The influence of concentration and supersaturation ratio of CuI·HI on CuI crystal growth by decomplexation method

Gu, Ming; Gao, Pan; Liu, Xiaolin; Huang, Shiming; Liu, Bo; Ni, Chen; Xu, Rongkun; Ning, Jiamin

doi:10.1002/crat.200900471

Cited by 8 publications

(4 citation statements)

References 16 publications

(19 reference statements)

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“…Figure shows CuI single crystals made by using the reactor which was not equipped with a stirring mechanism. The shape of this crystal was a tetrahedron exposed with (1̅ 1̅ 1̅) facets (see its XRD pole figure in our Supporting Information, Figure S2), which is similar to the previous report. ,, The maximum edge length of this crystal was about 5 mm. Besides the tetrahedron-shape single crystals, many polycrystals were also formed near the interface between solvent and paraffin.…”

Section: Resultssupporting

confidence: 88%

Growth of Large Single Crystals of Copper Iodide by a Temperature Difference Method Using Feed Crystal Under Ambient Pressure

Koyasu

Umezawa

Baniecki

et al. 2018

Crystal Growth & Design

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A large single crystal of CuI was fabricated by the temperature difference method using NH 4 I aqueous solution. To explore the efficient crystal growth condition, we calculate the phase diagram of copper iodide components as a function of pH and redox potential by using thermodynamic simulation software, and we also measured the experimental solubility curve of CuI. Consequently, we could fabricate the largest CuI single crystal (8.6 × 9.1 × 14 mm 3 ) to date. Crystal shape was also controllable by the stirring condition in the reactor; i.e., tetrahedron or cubic shape of crystals was formed under stirring or without stirring condition, respectively. Further, the highly pure and transparent CuI crystal was fabricated by the addition of sodium sulfite (Na 2 SO 3 ) into NH 4 I aqueous solution. The electronic structure of our high quality CuI single crystal was determined using X-ray photoelectron spectroscopy and ultraviolet photoemission spectroscopy, and the ionization potential of the CuI (001) facet was elucidated to be 5.2 ± 0.2 eV. Even though our CuI crystal was optically transparent, it exhibited low resistivity p-type behavior with high hall mobility (22.1−46.4 cm 2 V −1 s −1 ). The acceptor level of our CuI crystal was also determined by the temperature dependence of the Hall effect property (0.15 ± 0.004 eV), which was consistent with the theoretical calculation on the CuI crystal model with p-type carriers. The present crystal growth method is quite facile and does not require any expensive fabrication equipment. Therefore, our CuI single crystal is expected to be useful as a p-type transparent substrate for the epitaxial growth of various electronic or optical devices, especially for materials with large lattice parameters.

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Section: Resultssupporting

confidence: 88%

Growth of Large Single Crystals of Copper Iodide by a Temperature Difference Method Using Feed Crystal Under Ambient Pressure

Koyasu

Umezawa

Baniecki

et al. 2018

Crystal Growth & Design

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“…[7] Herein,w eu se aH Ia cidassisted organic solventtodissolve CuI and BiI 3 (see the Experimental Section). HI is reported to dissolve BiI 3 and CuI to synthesize or make bulk crystals [8] and is also used as an additive to improve the morphology in MAPbI 3 solar cells. [9] As shown in Figure S1 (in the SupportingI nformation), concentrated HI (57 wt %)-assisted N,N-dimethylacetamide (DMA) completely dissolves CuI and BiI 3 powders (HI/CuI/BiI 3 = 2:1:1) and forms optically transparent, homogeneous solutions.…”

Section: Resultsmentioning

confidence: 99%

Solution‐Processed Air‐Stable Copper Bismuth Iodide for Photovoltaics

Wang

Kapil

et al. 2018

ChemSusChem

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Bismuth-based solar cells have been under intensive interest as an efficient non-toxic absorber in photovoltaics. Within this new family of semiconductors, we herein report a new, long-term stable copper bismuth iodide (CuBiI ). A solutionprocessed method under air atmosphere is used to prepare the material. The adopted HI-assisted dimethylacetamide (DMA) co-solvent can completely dissolve CuI and BiI powders with high concentration compared with other organic solvents. Moreover, the high vapor pressure of tributyl phosphate, selected for the solvent vapor annealing (SVA), enables complete low-temperature (≤70 °C) film preparation, resulting in a stable, uniform, dense CuBiI film. The average grain size increases with the precursor concentration, greatly improving the photoluminescence lifetime and hall mobility; a carrier lifetime of 3.03 ns as well as an appreciable hall mobility of 110 cm V s were obtained. XRD illustrates that the crystal structure is cubic (space group Fd3m) and favored in the [1 1 1] direction. Moreover, the photovoltaic performance of CuBiI was also investigated. A wide bandgap (2.67 eV) solar cell with 0.82 % power conversion efficiency is presented, which exhibits excellent long-term stability over 1008 h under ambient conditions. This air-stable material may give an application in future tandem solar cells as a stable short-wavelength light absorber.

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“…From the literature published very recently on the metastable zone width for the crystallization from fluxes [12] and gels [13], it seems that the behavior of the T 0 -dependence of DT max /T 0 is not unusual.…”

Section: Introductionmentioning

confidence: 94%

On the effect of impurities on the metastable zone width of phosphoric acid

Sangwal

2010

Journal of Crystal Growth

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The influence of concentration and supersaturation ratio of CuI·HI on CuI crystal growth by decomplexation method

Cited by 8 publications

References 16 publications

Growth of Large Single Crystals of Copper Iodide by a Temperature Difference Method Using Feed Crystal Under Ambient Pressure

Growth of Large Single Crystals of Copper Iodide by a Temperature Difference Method Using Feed Crystal Under Ambient Pressure

Solution‐Processed Air‐Stable Copper Bismuth Iodide for Photovoltaics

On the effect of impurities on the metastable zone width of phosphoric acid

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