The impact of changed barrier layer parameters upon tunnelling in GaN/AlGaN/GaN Schottky structures

Racko, J.; Mikolášek, Miroslav; Granzner, Ralf; Mustafa, N. Al; Schwierz, Frank; Breza, Juraj

doi:10.1109/asdam.2012.6418531

The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems 2012

DOI: 10.1109/asdam.2012.6418531

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The impact of changed barrier layer parameters upon tunnelling in GaN/AlGaN/GaN Schottky structures

J. Racko

Miroslav Mikolášek

Ralf Granzner

et al.

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The impact of changed barrier layer parameters upon tunnelling in GaN/AlGaN/GaN Schottky structures

Cited by 1 publication

References 5 publications

Capacitance properties and simulation of the AlGaN/GaN Schottky heterostructure

Capacitance properties and simulation of the AlGaN/GaN Schottky heterostructure

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