2023
DOI: 10.3390/ma16041562
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The Historical Development of Infrared Photodetection Based on Intraband Transitions

Abstract: The infrared technology is entering widespread use as it starts fulfilling a growing number of emerging applications, such as smart buildings and automotive sectors. Majority of infrared photodetectors are based on interband transition, which is the energy gap between the valence band and the conduction band. As a result, infrared materials are mainly limited to semi-metal or ternary alloys with narrow-bandgap bulk semiconductors, whose fabrication is complex and expensive. Different from interband transition,… Show more

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Cited by 5 publications
(5 citation statements)
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“…Figure 6a,b depicts the infrared absorption spectra of HgSe/OA and HgSe/CsPbBr x I 3−x , respectively. The presence of an intraband absorption peak in the range of 1000~2500 cm −1 for HgSe/OA quantum dots signified stable doping, while interband absorption occurred at higher energies [31,32]. The characteristic organic peak associated with OA ligands was observed around 3000 cm −1 [33].…”
Section: Resultsmentioning
confidence: 98%
“…Figure 6a,b depicts the infrared absorption spectra of HgSe/OA and HgSe/CsPbBr x I 3−x , respectively. The presence of an intraband absorption peak in the range of 1000~2500 cm −1 for HgSe/OA quantum dots signified stable doping, while interband absorption occurred at higher energies [31,32]. The characteristic organic peak associated with OA ligands was observed around 3000 cm −1 [33].…”
Section: Resultsmentioning
confidence: 98%
“…6 Intraband transitions that occur between states of the same band may be advantageous because their use widens the choice of bulk semiconductors to start with. 7,8 This is particularly relevant in the midwave (3−5 μm) and long-wave (8−12 μm) infrared, where there are very few bulk semiconductors with small enough band gaps. 9 Intraband CQD photodetectors have started to be explored with various materials, including HgSe, HgS, Ag 2 Se, and PbS.…”
Section: Introductionmentioning
confidence: 99%
“…Over the past decades, most research on these materials has focused on the interband transitions, which occur between the quantum confined states derived from the bulk valence and conduction bands . Intraband transitions that occur between states of the same band may be advantageous because their use widens the choice of bulk semiconductors to start with. , This is particularly relevant in the midwave (3–5 μm) and long-wave (8–12 μm) infrared, where there are very few bulk semiconductors with small enough band gaps …”
Section: Introductionmentioning
confidence: 99%
“…Infrared (IR) photodetectors with low-dimensional nanostructures are widely used in applications, such as transmitting information, high-resolution imaging, atmospheric remote sensing, etc. [4][5][6][7][8][9]. Group-IV Ge/Si heterostructures can be monolithically integrated into silicon electronic chips providing a low cost and CMOS compatible photonics platform [10][11][12][13].…”
Section: Introductionmentioning
confidence: 99%