The Influence of Deposition Conditions on the Photoconductive Properties of Chemically Deposited Lead Sulphide

Büger, P. A.; Malan, O. G.; Kunze, O. A.; Fink, William H.

doi:10.1515/zna-1971-0124

Cited by 3 publications

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“…Responsivity generally increases by increasing resistance and the number of traps formed by doping the PbS layer during the deposition. Noise of PbS cells is also a function of the number of minority carrier traps and resistance 17 . According to Büger 17 the trapping centers may be connected with excess lead atoms deposited in the PbS lattice under the preparation conditions.…”

Section: Introductionmentioning

confidence: 99%

Noise in PbS IR photoresistors

Szentpali

Rakovics

2004

SPIE Proceedings

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PbS photoconductors have been fabricated by the chemical deposition method onto glass substrates. The investigated samples prepared from layers deposited 20 years ago. The photoconductivity of free and encapsulated detectors was investigated at room temperature. The performance of PbS detectors was practically not changed after long time storage at laboratory conditions, or easily recovered after vacuum treatment at 75 o C. The low-frequency (10Hz…20 kHz) noise spectra were measured in dark and during infrared exposure. The carrier lifetime was determined by measuring the frequency response of the device. The changes of the resistance during infrared and ultraviolet exposure were measured too. After the UV illumination the magnitude of the noise levels did not changed too much, however the character of the spectra has definitely changed. The spectra became similar to 1/f indicating that the dominance of generationrecombination noise is less pronounced. The persistent conductivity increase, which occurred by the ultraviolet light is interpreted as the hydration of the oxidized surface.

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Section: Introductionmentioning

confidence: 99%

Noise in PbS IR photoresistors

Szentpali

Rakovics

2004

SPIE Proceedings

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Influence of Sb3+ ions on photoconductive properties of chemically deposited PbS films

Pentia

Pintilie

Tivarus

et al. 2001

Materials Science and Engineering: B

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Field Effect Controlled Photoresistors Based on Chemically Deposited PbS Films

et al. 2001

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MOS-like structures were obtained by chemical deposition of a polycrystalline PbS thin film on top of a silicon dioxide/Si substrate. Gold ohmic electrodes in coplanar configuration were subsequently deposited by vacuum evaporation on PbS surface (drain and source electrodes). The gate aluminum electrode was deposited on the back of the Si substrate. The dependence of the photoconductive signal, generated in the PbS film, on the gate voltage was studied for wavelengths ranging between 800 nm and 3000 nm at room temperature as well as at low temperatures. It was found that the relative variation of the signal could be as high as 50 % for gate voltages ranging between -30 V and +30 V. Two possible mechanisms are proposed to explain the signal variation with the gate voltage: 1) Variation of the depleted region's thickness in the PbS film, that leads to a variation of the conduction channel's resistance (the reference resistance called, also, the dark resistance), 2) The possible variation of the majority carriers (holes) life-time due to the electron blocking at the PbS/oxide interface when positive gate voltages are applied on the back electrode. Integrated IR detectors with controlled sensitivity in the 800-3000 nm range can be manufactured at a relatively low cost using the PbS/oxide/Si MOS-like structure.

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The Influence of Deposition Conditions on the Photoconductive Properties of Chemically Deposited Lead Sulphide

Cited by 3 publications

References 0 publications

Noise in PbS IR photoresistors

Noise in PbS IR photoresistors

Influence of Sb3+ ions on photoconductive properties of chemically deposited PbS films

Field Effect Controlled Photoresistors Based on Chemically Deposited PbS Films

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