2020
DOI: 10.1016/j.jallcom.2019.153167
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The high-energy milling process as a synergistic approach to minimize the thermal conductivity of PbTe nanostructures

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Cited by 11 publications
(8 citation statements)
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“…To avoid overheating of the apparatus at long milling times, the mill was stopped for 10 min after every 30 min of milling. 22 The as-milled samples were extracted periodically at various fixed times. After the process, the as-milled samples were washed several times with de-ionized water and dried under an Ar atmosphere for further characterization.…”
Section: Methodsmentioning
confidence: 99%
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“…To avoid overheating of the apparatus at long milling times, the mill was stopped for 10 min after every 30 min of milling. 22 The as-milled samples were extracted periodically at various fixed times. After the process, the as-milled samples were washed several times with de-ionized water and dried under an Ar atmosphere for further characterization.…”
Section: Methodsmentioning
confidence: 99%
“…The HEM process was carried out for up to 5 h to trace the mechanisms of formation of the PbTe QDs under c – P – T vial conditions. To avoid overheating of the apparatus at long milling times, the mill was stopped for 10 min after every 30 min of milling . The as-milled samples were extracted periodically at various fixed times.…”
Section: Experimental Sectionmentioning
confidence: 99%
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“…Point defects in the form of intrinsic lattice defects and extrinsic dopants are considered here to engineer κ vib , and to control electronic carriers, a necessity for high zT in lead chalcogenides . Processing methods like high-energy ball milling , are then used to powder the ingots while controlling the particle size and increasing internal strain by introducing microstructural defects, such as dislocations. The point defects introduced at the start will influence the defects that form during powdering.…”
Section: Introductionmentioning
confidence: 99%
“…[27][28][29][30][31][32][33][34] In addition, CQDs offer a tunable density of grain boundaries that can be exploited to suppress thermal transport, providing an effective approach to reducing the thermal conductivity of thin films. [26,[35][36][37][38][39] These appealing features make CQDs a promising building block for application in efficient thermoelectric generators (TEGs) operating near room temperature (RT). [40][41][42] Semiconducting CQDs have witnessed a rapid improvement in their thermoelectric performance, nearing the performance of conventional bulk thermoelectric systems based on bismuth telluride (Bi 2 Te 3 ).…”
Section: Introductionmentioning
confidence: 99%