The impact of atmospheric species on the degradation of CIGS solar cells

Theelen, Mirjam; Foster, Christopher; Steijvers, Henk; Barreau, Nicolas; Vroon, Zeger; Zeman, Miro

doi:10.1016/j.solmat.2015.05.019

Cited by 23 publications

(18 citation statements)

References 13 publications

(21 reference statements)

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“…When assessing the quality of a photovoltaic absorber material, one should, apart from the photoabsorption and carrier transport properties, which affect the short‐circuit current and the fill factor, also consider other properties, such as the difference between the value of the band gap and the attainable open circuit voltage in a device: for short, the voltage deficit. Voltage deficits that have been reported for state‐of‐the art devices show that devices with a MAPbI 3‐x Cl x perovskite absorber layer (with a voltage deficit, ΔV ~ 0.4 V ) outperform the other studied materials (ΔV ~ 0.4–0.6 V for Cu(In,Ga)Se 2 , ΔV ~ 0.6 V for μc‐Si:H , ΔV ~ 0.7 V for MAPbBr 3 and ΔV ~ 0.8–0.9 V for a‐Si(Ge):H ).…”

Section: Resultsmentioning

confidence: 87%

“…This complicates a direct comparison of the measured value of 288 nm for the present Cu(In,Ga)Se 2 sample with earlier results. Here, we contribute by consistently comparing the performance of state‐of‐the‐art Cu(In,Ga)Se 2 with other photovoltaic absorber materials.…”

Section: Resultsmentioning

confidence: 99%

“…Subsequently, a ~2‐μm Cu(In,Ga)Se 2 film was deposited by a co‐evaporation bithermal (380–580°C) three‐stage process , resulting in a film with an average Ga/(Ga + In) ratio of ~0.3, a Cu/(Ga + In) ratio of ~0.9 and a band gap of 1.1 eV. Materials that were made this way have been successfully incorporated into solar cells, achieving >16% conversion efficiencies . Growing the films on SLG/Mo substrates ensures a standard sodium diffusion leading to device‐grade material but hinders a successful SSPG measurement because of the highly conductive molybdenum layer.…”

Section: Methodsmentioning

confidence: 99%

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Benchmarking photoactive thin‐film materials using a laser‐induced steady‐state photocarrier grating

Veldhuizen

Adhyaksa

Theelen

et al. 2017

Progress in Photovoltaics

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In this study, we assess the charge carrier diffusive transport quality of traditional and emerging thin-film photoactive absorber materials used for photovoltaic applications. We use a steady-state photocarrier grating technique, which has so far been predominantly used for amorphous silicon-based materials, to obtain ambipolar diffusion lengths as well as minority and majority carrier mobility-lifetime products. The measurements are performed at volume-averaged generation rates of G = 10 20 -10 21 cm À3 s À1 and low electric field strengths of E = 20-200 V cm À1 . The absorbing capability of the materials is analysed by calculating an effective optical absorption depth, and we compare its value with the obtained electronic ambipolar diffusion length. The effective absorption depths are independent of the band-gap values so that our assessment is also relevant for multijunction solar cells. We observe that for silicon-based thin-film materials, the ambipolar diffusion length (with a value lower than 150 nm) is more than twice as short as their effective absorption depth, while for copper indium gallium selenide chalcopyrite and halide perovskite materials, the diffusion length (with a value up to 367 nm) is similar or larger than the effective absorption depth. The presented method can be used as a rapid assessment of the optoelectronic quality of photoactive thin-film materials.

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Section: Resultsmentioning

confidence: 87%

Section: Resultsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

See 1 more Smart Citation

Benchmarking photoactive thin‐film materials using a laser‐induced steady‐state photocarrier grating

Veldhuizen

Adhyaksa

Theelen

et al. 2017

Progress in Photovoltaics

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“…Theeleen et al demonstrated that, over water dipping, the chemical repartition of element drastically evolves, leading to strong modifications of electrical properties of CIGS solar cells. 2 They also studied the aging of different layers (Al: ZnO, Mo) necessary to the device fabrication during water immersion. 3,4 However, to our knowledge, the chemical evolutions induced by water on CIGS surface were not systematically explored.…”

Section: Introductionmentioning

confidence: 99%

“…Very few studies report on the properties modifications of CIGS solar devices following pure water exposure. Theeleen et al demonstrated that, over water dipping, the chemical repartition of element drastically evolves, leading to strong modifications of electrical properties of CIGS solar cells 2 . They also studied the aging of different layers (Al:ZnO, Mo) necessary to the device fabrication during water immersion 3,4 .…”

Section: Introductionmentioning

confidence: 99%

Evolution of Cu(In,Ga)Se₂ surfaces under water immersion monitored by X‐ray photoelectron spectroscopy

Béchu

Bouttemy

Vigneron

et al. 2020

Surface & Interface Analysis

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Funding information Agence Nationale de la Recherche: Programme d'Investissement d'Avenir-ANR-IEED Cu(In,Ga)Se 2 absorbers were immerged in deionized water for different times, and specific chemical evolutions were monitored thanks to X-ray photoemission spectroscopy. Cu(In,Ga)Se 2 related dissolution products were studied in water through induced coupled plasma optical emission spectroscopy. From those analyses, specific surface network disorganization was observed, with Cu migration towards the surface, leading to different kinetics of oxidation and dissolution for each element that could be quantified.

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Unraveling the cause of degradation in Cu(In,Ga)Se₂ photovoltaics under potential induced degradation

et al. 2021

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Copper indium gallium diselenide (CIGS) based technology is actively competing in the global photovoltaic market with high conversion efficiency. Commercial CIGS modules are anticipated to perform on rated output in the field condition for 20 years. Potential induced degradation (PID) is considered as one of the critical concerns among all the current reliability assessment issues. PID accelerated tests have been performed on pre-commercial CIGS modules to investigate reduction in electrical performance. We report the severe reduction in electrical performance after PID is correlated to the microstructural and chemical properties of the constituent materials. Under extreme PID stress, the cell surface reveals various defects including crater formation. The aim of this article is to explore the consequences of PID induced craters on the efficiency of CIGS solar cells by investigating material degradation kinetics. In this perspective, we present the root cause of PID in CIGS thin-film modules in relation to microstructural defects by detailed investigation using J-V analysis, field emission scanning electron microscope (FESEM), Raman spectroscopy, X-Ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and photoluminescence spectroscopy (PL). This analysis can provide more effective and sustainable research strategies to cultivate more efficient and reliable CIGS technologies in the long run.

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The impact of atmospheric species on the degradation of CIGS solar cells

Cited by 23 publications

References 13 publications

Benchmarking photoactive thin‐film materials using a laser‐induced steady‐state photocarrier grating

Benchmarking photoactive thin‐film materials using a laser‐induced steady‐state photocarrier grating

Evolution of Cu(In,Ga)Se₂ surfaces under water immersion monitored by X‐ray photoelectron spectroscopy

Unraveling the cause of degradation in Cu(In,Ga)Se₂ photovoltaics under potential induced degradation

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The impact of atmospheric species on the degradation of CIGS solar cells

Cited by 23 publications

References 13 publications

Benchmarking photoactive thin‐film materials using a laser‐induced steady‐state photocarrier grating

Benchmarking photoactive thin‐film materials using a laser‐induced steady‐state photocarrier grating

Evolution of Cu(In,Ga)Se2 surfaces under water immersion monitored by X‐ray photoelectron spectroscopy

Unraveling the cause of degradation in Cu(In,Ga)Se2 photovoltaics under potential induced degradation

Contact Info

Product

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Evolution of Cu(In,Ga)Se₂ surfaces under water immersion monitored by X‐ray photoelectron spectroscopy

Unraveling the cause of degradation in Cu(In,Ga)Se₂ photovoltaics under potential induced degradation