The growth of Sea-urchin-like AlN nanostructures by modified CVD and their Field Emission properties

Morphological diversity of AlN nano- and microstructures: synthesis, growth orientations and theoretical modelling

“…These fragments can be classified as primary structures of the dendritic [127], (c) [128]) (d) [130]; B. 3D(1) structures: (a, b) [131], (c) [132] and (d) [133]; C. 3D(2) structures: (a) [135], (b) [136] (c, d, e) [137]. crystallisation process, in which the size of the smallest dendrites is ∼2-3 μm.…”

“…The assembly of individual 6-fold crystals in a single domain produces urchin-like and flower-like structures, as shown in Figure 5(B, ab). Similar urchin-like structures were grown via a modified CVD method that uses AlCl 3 and NH 3 as precursors [132]. Low synthesis temperature (∼750°C), did not interfere the formation needle-shaped urchin-like structures.…”

“…Low synthesis temperature (∼750°C), did not interfere the formation needle-shaped urchin-like structures. As shown in Figure 5(B, c) [132] individual needles (or daggers) with lengths of 500 nm grew from the central nuclei along the c-axis direction. These nanostructures can be classified as 3D(1) and partially 3D(2) structures, as the building element can be 1D nanoneedles or 2D nano-daggers.…”

“…3D(0) structures: (a) [126], (b)[127], (c)[128]) (d)[130]; B. 3D(1) structures: (a, b)[131], (c)[132] and (d)[133]; C. 3D(2) structures: (a)[135], (b)[136] (c, d, e)[137].…”

High-quality AlN films grown on chemical vapor-deposited graphene films

“…Aluminum nitride has a variety of excellent physical properties, such as a high melting point (3273 K), high thermal conductivity (285 W/mK), high direct band gap (6.2 Ev), good dielectric constant (8.5) and high hardness (about ~ 2×103 kgf mm-2) [13,14,15]. Common ways of depositing aluminum nitride films include DC and RF magnetron sputtering [13][14][15][16][17][18], chemical vapor deposition [19,20], and molecular beam epitaxy [21]. However, the CVD and MBE methods can only be used at high temperatures, and this limits the base materials that can be used, and if the resulting grains are too big then this will lead to a rough surface, and so it will not be possible to easily manufacture electrodes on the films.…”