The heteroepitaxy of InP on substrates of CdS using InI3 as the transport agent

Abstract

Indium phosphide is successfully transported down a temperature gradient by a reaction with indium tri-iodide. In contrast to transport with hydrogen, cadmium sulfide may be used as the substrate. Heteroepitaxial growth of InP on CdS is demonstrated. Preliminary in situ etching of the CdS is possible in this growth technique. The use of polycrystalline thin-film substrates and solar cell device possibilities are mentioned.