“…The efficiency of the prepared photovoltaic devices increased with increasing of dopants to be maximum value at the ratio of doping as 30% doped which exhibited the best photovoltaic performance, the value of Voc is 0.48 V, Jsc is 22.999 mA/cm², FF is 0.2842 and ƞ is 3.0193% which reflected a better power conversion efficiency compared with other devices because of the absorption of incident light was slightly high furthermore, have excitation states which are increased the generated excitons (V. S. Arunachalam and E.L.Fleischer, 2008). The efficiency of the 20%doped decrease comparing with 10% and 30% that, was because surface morphology of the sample was smooth which led to less amount of the absorbed light and given low electron hopping transport, in other words, surface roughness of the active layer considered as important parameter because of its increase the photo-generated charge carriers near the site of contact between active layer and metallic electrode which support high efficient generation, extraction, collection of the photo-generated charge carriers and then the better power conversion efficiency was resulted (Yamamoto K et al, 1998;Riedel I. et al, 2004;Heejoo Kim et al, 2006;Heejoo Kim et al, 2007;Gang Li et al, 2005;Wanli Ma et al, 2005). Also the influence of shunt resistance on short circuit current was resulted due to increase the recombination of charge carrier near the dissociated site which was clear respect to doping process as 20% which led to decrease the power conversion efficiency (L.-M. Chen et al, 2009).…”