The Impact of Thermal Boundary Resistance in Phase-Change Memory Devices

Reifenberg, John P.; Kencke, D.L.; Goodson, Kenneth E.

doi:10.1109/led.2008.2003012

Cited by 114 publications

(64 citation statements)

References 28 publications

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“…2a), finiteelement simulations indicate that the maximum temperature is reached very close to the bottom electrode [27][28][29] . This is due to the significant asymmetry between the dimensions of the top and bottom electrodes.…”

Section: Resultsmentioning

confidence: 99%

Crystal growth within a phase change memory cell

2014

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In spite of the prominent role played by phase change materials in information technology, a detailed understanding of the central property of such materials, namely the phase change mechanism, is still lacking mostly because of difficulties associated with experimental measurements. Here, we measure the crystal growth velocity of a phase change material at both the nanometre length and the nanosecond timescale using phase-change memory cells. The material is studied in the technologically relevant melt-quenched phase and directly in the environment in which the phase change material is going to be used in the application. We present a consistent description of the temperature dependence of the crystal growth velocity in the glass and the super-cooled liquid up to the melting temperature.

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Section: Resultsmentioning

confidence: 99%

Crystal growth within a phase change memory cell

2014

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“…The low TBC at internal CNT-CNT junctions, as well as at their connections to the host polymer and surrounding boundaries, prevents the use of CNTs in thermal interface materials (21). Similarly, TBC is a crucial parameter in phase change materials for data storage (22) as well as in composites for thermal energy storage (23). TBC due to scattering at grain boundaries can also be a limiting factor for heat conduction in nanograined polycrystalline solids.…”

Section: Motivation and Applicationsmentioning

confidence: 99%

Thermal Boundary Conductance: A Materials Science Perspective

Monachon

Weber

Dames

2016

Annu. Rev. Mater. Res.

210

140

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The thermal boundary conductance (TBC) of materials pairs in atomically intimate contact is reviewed as a practical guide for materials scientists. First, analytical and computational models of TBC are reviewed. Five measurement methods are then compared in terms of their sensitivity to TBC: the 3ω method, frequency-and time-domain thermoreflectance, the cut-bar method, and a composite effective thermal conductivity method. The heart of the review surveys 30 years of TBC measurements around room temperature, highlighting the materials science factors experimentally proven to influence TBC. These factors include the bulk dispersion relations, acoustic contrast, and interfacial chemistry and bonding. The measured TBCs are compared across a wide range of materials systems by using the maximum transmission limit, which with an attenuated transmission coefficient proves to be a good guideline for most clean, strongly bonded interfaces. Finally, opportunities for future research are discussed.

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“…Several experimental works reported on the measurements of the bulk thermal conductivity of the prototypical GeSbTe phase change alloys [6][7][8][9] and the related binary compounds GeTe [10][11][12][13][14][15] and Sb 2 Te 3 [11,16]. These compounds have a relatively low lattice thermal conductivity in the crystalline phase which has been ascribed to a strong phonon scattering by disordered point defects.…”

Section: Introductionmentioning

confidence: 99%

First-principles calculation of lattice thermal conductivity in crystalline phase change materials: GeTe, Sb2Te3 , and Ge2
Campi
¹
,
Paulatto
²
,
Fugallo
³

et al. 2017
Phys. Rev. B
104
17
85
0
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Thermal transport is a key feature for the operation of phase change memory devices which rest on a fast and reversible transformation between the crystalline and amorphous phases of chalcogenide alloys upon Joule heating. In this paper we report on the ab initio calculations of bulk thermal conductivity of the prototypical phase change compounds Ge 2 Sb 2 Te 5 and GeTe in their crystalline form. The related Sb 2 Te 3 compound is also investigated for the sake of comparison. Thermal conductivity is obtained from the solution of the Boltzmann transport equation with phonon scattering rates computed within density functional perturbation theory. The calculations show that the large spread in the experimental data on the lattice thermal conductivity of GeTe is due to a variable content of Ge vacancies which at concentrations realized experimentally can halve the bulk thermal conductivity with respect to the ideal crystal. We show that the very low thermal conductivity of hexagonal Ge 2 Sb 2 Te 5 of about 0.45 W m −1 K −1 measured experimentally is also resulting from disorder in the form of a random distribution of Ge/Sb atoms in one sublattice.

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The Impact of Thermal Boundary Resistance in Phase-Change Memory Devices

Cited by 114 publications

References 28 publications

Crystal growth within a phase change memory cell

Crystal growth within a phase change memory cell

Thermal Boundary Conductance: A Materials Science Perspective

First-principles calculation of lattice thermal conductivity in crystalline phase change materials: GeTe, Sb2Te3 , and Ge2
Campi
¹
,
Paulatto
²
,
Fugallo
³

et al. 2017
Phys. Rev. B
104
17
85
0
View full text Add to dashboard Cite

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The Impact of Thermal Boundary Resistance in Phase-Change Memory Devices

Cited by 114 publications

References 28 publications

Crystal growth within a phase change memory cell

Crystal growth within a phase change memory cell

Thermal Boundary Conductance: A Materials Science Perspective

First-principles calculation of lattice thermal conductivity in crystalline phase change materials: GeTe, Sb2Te3 , and Ge2Campi1, Paulatto2, Fugallo3 et al. 2017Phys. Rev. B10417850View full textAdd to dashboardCite

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First-principles calculation of lattice thermal conductivity in crystalline phase change materials: GeTe, Sb2Te3 , and Ge2
Campi
¹
,
Paulatto
²
,
Fugallo
³

et al. 2017
Phys. Rev. B
104
17
85
0
View full text Add to dashboard Cite