The Impact of the Different Voltages and Frequencies on Resistivity of the TiO2-based Memristors with 3D Observation in MATLAB

Abstract

Memristor is the fourth fundamental element that was theoretically discovered about 40 years ago by Professor Leon Chua and was introduced alongside three other existing elements (resistor, capacitor and inductor) in the electronic world. Until recently, however, the construction of a physical example of this had not yet taken place. Finally, in 2008, HP introduced a nanometer-sized TiO2 structure with predictable memory behavior and hysteresis. In this paper, after introducing the general characteristics and structure of the memristor, a 3D MATLAB model with nonlinear ion deflection for the titanium dioxide memristor made by HP with current or voltage control capability is presented. By setting the model parameters for the specifications of this memory, some simulations are performed and the results are displayed.

Electronic and optical characteristics of phosphorus-doped two-dimensional hexagonal boron arsenide: the effects of doping concentration and mechanical strain

“…Examination of prior research indicates that the physical features of nanomaterials can change under external conditions, and BAs are no exception to this rule [24][25][26][27][28][29][30]. Doping [24,25,[31][32][33], applying strain [26,27], variations in temperature [28], exposure to radiation [34], defects [35][36][37][38], and subjecting materials to electric [29] and magnetic [30] fields are among the primary factors that significantly influence nanomaterial properties. These factors can be utilized to alter the properties of nanomaterials and achieve novel nanostructures.…”