The impact of channel engineering on the performance and reliability of LDMOS transistors

Mohapatra, Nihar R.; Ehwald, K.‐E.; Barth, R.; Rücker, H.; Bolze, D.; Schley, P.; Schmidt, D.; Wulf, H.-E.

doi:10.1109/essder.2005.1546689

Cited by 12 publications

(3 citation statements)

References 7 publications

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“…This concept is similar to that of MOSFETs with a dual work-function gate 21) or a laterally modulation-doped channel. [22][23] In this paper, we further describe the fabrication processes of trigate poly-Si TFTs and explain their high-frequency behavior in detail by extracting the parasitic resistances and capacitances. First the device performances of trigate poly-Si TFTs with different source/drain (S/D) extension dimensions are presented to find out an optimal extension design guideline.…”

Section: Introductionmentioning

confidence: 99%

DC and high-frequency characteristics of trigate polycrystalline-silicon thin-film transistors with different layout geometries

Chen

Shiao

et al. 2019

Jpn. J. Appl. Phys.

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In this paper, we present the dc and high-frequency characteristics of trigate polycrystalline-silicon (poly-Si) thin-film transistors (TFTs) for RF applications. Trigate TFTs were fabricated using a 3D-IC process and designed with a multi-finger gate and multi-channel configuration. To obtain an optimal device design guideline, different source/drain (S/D) extension dimensions and channel layouts are investigated. We find that devices with a shorter or wider extension have higher cutoff frequencies (fT) and maximum oscillation frequencies (fmax) owing to their lower S/D resistances. In addition, the high-frequency performance can be further improved by adopting the tapered channel structure, where the channel width increases gradually from the source to the drain. For the optimal device designs, the values of fT and fmax are around 25 GHz and 30 GHz, respectively. The high fT and fmax as well as excellent gate controllability in our devices indicate the trigate poly-Si TFT could be a suitable candidate for low-cost RFIC applications.

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Section: Introductionmentioning

confidence: 99%

DC and high-frequency characteristics of trigate polycrystalline-silicon thin-film transistors with different layout geometries

Chen

Shiao

et al. 2019

Jpn. J. Appl. Phys.

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“…For RF power circuit design, it is important to evaluate the hot-carrier stress effects on the high-frequency characteristics of power transistors to predict stress-induced circuit performance drifts. Although the hot-carrier reliability of LDMOS transistors has been investigated in many studies, there are only a few reports that address the hot-carrier stress effects on RF behaviors, [8][9][10] particularly on the degradation of S-parameters and the RF figures of merit, such as cutoff frequency ( f T ) and maximum oscillation frequency ( f max ). Previously, hot-carrier-induced f T or S-parameter degradations were shown only to verify the reliability improvement of a new device structure 8,9) or compare the measurement results of different aging test methods.…”

Section: Introductionmentioning

confidence: 99%

“…Although the hot-carrier reliability of LDMOS transistors has been investigated in many studies, there are only a few reports that address the hot-carrier stress effects on RF behaviors, [8][9][10] particularly on the degradation of S-parameters and the RF figures of merit, such as cutoff frequency ( f T ) and maximum oscillation frequency ( f max ). Previously, hot-carrier-induced f T or S-parameter degradations were shown only to verify the reliability improvement of a new device structure 8,9) or compare the measurement results of different aging test methods. 10) However, the mechanisms of high-frequency parameter degradations were not discussed in detail.…”

Section: Introductionmentioning

confidence: 99%

Investigation of Hot-Carrier Stress Effect on High-Frequency Performance of Laterally Diffused Metal–Oxide–Semiconductor Transistors

Chen

Mou

Kuo

et al. 2012

Jpn. J. Appl. Phys.

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The hot-carrier stress effects on the high-frequency performance characteristics of laterally diffused metal–oxide–semiconductor (LDMOS) transistors were investigated. A constant bias channel hot-carrier stress was applied at room temperature. After applying 3 h of hot-carrier stress, the on-resistance and saturation drain current degradations are 18 and 9%, respectively. However, the degradations of the cutoff frequency and maximum oscillation frequency were less than 2% when the devices were biased before the onset of quasi-saturation. In addition, we found that the degradations of high-frequency parameters are not related to the change in transconductance but to the changes in gate capacitances. Finally, S-parameter variations under hot-carrier stress were also examined in this study. The observations of S-parameter variations are important for RF power amplifier design.

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Mobile Phone Transmitters for Wireless Standards: Systems, Architectures and Technologies

Leyssenne

Kerhervé

Deval

2010

Analog Circuits and Signal Processing

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The impact of channel engineering on the performance and reliability of LDMOS transistors

Cited by 12 publications

References 7 publications

DC and high-frequency characteristics of trigate polycrystalline-silicon thin-film transistors with different layout geometries

DC and high-frequency characteristics of trigate polycrystalline-silicon thin-film transistors with different layout geometries

Investigation of Hot-Carrier Stress Effect on High-Frequency Performance of Laterally Diffused Metal–Oxide–Semiconductor Transistors

Mobile Phone Transmitters for Wireless Standards: Systems, Architectures and Technologies

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