Abstract:Titanium dioxide films, about 200 nm in thickness, were deposited using the e-BEAM technique at room temperature and at 227 °C (500K) and then annealed in UHV conditions (as well as in the presence of oxygen (at 850 °C). The fabricated dielectric films were examined using X-ray powder diffraction, Raman spectroscopy, X-ray photoelectron spectroscopy, atomic force microscopy, scanning electron microscopy, transmission electron microscopy, and spectroscopic ellipsometry. The applied experimental techniques allow… Show more
“…The values of E g listed in Table 2 were derived using Tauc plot-plotting (αhν) 1/m against photon energy (hν), where m is a parameter related to the type of transition, m = 1 /2, and 2 corresponds to direct allowed transition and indirect allowed transition, respectively. TiO 2 in anatase phase is considered as an indirect semiconductor, where m = 2 [41] while ZnO is a direct semiconductor (m = 1 /2) [42] and Lu 2 O 3 is considered as a direct ultrawide band gap semiconductor (m = 1 /2) [43]. The E g values were obtained with error of ±0.02 eV.…”
Eu3+-doped oxide thin films possess a great potential for several emerging applications in optics, optoelectronics, and sensors. The applications demand maximizing Eu3+ photoluminescence response. Eu-doped ZnO, TiO2, and Lu2O3 thin films were deposited by Pulsed Laser Deposition (PLD). Pulsed UV Laser Annealing (PLA) was utilized to modify the properties of the films. In situ monitoring of the evolution of optical properties (photoluminescence and transmittance) at PLA was realized to optimize efficiently PLA conditions. The changes in optical properties were related to structural, microstructural, and surface properties characterized by X-ray diffraction (XRD) and atomic force microscopy (AFM). The substantial increase of Eu3+ emission was observed for all annealed materials. PLA induces crystallization of TiO2 and Lu2O3 amorphous matrix, while in the case of already nanocrystalline ZnO, rather surface smoothening0related grains’ coalescence was observed.
“…The values of E g listed in Table 2 were derived using Tauc plot-plotting (αhν) 1/m against photon energy (hν), where m is a parameter related to the type of transition, m = 1 /2, and 2 corresponds to direct allowed transition and indirect allowed transition, respectively. TiO 2 in anatase phase is considered as an indirect semiconductor, where m = 2 [41] while ZnO is a direct semiconductor (m = 1 /2) [42] and Lu 2 O 3 is considered as a direct ultrawide band gap semiconductor (m = 1 /2) [43]. The E g values were obtained with error of ±0.02 eV.…”
Eu3+-doped oxide thin films possess a great potential for several emerging applications in optics, optoelectronics, and sensors. The applications demand maximizing Eu3+ photoluminescence response. Eu-doped ZnO, TiO2, and Lu2O3 thin films were deposited by Pulsed Laser Deposition (PLD). Pulsed UV Laser Annealing (PLA) was utilized to modify the properties of the films. In situ monitoring of the evolution of optical properties (photoluminescence and transmittance) at PLA was realized to optimize efficiently PLA conditions. The changes in optical properties were related to structural, microstructural, and surface properties characterized by X-ray diffraction (XRD) and atomic force microscopy (AFM). The substantial increase of Eu3+ emission was observed for all annealed materials. PLA induces crystallization of TiO2 and Lu2O3 amorphous matrix, while in the case of already nanocrystalline ZnO, rather surface smoothening0related grains’ coalescence was observed.
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