The importance of a good solvent of conjugated polymers for preparing dopant solution on the electrical and mechanical properties of sequentially doped conjugated polymer films

Shan, Hongtao; Zhu, Bing‐Yan; Zhou, Jianjun; Hong, Huasheng

doi:10.1039/d2tc04842f

Cited by 5 publications

(5 citation statements)

References 34 publications

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“…The very high roughness of sample 2 films (in Figure S5), as compared to samples 1 and 3, is a strong reminder that also the AFM roughness criterium needs to be handled with care and plausibly applies only to closely similar morphologies. Figure c shows that the in-plane 020 reflection peak of doped form I′ (sample 1) and form I (sample 3) shifts to higher q because F4TCNQ occupies the lamellar region of the crystallites, in accordance with doped P3HT films reported previously. , The in-plane 020 reflection peak position of form II (sample 2) has nearly no change before and after F4TCNQ doping, further verifying that form II of P3BT is difficult to dope with F4TCNQ.…”

Section: Resultssupporting

confidence: 85%

“…Figure 2c shows that the in-plane 020 reflection peak of doped form I′ (sample 1) and form I (sample 3) shifts to higher q because F4TCNQ occupies the lamellar region of the crystallites, in accordance with doped P3HT films reported previously. 45,56 The in-plane 020 reflection peak position of form II (sample 2) has nearly no change before and after F4TCNQ doping, further verifying that form II of P3BT is difficult to dope with F4TCNQ. FTIR spectroscopy is sensitive to the electronic states of F4TCNQ within the doped P3BT samples.…”

Section: ■ Results and Discussionmentioning

confidence: 83%

“…In addition, in each curve, a main anion absorption peak appears at ∼2194 cm –1 . In our previous work, we found that the absorption peak at ∼2194 cm –1 can actually be best fit to three Gaussians at 2185, 2190, and 2194 cm –1 , which are all assigned to the b 1u stretching modes of the ICT anion . The peak position is related to the order of the ICT state.…”

Section: Resultsmentioning

confidence: 88%

“…In our previous work, we found that the absorption peak at ∼2194 cm −1 can actually be best fit to three Gaussians at 2185, 2190, and 2194 cm −1 , which are all assigned to the b 1u stretching modes of the ICT anion. 56 The peak position is related to the order of the ICT state. The lower peak position denotes the more ordered ICT state; namely, the b 1u mode at 2185 cm −1 results from those highly ordered crystalline domains.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

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Influence of Different Polymorphs on the Electrical and Mechanical Properties of F4TCNQ-Doped Regioregular P3BT Films

Zhu,

He,

Shan

et al. 2024

Macromolecules

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In this work, we prepared poly(3-butylthiophene) (P3BT) samples with different polymorphs by spin-coating a P3BT solution to form P3BT films and then carbon disulfide (CS 2 ) vapor annealing and thermal annealing these P3BT films. Combining UV−visible (UV−vis) spectroscopy, grazing-incidence wideangle X-ray diffraction (GIXRD), and Fourier transform infrared (FTIR) spectroscopy, we found that both form I and form I′ of P3BT can be doped with 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ), wherein the higher disorder of butyl side chains and the larger lamella distance of form I made the doping level of form I higher than that of form I′; in addition, form II of P3BT can hardly be doped with F4TCNQ due to the tighter interdigitation of butyl side chains. In accordance with the doping level, the P3BT film with form I can obtain the highest conductivity among the three doped P3BT films with different polymorphs. Intriguingly, doping with F4TCNQ is observed to improve the stretchability and decrease the elastic modulus (E f ) of P3BT films by decreasing the crystallinity and altering the interactions between molecular chains. By doping with the same F4TCNQ solution, the crack onset strain (COS) of doped P3BT film with form I is higher than that of P3BT with form I′. Our work suggests that modulating polymorphs is a new method to prepare doped CP films with simultaneous improvement in both electrical and stretchability performance and may offer a new direction of research on stretchable semiconductors to facilitate future practical applications.

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Section: Resultssupporting

confidence: 85%

Section: ■ Results and Discussionmentioning

confidence: 83%

Section: Resultsmentioning

confidence: 88%

Section: ■ Results and Discussionmentioning

confidence: 99%

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Influence of Different Polymorphs on the Electrical and Mechanical Properties of F4TCNQ-Doped Regioregular P3BT Films

Zhu,

He,

Shan

et al. 2024

Macromolecules

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“…In that strategy, the dopant is brought into contact with the P3HT film after casting the latter onto a solid substrate . For example, the introduction of the dopant has been made by dipping the film into a dopant solution, through spin-coating or drop-casting of a dopant solution onto the film but also by evaporation. ,,− Several authors reported that sequential doping does not affect the crystallinity and morphology of P3HT films. ,,,, They also evidenced a direct correlation between the values of the electronic conductivity measured after doping with F 4 TCNQ vapors and the crystallinity degree of the pristine P3HT film, varied through the solvent used for spin-coating regioregular P3HT or the fraction of regioregular and regiorandom P3HT. , At the same doping level, Jacobs et al . also evidenced that dipping into the F 4 TCNQ solution of spin-coated P3HT films resulted in enhanced conductivities approaching 10 S/cm, i.e., an order of magnitude greater than those measured for the films prepared by spin-coating P3HT:F 4 TCNQ blend .…”

Section: Introductionmentioning

confidence: 99%

Coprocessing of F₄TCNQ Dopant and Poly(3-alkylthiophene) in a Two-Dimensional Bilayer

Fernandez,

El Haitami,

Spagnoli

et al. 2024

Macromolecules

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Doping organic semiconductors to modify and enhance their electronic properties is a crucial step in the development of these devices. In this study, a liquid surface is used to organize poly(3-hexylthiophene) (P3HT) in a homogeneous highly crystalline nanometer-thick bilayer that can subsequently be transferred onto a chosen solid substrate without impacting its structure. Coprocessing of various amounts of F 4 TCNQ as dopant and P3HT was investigated to obtain, for the first time to our knowledge, an F 4 TCNQ-doped polymer layer preorganized on a liquid substrate. The optical and electrical properties, as well as the structure and morphology of the doped layer, were determined on liquid and solid substrates using a large range of experimental techniques adapted to each substrate. Our findings revealed that optimal doping is obtained when the molar ratio of the F 4 TCNQ: thiophene unit is 1:4. A 2D-organized F 4 TCNQ-doped P3HT bilayer with an edge-on orientation was formed on both substrates. The bilayer thickness is close to 4 nm, and the F 4 TCNQ dopant was found to be intercalated within the alkyl side-chain interlayer. In addition, two in-plane crystalline structures were observed to coexist, the major one corresponding to F 4 TCNQ-doped P3HT and the minority one to neutral polymer. The in-plane lattice associated with each phase was completely determined, emphasizing the high order achieved through such a coprocessing method on a liquid substrate compared with usual drop-casting techniques. This resulted in the bilayer in-plane electronic conductivity of about 0.1 S/cm reaching 5 S/cm for the 5-bilayer film due to the contribution of out-of-plane charge transport.

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Enhancing Electrical Conductivity and Power Factor in Poly‐Glycol‐Bithienylthienothiophene with Oligoethylene Glycol Side Chains Through Tris (pentafluorophenyl) Borane Doping

Chen,

Mukhopadhyay,

Song

et al. 2024

Adv Funct Materials

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Doping of organic semiconductors has served as an effective method to achieve high electrical conductivity and large thermoelectric power factor. This is of importance to the development of flexible/wearable electronics and green energy‐harvesting technologies. The doping impact of the Lewis acid tris (pentafluorophenyl) borane (BCF) on the thermoelectric performance of poly(2‐(4,4′‐bis(2‐methoxyethoxy)‐5′‐methyl‐[2,2′‐bithiophen]‐5‐yl)‐5‐methylthieno[3,2‐b]thiophene (pgBTTT), a thiophene‐based polymer featuring oligoethylene glycol side chains is investigated. Tetrafluorotetracyanoquinodimethane (F4TCNQ), a well‐established dopant, is utilized as a comparison; however, its inability to co‐dissolve with pgBTTT in less polar solvents hinders the attainment of higher doping levels. Consequently, a comparative study is performed on the thermoelectric behavior of pgBTTT doped with BCF and F4TCNQ at a very low doping level. Subsequent investigation is carried out with BCF at higher doping levels. Remarkably, at 50 wt% BCF doping level, the highest power factor of 223 ± 4 µW m−1 K2 is achieved with an electrical conductivity of 2180 ± 360 S cm−1 and a Seebeck coefficient of 32 ± 1.3 µV K−1. This findings not only contribute valuable insights to the dopant interactions with oxygenated side chain polymers but also open up new avenues for high conductivity thermoelectric polymers in flexible electronic applications.

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The importance of a good solvent of conjugated polymers for preparing dopant solution on the electrical and mechanical properties of sequentially doped conjugated polymer films

Cited by 5 publications

References 34 publications

Influence of Different Polymorphs on the Electrical and Mechanical Properties of F4TCNQ-Doped Regioregular P3BT Films

Influence of Different Polymorphs on the Electrical and Mechanical Properties of F4TCNQ-Doped Regioregular P3BT Films

Coprocessing of F₄TCNQ Dopant and Poly(3-alkylthiophene) in a Two-Dimensional Bilayer

Enhancing Electrical Conductivity and Power Factor in Poly‐Glycol‐Bithienylthienothiophene with Oligoethylene Glycol Side Chains Through Tris (pentafluorophenyl) Borane Doping

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The importance of a good solvent of conjugated polymers for preparing dopant solution on the electrical and mechanical properties of sequentially doped conjugated polymer films

Cited by 5 publications

References 34 publications

Influence of Different Polymorphs on the Electrical and Mechanical Properties of F4TCNQ-Doped Regioregular P3BT Films

Influence of Different Polymorphs on the Electrical and Mechanical Properties of F4TCNQ-Doped Regioregular P3BT Films

Coprocessing of F4TCNQ Dopant and Poly(3-alkylthiophene) in a Two-Dimensional Bilayer

Enhancing Electrical Conductivity and Power Factor in Poly‐Glycol‐Bithienylthienothiophene with Oligoethylene Glycol Side Chains Through Tris (pentafluorophenyl) Borane Doping

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Coprocessing of F₄TCNQ Dopant and Poly(3-alkylthiophene) in a Two-Dimensional Bilayer