The hydrogen content of a-Ge:H and a-Si:H as determined by ir spectroscopy, gas evolution and nuclear reaction techniques

Fang, Chaojun; Gruntz, K. J.; Ley, L.; Cardona, M.; Demond, F.J.; Müller, Gerhard; Kalbitzer, S.

doi:10.1016/0022-3093(80)90603-1

Cited by 346 publications

(76 citation statements)

References 12 publications

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“…[4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19] Evaluation of the hydrogen content ͑or other impurities͒ in deposited or grown amorphous layers are routinely determined from the intensity and position of their respective infrared resonances. [20][21][22] Spectral variations are almost always assumed to be due to variations in physical properties of the layers and less frequently in the thicknesses of the layers, angle, and polarization of incident light and multilayer arrangement. The results are usually coherent, especially when samples with similar thicknesses and in the same experimental conditions are compared.…”

Section: Introductionmentioning

confidence: 99%

Analysis of geometrical effects on the behavior of transverse and longitudinal modes of amorphous silicon compounds

Moreno

Garrido

Samitier

et al. 1997

Journal of Applied Physics

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The peak frequency, width, and shape of the transverse-optical ͑TO͒ and longitudinal-optical ͑LO͒ infrared absorption modes of silicon oxides ͑SiO 2 , SiO x ͒, silicon nitrides ͑Si 3 N 4 , SiN x ͒, silicon oxynitrides ͑SiO x N y ͒, and other silicon compounds have often been connected with stress, stoichiometry, defects, structural order, and other properties of the layers. However, certain geometrical effects strongly influence the spectral response of the material independent of its physical or structural properties. The influence of layer thickness, multilayer configuration, substrate effects, angles, and polarization on the behavior of TO and LO bands are presented and discussed. Some corrections are suggested to reduce experimental error and for the reliable measurement of stress, composition, disorder, and structure.

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Section: Introductionmentioning

confidence: 99%

Analysis of geometrical effects on the behavior of transverse and longitudinal modes of amorphous silicon compounds

Moreno

Garrido

Samitier

et al. 1997

Journal of Applied Physics

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“…The total bonded hydrogen content, C H , is deduced from the wagging mode by using the following relation [8]: The results of the analysis of the IR absorption spectra obtained for the various layers are summarized in Table1. The important remarks are:…”

Section: Contributedmentioning

confidence: 99%

Structural properties of intrinsic and doped nc‐Si:H films prepared by RFMS: Study as function of deposition time and substrate temperature

Belfedal

Bouizem

Benlakehal

et al. 2010

Phys. Status Solidi (c)

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“…The concentration of hydrogen in the a-Ge:H and a-Si:H films was determined with the aid of the equation [15][16][17][18][19] …”

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confidence: 99%

“…Depending on the partial pressure of hydrogen P H 2 , the specific concentration of water-containing bonds of silicon and germanium takes on the values 0.12, 0.18, 0.26, 0.42, 0.58 and 0.04, 0.06, 0.07, 0.09, and 0.10, respectively, which were calculated by the technique of [8] using Fig. 2a and c. Knowing N Ge-H , we calculate the concentration of hydrogen (N H ) in the a-Si 0.60 Ge 0.40 :H film from the expression [11,15] …”

mentioning

confidence: 99%

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Optical Properties of Amorphous Films of an a-Si1−x Gex:H Solid Solution with Different Concentrations of Hydrogen

Nadzhafov

Isakov

2005

J Appl Spectrosc

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The IR absorption spectra of hydrogenated amorphous films of an a-Si 0.60 Ge 0.40 :H solid solution that were obtained by plasmachemical deposition at different partial pressures of hydrogen P H 2 have been investigated.The oscillator strengths Γ that depend substantially on P H 2 have been determined. It is shown that hydrogen is contained in the films mainly in the GeH and SiH forms. Using integral absorptions I w , the concentrations of hydrogen were determined. The highest value of P H 2 is observed at Γ = 0.51, P = 4.16, N H = 9.7⋅10 21 cm -3 , and C H = 23.7 at.%. It has been established that the oscillator strengths depend on the hydrogen concentration: they decrease on hydrogen effusion and increase with the hydrogen concentration. It is shown that the hydrogen concentration in the films of the a-Si 0.60 Ge 0.40 :H solid solution can be controlled by changing its pressure.

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The hydrogen content of a-Ge:H and a-Si:H as determined by ir spectroscopy, gas evolution and nuclear reaction techniques

Cited by 346 publications

References 12 publications

Analysis of geometrical effects on the behavior of transverse and longitudinal modes of amorphous silicon compounds

Analysis of geometrical effects on the behavior of transverse and longitudinal modes of amorphous silicon compounds

Structural properties of intrinsic and doped nc‐Si:H films prepared by RFMS: Study as function of deposition time and substrate temperature

Optical Properties of Amorphous Films of an a-Si1−x Gex:H Solid Solution with Different Concentrations of Hydrogen

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