroelectric thin films and the hydrogen interface-blocking model for amorphous ferroelectric gas sensors are also described.

show abstract

“…Consequently, a fast and sensitive hydrogen sensor is needed for operating in hydrogen environments [4][5][6]. In the past, most of hydrogen sensors are built on Si [7][8][9][10] or III-V compound substrates [11][12][13]. However, these substrate materials are expensive, and thus cannot be used to prepare a low cost sensor for mass application operating at room temperature.…”

Section: Introductionmentioning

confidence: 99%