The Historical Development of Infrared Photodetection Based on Intraband Transitions

Hao, Qun; Zhao, Xue; Tang, Xin; Chen, Menglu

doi:10.3390/ma16041562

Cited by 5 publications

(5 citation statements)

References 84 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Figure 6a,b depicts the infrared absorption spectra of HgSe/OA and HgSe/CsPbBr x I 3−x , respectively. The presence of an intraband absorption peak in the range of 1000~2500 cm −1 for HgSe/OA quantum dots signified stable doping, while interband absorption occurred at higher energies [31,32]. The characteristic organic peak associated with OA ligands was observed around 3000 cm −1 [33].…”

Section: Resultsmentioning

confidence: 98%

Heterojunctions of Mercury Selenide Quantum Dots and Halide Perovskites with High Lattice Matching and Their Photodetection Properties

Yu,

Shan,

Zhu

et al. 2024

Materials

View full text Add to dashboard Cite

Heterojunction semiconductors have been extensively applied in various optoelectronic devices due to their unique carrier transport characteristics. However, it is still a challenge to construct heterojunctions based on colloidal quantum dots (CQDs) due to stress and lattice mismatch. Herein, HgSe/CsPbBrxI3−x heterojunctions with type I band alignment are acquired that are derived from minor lattice mismatch (~1.5%) via tuning the ratio of Br and I in halide perovskite. Meanwhile, HgSe CQDs with oleylamine ligands can been exchanged with a halide perovskite precursor, acquiring a smooth and compact quantum dot film. The photoconductive detector based on HgSe/CsPbBrxI3−x heterojunction presents a distinct photoelectric response under an incident light of 630 nm. The work provides a promising strategy to construct CQD-based heterojunctions, simultaneously achieving inorganic ligand exchange, which paves the way to obtain high-performance photodetectors based on CQD heterojunction films.

show abstract

Section: Resultsmentioning

confidence: 98%

Heterojunctions of Mercury Selenide Quantum Dots and Halide Perovskites with High Lattice Matching and Their Photodetection Properties

Yu,

Shan,

Zhu

et al. 2024

Materials

View full text Add to dashboard Cite

show abstract

“…6 Intraband transitions that occur between states of the same band may be advantageous because their use widens the choice of bulk semiconductors to start with. 7,8 This is particularly relevant in the midwave (3−5 μm) and long-wave (8−12 μm) infrared, where there are very few bulk semiconductors with small enough band gaps. 9 Intraband CQD photodetectors have started to be explored with various materials, including HgSe, HgS, Ag 2 Se, and PbS.…”

Section: Introductionmentioning

confidence: 99%

“…Over the past decades, most research on these materials has focused on the interband transitions, which occur between the quantum confined states derived from the bulk valence and conduction bands . Intraband transitions that occur between states of the same band may be advantageous because their use widens the choice of bulk semiconductors to start with. , This is particularly relevant in the midwave (3–5 μm) and long-wave (8–12 μm) infrared, where there are very few bulk semiconductors with small enough band gaps …”

Section: Introductionmentioning

confidence: 99%

Intraband Transition of HgTe Nanocrystals for Long-Wave Infrared Detection at 12 μm

2023

View full text Add to dashboard Cite

The synthesis of n-doped HgTe colloidal quantum dots was optimized to produce samples with a 1Se–1Pe intraband transition in the long-wave infrared (8–12 μm). The spin–orbit splitting of 1Pe states places the 1Se–1Pe1/2 transition around 10 μm. The narrow line width of 130 cm–1 at 300 K is limited by the size distribution. This narrowing leads to an absorption coefficient about 5 times stronger than is possible with the HgTe CQD interband transition at similar energies. From 300 to 80 K, the intraband transition blueshifts by 90 cm–1, while the interband transition redshifts by 350 cm–1. These shifts are assigned to the temperature dependence of the band structure. With ∼2 electrons/dot doping at 80 K, a photoconductive film of 80 nm thickness on a quarter wave reflector substrate showed a detectivity (D*) of ∼107 Jones at 500 Hz in the 8–12 μm range.

show abstract

“…Infrared (IR) photodetectors with low-dimensional nanostructures are widely used in applications, such as transmitting information, high-resolution imaging, atmospheric remote sensing, etc. [4][5][6][7][8][9]. Group-IV Ge/Si heterostructures can be monolithically integrated into silicon electronic chips providing a low cost and CMOS compatible photonics platform [10][11][12][13].…”

Section: Introductionmentioning

confidence: 99%

Angle-Selective Photodetection in Ge/Si Quantum Dot Photodiodes Enhanced by Microstructured Hole Arrays

et al. 2023

View full text Add to dashboard Cite

We report on the near-infrared (NIR) photoresponse of a micropatterned Ge/Si quantum dot (QD) pin photodiode at different angles of radiation incidence. The photon-trapping hole array was etched through the n+-type top contact layer to reach the buried QDs. The normal-incidence responsivity was observed to be resonantly increased at wavelengths of 1.4, 1.7, and 1.9 μm by factors of 40, 33, and 30, respectively, compared with the reference detector without holes. As the incident angle θ increases, the resonance peaks are disappeared and at θ>40∘ a new resonance with a 25× enhancement arises at a wavelength of 1.8 μm. Simulation of the near-field intensity, Poynting vector distribution and wave polarization showed that at small θ, the strong electric field is primarily localized under the air holes (1.4 μm, TM mode) or between the holes (1.7 and 1.9 μm, TE modes) inside the region occupied by QDs, resulting in the strong NIR photocurrent. At large θ, the dominant resonance detected at 1.8 μm is the result of coupling between the TE and TM modes and formation of a mixed near-field state.

show abstract

The Historical Development of Infrared Photodetection Based on Intraband Transitions

Cited by 5 publications

References 84 publications

Heterojunctions of Mercury Selenide Quantum Dots and Halide Perovskites with High Lattice Matching and Their Photodetection Properties

Heterojunctions of Mercury Selenide Quantum Dots and Halide Perovskites with High Lattice Matching and Their Photodetection Properties

Intraband Transition of HgTe Nanocrystals for Long-Wave Infrared Detection at 12 μm

Angle-Selective Photodetection in Ge/Si Quantum Dot Photodiodes Enhanced by Microstructured Hole Arrays

Contact Info

Product

Resources

About