The influence of contact materials on the conduction crystallization temperature and electrical properties of amorphous germanium, silicon and boron films

Bosnell, J.R.; Voisey, U.C.

doi:10.1016/0040-6090(70)90036-2

Cited by 87 publications

(6 citation statements)

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“… 46 observed in 1969 that the crystallization of a-Ge happens at low temperature in the proximity with some metals such as Au, Al, Ag, Sn or Cu. Bosnel and Voisey 51 also reported similar finding in the case of a-Si. Vacuum evaporation scheme was used to prepare samples (amorphous semiconductor + metal layer) and electron diffraction technique was used to investigate the crystallization in both the above studies.…”

Section: Brief History and Importance Of Mic Of A-ge And A-sisupporting

confidence: 64%

Perspectives on metal induced crystallization of a-Si and a-Ge thin films

et al. 2022

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Section: Brief History and Importance Of Mic Of A-ge And A-sisupporting

confidence: 64%

Perspectives on metal induced crystallization of a-Si and a-Ge thin films

et al. 2022

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“…It is generally known that the preparation conditions, for instance the residual pressure of 0, during evaporation [6], the nature of the electrodes [7], and the distance between them [8] etc., strongly affect the properties of a-Ge layers.…”

Section: Methodsmentioning

confidence: 99%

Annealing Effects on the Thermoelectric Power and a Model for Low‐Field Conduction in Amorphous Germanium

Vescan

Telnic

Popescu

1972

Physica Status Solidi (b)

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New measurements of the temperature dependence of conductivity u and thermopower Q in a-Ge a t different annealing stages are reported and a previous model for the low-field conduction is developed in order to account for experimental data. The model explains the TI14 law of the conductivity, CT = uo exp (-M T-1/4), gives concrete expressions for uo and M and accounts for the small negative values of Q in the TI14 region. An explanation for the annealing effects is sketched. Neue Messungen der Temperaturabhangigkeit der Leitfihigkeit u und der Thermokraft Q von a-Ge in verschiedenen Stadien der Temperung werden mitgeteilt. Ein fruheres Modell, das die Leitung bei niedrigen Feldern erklaren sollte, wird hier fur die Erklarung der MeDergebnisse weiterentwickelt. Aus dem Modell ergeben sich das T1/4 Gesetz fur die Leitfiihigkeit, u = uo exp (-M !P1I4), konkrete Ausdrucke fur uo und M und eine Erklarung der kleinen negativen &-Werte im TI14 Gebiet. Eine Erkliirung der Temperungseffekte wird skizziert.

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“…The first report of MIC was in 1970 with the crystallization of amorphous germanium by noble metals, aluminum, and tin . Soon after, amorphous silicon was also devitrified at a lowered temperature by metals . The terminology “metal-induced crystallization” is not used often with regard to silica crystallization, but the concept of devitrification using lattice modifiers has been known since the early 1900s. , The effect of dopants on titania crystallization via laser irradiation was first noticed in 1996 .…”

Section: Introductionmentioning

confidence: 99%

Metal-Induced Crystallization in Metal Oxides

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Metrics & MoreArticle Recommendations CONSPECTUS:The properties of a material depend upon its physical characteristics, one of these being its crystalline state. Next generation solid-state technologies will integrate crystalline oxides into thermal sensitive processes and composite materials. Crystallization of amorphous phases of metal oxides in the solid state typically requires substantial energy input to induce the amorphous to crystalline phase transformation. In the case of silica, the transformation to α-quartz in a furnace occurs above 1300 °C and that of titania, above 400 °C. These calcination processes are costly in energy but also often degrade complex material architectures or compositions. Thus, low temperature crystallization techniques are required that preserve macro-and mesostructures and complex elemental composition (e.g., organic-, metal-, and semiconductor-metal oxide hybrids/composites). Some solution-based techniques exist to directly fabricate crystalline metal oxides. However, these are not always compatible with the specificities of the system or industrial constraints. A postsynthetic, solid-state approach that reduces crystallization temperature in metal oxides is metal-induced crystallization (MIC). MIC is the introduction of catalytic amounts of a cation, which can be an s-block, p-block, or d-block cation, that migrates through the solid metal oxide lattice. The cation is thought to temporarily break metal oxide bonds, allowing [MO x ] polyhedra to rotate and reform bonds with neighboring [MO x ] groups in a lower energy crystalline phase. Depending on the system, the cation can favor or defavor the formation of a particular crystalline phase, providing a means to tune the purity and crystalline phase ratios. An advantage of MIC is that, although the crystallization occurs in the solid state, the crystallization process can be accomplished for particle suspensions in liquid media. In this case, the energy required to induce the crystallization can come from, for example, a microwave or an ultrasound bath. The crystallization of particles in suspension avoids aggregation from particle−particle sintering. In the case of thin films, the energy for crystallization typically comes from a laser or calcination. MIC is only recently being used as a low temperature metal oxide crystallization technique, despite being widely used in the semiconductor industry. Here, the mechanism and previous studies in MIC are presented for titania, silica, and other oxides. The beauty of this technique is that it is extremely easy to employ: cations can be incorporated into the system postsynthetically and then are often expelled from the lattice upon phase conversion. We expect MIC to enrich materials for photochromic, optoelectronic, catalyst, biological, and other applications.

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The influence of contact materials on the conduction crystallization temperature and electrical properties of amorphous germanium, silicon and boron films

Cited by 87 publications

References 10 publications

Perspectives on metal induced crystallization of a-Si and a-Ge thin films

Perspectives on metal induced crystallization of a-Si and a-Ge thin films

Annealing Effects on the Thermoelectric Power and a Model for Low‐Field Conduction in Amorphous Germanium

Metal-Induced Crystallization in Metal Oxides

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