The Impact of Long-Term Memory Effects on the Linearizability of GaN HEMT-Based Power Amplifiers

Application of harmonic includedCPL‐QPHDmodel ofGaNdevice for broadbandPAdesign

“…Currently existing transistor models for GaN include the physics-based model, the equivalent circuit model and the behavioral model. [12][13][14][15][16][17][18][19][20][21][22][23][24][25][26][27] Both of the first two models provide better results than the behavioral model when the devices are pushed to operating extremes, and are therefore widely used as the best models for existing devices in PA design. However, both the physics-based model and the equivalent circuit model are often difficult to adapt to current rapidly evolving semiconductor technologies, such as GaN, 28 due to the difficulty of their development.…”

“…Currently existing transistor models for GaN include the physics‐based model, the equivalent circuit model and the behavioral model 12–27 . Both of the first two models provide better results than the behavioral model when the devices are pushed to operating extremes, and are therefore widely used as the best models for existing devices in PA design.…”

Drain bias dependence of Y 22 and Y 21 signals at low frequency for on-state conditions in AlGaN/GaN high electron mobility transistors

“…Future advanced systems demand higher performance, and it is necessary to improve the performance of AlGaN/GaN HEMTs. [1][2][3][6][7][8][9][10] One of the limiting factors is traps located around the semiconductor surface and in the bulk. It is an important to clarify the trap behaviors and properties in order to design devices and circuits for performance improvement.…”

On the Extraction of Accurate Non-Quasi-Static Transistor Models for $E$-Band Amplifier Design: Learning From the Past

“…The factors that impact on model accuracy at millimeter waves mainly arise from two sources: the first one is related to the availability of measurements to be used for accurate parameter extraction; the second one is related to the adopted model formulation, that under very different operations must guarantee adequate overall accuracy and computational efficiency [6], [7], [8], [9], [10], [11]. This aspect is particularly critical when the technology process is pushed into its limits as happens in the design of broadband highly linear Eband PAs, which are the most critical components in 5G backhauling, where high-order modulations [1024 quadrature amplitude modulation (QAM)] over large bandwidths (2 GHz) are required [1], [2], [3], [4], [5].…”

“…On the drain side, the conduction current i cond can be described as purely algebraic and related to the free carriers that instantaneously pass through the channel. It also includes the contributions of low-frequency (LF) dispersion phenomena [7], [8], [9], [10], [11]. On the gate side, the Schottky junction contribution to the conduction current can be simply accounted for by means of the standard implementation, which requires two diodes, gate-drain and gate-source, respectively, The QS nonlinear model extraction steps are summarized in the first three rows of Table I, where each part of the model is associated with the adopted formulation and with the measurements used during the parameter extraction.…”