The hydrostatic pressure effects on intersubband optical absorption of n -type δ-doped quantum well in GaAs

Oubram, O.; Navarro, O.; Gaggero‐Sager, L. M.; Martı́nez-Orozco, J.C.; Rodrı́guez-Vargas, I.

doi:10.1016/j.solidstatesciences.2012.01.020

Cited by 30 publications

(9 citation statements)

References 48 publications

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“…Therefore, the linear and nonlinear optical absorptions in quantum wells, wires and dots under different external perturbations such as hydrostatic pressure, electric field, magnetic field and doping concentration in these structures are investigated [29][30][31][32][33][34][35][36][37][38][39][40][41][42]. Oubram et al [43] investigated the hydrostatic pressure on intersubband transitions of n-type doped GaAs quantum well. Karabulut et al [44] studied the effect of hydrostatic pressure on the second harmonic generation susceptibility (SHG) of an asymmetric rectangular quantum well.…”

Section: Introductionmentioning

confidence: 99%

Effect of Si δ -doped layer position on optical absorption in GaAs quantum well under hydrostatic pressure

Dakhlaoui

Almansour

Algrafy

2015

Superlattices and Microstructures

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Section: Introductionmentioning

confidence: 99%

Effect of Si δ -doped layer position on optical absorption in GaAs quantum well under hydrostatic pressure

Dakhlaoui

Almansour

Algrafy

2015

Superlattices and Microstructures

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“…Recently, the same group of authors reported the calculation of the linear and nonlinear optical absorption and relative refractive index change coefficients in a single n‐type

δ

‐doped GaAs QW (). Likewise, Oubram and collaborators investigated the effect of the hydrostatic pressure on the intersubband optical absorption of the same kind of structures (). The calculation of intersubband‐related linear and nonlinear optical coefficients in

δ

‐FET systems was put forward by some of us in a model GaAs ‐based structure design that includes a single DDQW plus a Schottky barrier potential .…”

Section: Introductionmentioning

confidence: 99%

Nonlinear optical properties in an asymmetric double δ-doped quantum well with a Schottky barrier: Electric field effects

Rojas-Briseño

Martı́nez-Orozco

Rodrı́guez-Vargas

et al. 2013

Phys. Status Solidi B

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p s s basic solid state physics b status solidi www.pss-b.com physica Nonlinear optical properties in an asymmetric double δ-doped quantum well with a Schottky barrier: Electric field effectsThe effect of an externally applied static electric field on the nonlinear optical response in a GaAs asymmetric double δdoped quantum well is studied. The proposed structure bears a configuration including a Schottky barrier that can be tuned via a contact voltage. Using the effective mass approximation and a many-body Hartree-type Thomas-Fermi approximation for the confining conduction band profile, it can be shown that such a system could be of interest for a practical realization of a nonlinear optical responder. It is found that the influence of the static electric field can be used to suitably tuning the occurrence and position of the resonant optical signals in the far-infrared regime.1 Introduction Planar-doping or "δ-doping" is one of the processes of seeding a large amount of charge carriers in a semiconducting host material, looking for the generation of high conductivity strongly confined quasi-two-dimensional channels [1][2][3][4][5]. This can lead to an improvement of the electronic operation of devices that incorporate this particular kind of doping, as it is the case of field effect transistors. The first proposal of a δ-doped device was put forward by Schubert and Ploog [6] and consisted of a single δ-doped quantum well (DDQW) relatively close to a metal-semiconductor contact in what is called a MESFET structure. This design is now referred as a δ-doped field effect transistor (δ-doped-FET, or simply δ-FET).The δ-doped impurity-seeding profile gives rise to a kind of V -shaped potential quantum well (QW) in the conduction or valence band profiles, depending on the kind of doping (donor or acceptor atoms). The inclusion of a Schottky barrier in the design of a quantum confined structure containing a DDQW causes that the charge carriers that form the confined quasi-two-dimensional gas become affected by an electric field of intensity V c /d. Here, V c is the Schottky barrier height and d is the distance between the DDQW and the associated metal-semiconductor contact. Self-consistent as well as analytical models of a δ-FET have been put forward by 8]. In these works, the analytical description of the confining potential profile follows the lines of the so-called Thomas-Fermi approximation which was proposed by Ioriatti for the case of δ-doped systems [9].The nonlinear optical properties of quantum confined semiconducting systems have been the subject of study of many authors (for some of the earlier works, see Refs. [10,11]). In particular, double -and multiple -QWs are low-dimensional structures in which it is possible to obtain rather large values of the intersubband-related optical dipole moment [12]. This reflects in a significant enhancement of the nonlinear optical responses (see, for instance, the references [13][14][15][16][17][18][19][20][21][22][23][24]). The investigation on the linear and nonlinear o...

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“…Recently, the behavior of optical properties of small structures with the combined effects of applied electric and magnetic fields and hydrostatic pressure in GaAs/GaAlAs QW have been largely studied by many researchers [16][17][18][19][20]. On one hand before, we can mention the first experimental report about the observation of a large-amplitude transition in the conductive band of a GaAs quantum well by West and Eglash [21].…”

Section: Introductionmentioning

confidence: 99%

GaAs quantum well in the non-parabolic case: the effect of hydrostatic pressure on the intersubband absorption coefficient and the refractive index

Chrafih¹,

Moudou²,

Rahmani³

et al. 2019

Eur. Phys. J. Appl. Phys.

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We investigated the effect of the hydrostatic pressure on the optoelectronic properties of a quantum well (QW) based on δ-doped GaAs sandwiched by Ga1-xAlxAs. We study the case of a non-parabolic conduction band where the aluminum content is set at 30%. We perform our calculations in the context of the approximation of the envelope function formalism using the finite difference method. Results show that the transition energies decrease with the increase of the hydrostatic pressure, which causes remarkable modifications on the optical properties of the QW nanostructure. The non-parabolicity effect is more important for small QW (Lw ≤ 5nm) and less marked in narrow and large QW. In addition, we study the absorption coefficient for 8 nm/4 nm/8 nm geometry. On the one hand, the pressure increase creates a displacement of the optical absorption coefficient towards low energies and a decrease of the absorption peak value. On the other hand, the refractive index moves towards higher energies. We show that in the presence of a hydrostatic pressure and following its effect on intersubband transitions, these optical properties also depend on the dopant concentration rate and the quantum well width. Our study finds interests for the nano-fabrication of quantum wells and in particular for those used in optical and electronic applications.

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The hydrostatic pressure effects on intersubband optical absorption of n -type δ-doped quantum well in GaAs

Cited by 30 publications

References 48 publications

Effect of Si δ -doped layer position on optical absorption in GaAs quantum well under hydrostatic pressure

Effect of Si δ -doped layer position on optical absorption in GaAs quantum well under hydrostatic pressure

Nonlinear optical properties in an asymmetric double δ-doped quantum well with a Schottky barrier: Electric field effects

GaAs quantum well in the non-parabolic case: the effect of hydrostatic pressure on the intersubband absorption coefficient and the refractive index

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