The impact of inverse narrow width effect on sub-threshold device sizing

Zhou, Jun; Jayapal, Senthil; Stuyt, Jan; Huisken, Jos; Groot, Harmke de

doi:10.1109/aspdac.2011.5722196

Cited by 8 publications

(3 citation statements)

References 8 publications

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“…On the other hand, MP5 is enabled to bypass MN5 to achieve faster level shifting when operating in the super-threshold region. In addition, the proposed design utilizes the inverse narrow width effect (INWE) [22] to improve the switching speed and energy efficiency by employing minimum-width fingers to construct the pull-down transistors MN1-MN4 and MN6.…”

Section: B Near-threshold Level Shiftermentioning

confidence: 99%

A 457 nW Near-Threshold Cognitive Multi-Functional ECG Processor for Long-Term Cardiac Monitoring

Liu

Zhou

Yang

et al. 2014

IEEE J. Solid-State Circuits

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A low-power multi-functional Electrocardiogram (ECG) signal processor is presented in this paper. To enable long-term monitoring, several architecture-level power saving techniques are proposed, including global cognitive clocking, pseudo-downsampling wavelet transform, adaptive storing, and denoising-based run-length compression. An ultra-low-voltage ADC is designed for low-power signal digitization with adaptive clocking. Through these architecture-level techniques, the total power consumption can be significantly reduced by 63% as compared to the conventional design. Several circuit-level design techniques are also developed, including ultra-low-voltage operation and near-threshold level shifting, to further reduce the power consumption by 33%. In addition, a low-complexity cardiac analysis scheme is proposed to realize comprehensive on-chip cardiac analysis. Implemented in 0.18 μm CMOS process, the proposed cognitive ECG processor consumes only 457 nW at 0.5 V for real-time ECG recording and diagnosis.

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Section: B Near-threshold Level Shiftermentioning

confidence: 99%

A 457 nW Near-Threshold Cognitive Multi-Functional ECG Processor for Long-Term Cardiac Monitoring

Liu

Zhou

Yang

et al. 2014

IEEE J. Solid-State Circuits

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“…However, the dimensions of the MOSFETs used in ULSI designs have been continuously reduced in order to achieve higher device/circuit density. Moreover, it is well known that the threshold voltage th of a small device will be different from that of a long or wide device due to a combination of the short-channel effect (SCE) [7][8][9], the narrow-width effect (NWE) [10,11], the reverse short-channel effect (RSCE) [12,13], and the reverse narrow-width effect (RNWE) [14,15]. Meanwhile, the equations of a MOSFET in HSpice are evolved from Level 1 (Shichman-Hodges model) to BSIM3 Level 49 [16][17][18].…”

Section: Introductionmentioning

confidence: 99%

TheI-VCharacteristic Prediction of BCD LV pMOSFET Devices Based on an ANFIS-Based Methodology

Chen

2015

Advances in Fuzzy Systems

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Comprehensive and predictive modeling of submicron devices using the traditional TCAD EDA tools of device simulation has become increasingly perplexing due to a lack of reliable models and difficulties in calibrating available device models. This paper proposes a new technique to model BCD submicron pMOSFET devices and to predict device behaviors under different bias conditions and different geometry dimensions by using the adaptive neurofuzzy inference system (ANFIS), which combines fuzzy theory and adaptive neuronetworking. Here, the power of using ANFIS to realize theI-Vbehaviors is demonstrated in these p-channel MOS transistors. After a systematic evaluation, it can be found that the predicting results ofI-Vbehaviors of complicated submicron pMOSFETs by ANFIS are compared with the actual diagnostic experiment data, and a good agreement has been obtained. Furthermore, the error percentage was no greater than 2.5%. As such, the demonstrated benefits of this new proposed technique include precise prediction and easier implementation.

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“…With the MOSFET scaling going on, the transistor size becomes smaller and smaller while the requirement on Ion/Ioff performance is increasingly high. Though the transistor performance is more relied on channel length and gate dielectric thickness, there are also many researches focused on the channel width impact [1][2][3]. As the technology developed into 28nm and beyond, the performance requirement is even higher for narrow device.…”

Section: Introductionmentioning

confidence: 99%

A Study on the AA/STI Corner Shape Impact on Narrow Width MOSFET Idsat/Ioff Performance for 28nm Technology Node

Shi

Kim

et al. 2013

ECS Trans.

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In this work, shallow trench isolation (STI) divot depth and active area (AA) cornerrounding effects on narrow width MOSFET performance were investigated through3-dimensional (3D) TCAD simulation. More poly-silicon wrap down on thetransistor channel by deeper divot enlarges the effective channel width andimproves the gate electrostatic control over the channel. However, it is found thatthe Idsat/Ioff improvement from deep divot is only half of the effective widthincrement. By comparing the trends of extrapolated Vt at maximum Gm (Vtgm)and constant current defined Vt at sub-threshold regime (Vtsat), it is explained thatearly turn-on of the corner transistor is the main reason of the performancedescrepancy. It is demonstrated that large corner rounding can reduce the effect andhence improve Idsat/Ioff. Moreover, conformal source/drain (s/d) extension dopingshould be obtained to remove the underlap at AA side-wall.

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The impact of inverse narrow width effect on sub-threshold device sizing

Cited by 8 publications

References 8 publications

A 457 nW Near-Threshold Cognitive Multi-Functional ECG Processor for Long-Term Cardiac Monitoring

A 457 nW Near-Threshold Cognitive Multi-Functional ECG Processor for Long-Term Cardiac Monitoring

TheI-VCharacteristic Prediction of BCD LV pMOSFET Devices Based on an ANFIS-Based Methodology

A Study on the AA/STI Corner Shape Impact on Narrow Width MOSFET Idsat/Ioff Performance for 28nm Technology Node

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