The impact of nitrogen co-implantation on boron ultra-shallow junction formation and underlying physical understanding

Yeong, S. H.; Colombeau, B.; Mok, K.R.C.; Bénistant, F.; Liu, C.J.; Wee, Aileen; Dong, Guohui; Chan, Lap; Srinivasan, M.P.

doi:10.1016/j.mseb.2008.09.028

Cited by 12 publications

(18 citation statements)

References 11 publications

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“…It follows from the experimental data that the "tail" in the boron concentration profile after lowtemperature treatment of ion-implanted layer can have a shape of a straight line [19,20,21] as well as a convex form characteristic for the Gaussian distribution [6,23,22,25] if the concentration axis is logarithmic. For example, in Fig.…”

Section: Analytical Solution Of Nonstationary Diffusion Equation For mentioning

confidence: 99%

Different shapes of impurity concentration profiles formed by long-range interstitial migration

Velichko

2016

Int. J. Comp. Mat. Sci. Eng.

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A model of interstitial impurity migration is proposed which explains the redistribution of ion-implanted boron in low-temperature annealing of nonamorphized silicon layers. It is supposed that nonequilibrium boron interstitials are generated either in the course of ion implantation or at the initial stage of thermal treatment and that they migrate inward and to the surface of a semiconductor in the basic stage of annealing. It is shown that the form of the "tail" in the boron profile with the logarithmic concentration axis changes from a straight line if the average lifetime of impurity interstitials is substantially shorter than the annealing duration to that bending upwards for increasing lifetime.The calculated impurity concentration profiles are in excellent agreement with the experimental data describing the redistribution of implanted boron for low-temperature annealing at 750 Celsius degrees for 1 h and at 800 Celsius degrees for 35 min. Simultaneously, the experimental phenomenon of incomplete electrical activation of boron atoms in the "tail" region is naturally explained.

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Section: Analytical Solution Of Nonstationary Diffusion Equation For mentioning

confidence: 99%

Different shapes of impurity concentration profiles formed by long-range interstitial migration

Velichko

2016

Int. J. Comp. Mat. Sci. Eng.

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“…Nitrogen co-implantation (Yeong et al, 2008) in deep-submicron shallow junction MOSFETs is necessarily a remedial measure to compensate for fluorine-induced damage. Co-implantation of F through ultrathin gate oxide layers can lead to contamination of the gate oxide, as discussed earlier under fluorine.…”

Section: Co-implantationmentioning

confidence: 99%

“…Also, formation of nitrogen-vacancy clusters in silicon has been cited as the mechanism for suppression of boron TED. Yeong et al (2008) proposed the formation of nitrogen-vacancy (N-V) clusters and nitrogen-boron (N-B) complexes during SPER stage. On the one hand, N-V trap silicon self-interstitials to reduce boron TED while on the other, N-B complexes render electrically active boron inactive.…”

Section: Co-implantationmentioning

confidence: 99%

Formation of Ultra-Shallow Junctions

Seebauer

Gorai

2011

Comprehensive Semiconductor Science and Technology

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“…Really, an increase in the "tail" extension occurs during subsequent thermal treatments of preamorphized silicon layers that were implanted with boron ions 23,27,31,32 . In the investigations carried out by 15,22,28,33 clearly identified "tails" after boron implantation were not observed. However, such "tails" were formed in the course of the subsequent annealing.…”

Section: Introductionmentioning

confidence: 97%

“…All these phenomena substantially complicate the problem of the formation of very shallow junctions with high electrophysical parameters. For suppressing the TED of ionimplanted boron, a method of boron implantation in a silicon layer preamorphized by heavier germanium ions is widely used 9,[13][14][15][21][22][23][24][25][26][27][28][29][30][31][32][33] . Due to the solid phase epitaxial regrowth (SPER) of the amorphous layer, the region doped with boron is characterized by a perfect crystal structure, containing defects that are invisible by electron microscopy.…”

Section: Introductionmentioning

confidence: 99%

Modeling of the transient interstitial diffusion of implanted atoms during low-temperature annealing of silicon substrates

Velichko

Kavaliova

2012

Physica B: Condensed Matter

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It has been shown that many of the phenomena related to the formation of "tails" in the lowconcentration region of ion-implanted impurity distribution are due to the anomalous diffusion of nonequilibrium impurity interstitials. These phenomena include boron implantation in preamorphized silicon, a "hot" implantation of indium ions, annealing of ion-implanted layers et cetera. In particular, to verify this microscopic mechanism, a simulation of boron redistribution during low-temperature annealing of ion-implanted layers has been carried out under different conditions of transient enhanced diffusion suppression. Due to the good agreement with the experimental data, the values of the average migration length of nonequilibrium impurity interstitials have been obtained. It has been shown that for boron implanted into a silicon layer preamorphized by germanium ions the average migration length of impurity interstitials at the annealing temperature of 800 • C can be reduced from 11 nm to approximately 6 nm due to additional implantation of nitrogen. The further shortening of the average migration length is observed if the processing temperature is reduced to 750 • C. It is also found that for implantation of BF2 ions into silicon crystal, the value of the average migration length of boron interstitials is equal to 7.2 nm for thermal treatment at a temperature of 800 • C.

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The impact of nitrogen co-implantation on boron ultra-shallow junction formation and underlying physical understanding

Cited by 12 publications

References 11 publications

Different shapes of impurity concentration profiles formed by long-range interstitial migration

Different shapes of impurity concentration profiles formed by long-range interstitial migration

Formation of Ultra-Shallow Junctions

Modeling of the transient interstitial diffusion of implanted atoms during low-temperature annealing of silicon substrates

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