The impact of minority carrier lifetime and carrier concentration on the efficiency of CIGS solar cell

Fathil, M. F. M.; Arshad, M. K. Md; Hashim, U.; Ruslinda, A. Rahim; Ayub, R. M.; Azman, A. H.; Nurfaiz, M.; Kamarudin, Maslinda; Aminuddin, M.; Munir, Abdul

doi:10.1109/smelec.2014.6920786

Cited by 11 publications

(5 citation statements)

References 12 publications

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“…Some numerical studies have shown that the carrier concentration in the CIGS layer above 10 18 cm −3 positively impacts solar cell performance by reducing surface recombination. 53,54 Effect of sputtering power.-The sputtering power was varied systematically at gas flow rates and substrate temperatures of 60 °C and 300 °C, respectively. Figure 5 shows the XRD patterns of the samples deposited at sputtering powers of 80 W, 120 W, and 160 W. All the samples exhibited XRD peaks at approximately 26.8°, 44.4°, and 52.4°, corresponding to the (112), (220)/(204), and (312)/(116) Bragg reflections of the tetragonal chalcopyrite-type crystal structure of CIGS (JCPDS Card #35-1102).…”

Section: Resultsmentioning

confidence: 99%

Optimization of Growth Parameters of the RF-Sputtered CuInGaSe₂ Thin Films for Photovoltaic Applications

Desarada,

Chavan,

Chaure

et al. 2023

ECS J. Solid State Sci. Technol.

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CuInGaSe2 (CIGS) thin films were deposited by radio-frequency sputtering using a single quaternary target and the effects of various parameters, such as substrate temperature, sputtering power, and gas flow rate, were studied. The structural, morphological, compositional, and optical properties of the films were investigated by X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy, energy-dispersive X-ray, and UV-Vis-NIR spectroscopy. Samples exhibited the chalcopyrite-type tetragonal structure confirmed by XRD analysis. Raman spectroscopy showed the presence of Cu poor OVC phase in all samples.The growth of the sample at a higher substrate temperature resulted in a higher crystalline nature with a suppressed OVC phase and with an energy bandgap of 1.1eV. The deposition of CIGS at 160 W sputtering power favors growth towards (112) Bragg crystal plane, suppressing the (220)/(204) plane of CIGS, shows change in preferred orientation with a lower sputtering power at 80 and 120 W. The sample grown at 60 standard cubic centimeter per minute gas flow rate exhibited compact grain growth with marginally improved crystallinity.The sample grown at 160W, 300°C, and 60SCCM shows better crystalline and morphological properties, and it can be used as an absorber layer for highly efficient CIGS thin-film solar cells.

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Section: Resultsmentioning

confidence: 99%

Optimization of Growth Parameters of the RF-Sputtered CuInGaSe₂ Thin Films for Photovoltaic Applications

Desarada,

Chavan,

Chaure

et al. 2023

ECS J. Solid State Sci. Technol.

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Section: Methodsmentioning

confidence: 99%

“…All simulations were executed under a constant light intensity of 0.1 W/cm 2 (AM) 1.5 at 300 K temperature. For all PV simulations, the bulk recombination time was set from 1 to 100 μs and the doping concentration in the solar cell was set in the range of 1 × 10 15 to 1 × 10 20 cm −3 as reported in previous research articles [44][45][46]. The layers in this solar cell were organized according to the energy bandgap, in which the layer with a lower bandgap was placed on the bottom, while the layer with a higher bandgap was placed on the top surface [36].…”

Section: Pc1d Modeling Toolmentioning

confidence: 99%

Numerical Investigation of Graphene as a Back Surface Field Layer on the Performance of Cadmium Telluride Solar Cell

KC¹,

Shah

Akhtar

et al. 2021

Molecules

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This paper numerically explores the possibility of ultrathin layering and high efficiency of graphene as a back surface field (BSF) based on a CdTe solar cell by Personal computer one-dimensional (PC1D) simulation. CdTe solar cells have been characterized and studied by varying the carrier lifetime, doping concentration, thickness, and bandgap of the graphene layer. With simulation results, the highest short-circuit current (Isc = 2.09 A), power conversion efficiency (h = 15%), and quantum efficiency (QE ~ 85%) were achieved at a carrier lifetime of 1 × 103 ms and a doping concentration of 1 × 1017 cm−3 of graphene as a BSF layer-based CdTe solar cell. The thickness of the graphene BSF layer (1 mm) was proven the ultrathin, optimal, and obtainable for the fabrication of high-performance CdTe solar cells, confirming the suitability of graphene material as a BSF. This simulation confirmed that a CdTe solar cell with the proposed graphene as the BSF layer might be highly efficient with optimized parameters for fabrication.

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“…Although Malaysia is still in research progress while the other countries have started manufacturing the CIGS thin-film solar cells, it can be an important step towards achieving the manufacturing state. Most of the research done by Malaysian research groups and universities on CIGS thin-film solar cells is studies of cell performance via simulation [127][128][129][130][131][132][133][134]. Although these research activities are only on simulation-based studies, but they are all based on valid models and valid experimental data, their results led to important achievements that can be used in fabrication of high performance CIGS solar cells.…”

Section: Perspective Of Cigs Thin-film Solar Cellsmentioning

confidence: 99%

Comparison between thin‐film solar cells and copper–indium–gallium–diselenide in Southeast Asia

Yunus

Aman

Khoshsirat

2015

IET Renewable Power Generation

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This study gives a selective overview of the technological status and comparison of selected thin-film solar cells. In the first part of this study, the development of thin-film solar cells is assessed, followed by comparison of the design structure among those thin-film solar cells and the current status of thin-film solar cells efficiency. The advantages and disadvantages of thin-film solar cells are also discussed. In the second part of this study, a comprehensive review is done on research upon copper-indium-gallium-diselenide (CIGS) thin-film solar cell in Southeast Asia countries. As compared with other regions of the world, Southeast Asia has not started the large manufacturing of CIGS yet, however, the research on it has been started.

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The impact of minority carrier lifetime and carrier concentration on the efficiency of CIGS solar cell

Cited by 11 publications

References 12 publications

Optimization of Growth Parameters of the RF-Sputtered CuInGaSe₂ Thin Films for Photovoltaic Applications

Optimization of Growth Parameters of the RF-Sputtered CuInGaSe₂ Thin Films for Photovoltaic Applications

Numerical Investigation of Graphene as a Back Surface Field Layer on the Performance of Cadmium Telluride Solar Cell

Comparison between thin‐film solar cells and copper–indium–gallium–diselenide in Southeast Asia

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The impact of minority carrier lifetime and carrier concentration on the efficiency of CIGS solar cell

Cited by 11 publications

References 12 publications

Optimization of Growth Parameters of the RF-Sputtered CuInGaSe2 Thin Films for Photovoltaic Applications

Optimization of Growth Parameters of the RF-Sputtered CuInGaSe2 Thin Films for Photovoltaic Applications

Numerical Investigation of Graphene as a Back Surface Field Layer on the Performance of Cadmium Telluride Solar Cell

Comparison between thin‐film solar cells and copper–indium–gallium–diselenide in Southeast Asia

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Product

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Optimization of Growth Parameters of the RF-Sputtered CuInGaSe₂ Thin Films for Photovoltaic Applications

Optimization of Growth Parameters of the RF-Sputtered CuInGaSe₂ Thin Films for Photovoltaic Applications