“…Three diffraction spots, which had interplanar spacing of 0.267, 0.267, and 0.211 nm, were indexed to the (
10), (01
), and (20
) crystal planes of cubic phase NiSe 2 (JCPDS: 04‐003‐1991), respectively. [
18 ] Figure S3d, Supporting Information exhibited the high‐angle annular dark field scanning transmission electron microscopy (HAADF‐STEM) image of pure NiSe 2 precursor, and the energy dispersive X‐ray (EDX) mapping image in Figure S3e,f, Supporting Information exhibited the homogeneous elements distribution of Ni and Se in the NiSe 2 precursor. After the etching treatment in the second step, partial NiSe 2 was in situ transformed into Ni 0.85 Se, which mainly ascribed to the strong reducibility of NaBH 4 .…”