THE IMPACT OF OSCILLATOR STRENGTH ON SILICON NANOCRYSTALS (SiNCS)

Abstract

A theoretical simulation is used to estimate the impact of oscillator strength on Silicon nanocrystals (SiNCs) using Matlab program. The Photoluminescence intensity oscillator dependence as well as Oscillator strength as a function of energy band gap and photon energy is studied. The results obtained, shows that oscillator strength of SiNCs behavior is in compliance with the quantum confinement effects which in succession determine the optical properties of SiNCs, and also shows that the oscillator strength in Nano-Crystallites varies with the amount of confinement and also with the surrounding environment due to change in dielectric constant. The models used in this work can be applied to other nanocrystals semiconductor materials