The growth of ErxGa2−xO3films by atomic layer deposition from two different precursor systems

Dezelah, Charles L.; Myllymäki, Pia; Päiväsaari, Jani; Arstila, Kai; Niinistö, Lauri; Winter, Charles H.

doi:10.1039/b616443a

Cited by 16 publications

(9 citation statements)

References 43 publications

(28 reference statements)

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“…First, the bulk phase diagram can be used to ascertain which cycle ratio (to tune the composition) and annealing conditions (to tune mixing and phase) need to be employed. In most cases, ALD of a film with the correct stoichiometry does not directly result in a crystalline phase, and a post-deposition anneal is required (this can also be seen in Tables –). ,,,,− ,,,,− ,,,− ,,,,,,,,,,,,,,− Typical annealing conditions are under nitrogen or oxygen atmosphere or in air, and the temperature required to begin crystallization is generally between 600 and 800 °C, with the required temperature often varying depending on the composition of the film. However, while the phase diagram provides thermodynamic information on the bulk system, it has been shown that it often does not rigorously predict the formation of phases in ALD films. , This phenomenon has been hypothesized to be a result of the layer-by-layer growth character of ALD or of bulk material data not applying to the nanometer thickness scale of ALD films, but further investigation is required to unravel the effects.…”

Section: Intermixing and Phase Formationmentioning

confidence: 99%

Synthesis of Doped, Ternary, and Quaternary Materials by Atomic Layer Deposition: A Review

et al. 2018

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In the past decade, atomic layer deposition (ALD) has become an important thin film deposition technique for applications in nanoelectronics, catalysis, and other areas due to its high conformality on 3-D nanostructured substrates and control of the film thickness at the atomic level. The current applications of ALD primarily involve binary metal oxides, but for new applications there is increasing interest in more complex materials such as doped, ternary, and quaternary materials. This article reviews how these multicomponent materials can be synthesized by ALD, gives an overview of the materials that have been reported in the literature to date, and discusses important challenges. The most commonly employed approach to synthesize these materials is to combine binary ALD cycles in a supercycle, which provides the ability to control the composition of the material by choosing the cycle ratio. Discussion will focus on four main topics: (i) the characteristics, benefits, and drawbacks of the approaches that currently exist for the synthesis of multicomponent materials, with special attention to the supercycle approach; (ii) the trends in precursor choice, process conditions, and characterization methods, as well as underlying motivations for these design decisions; (iii) the distribution of atoms in the deposited material and the formation of specific (crystalline) phases, which is shown to be dependent on the ALD cycle sequence, deposition temperature, and post-deposition anneal conditions; and (iv) the nucleation effects that occur when switching from one binary ALD process to another, with different explanations provided for why the growth characteristics often deviate from what is expected. This paper provides insight into how the deposition conditions (cycle sequence, temperature, etc.) affect the properties of the resultant thin films, which can serve as a guideline for designing new ALD processes. Furthermore, with an extensive discussion on the nucleation effects taking place during the growth of ternary materials, we hope to contribute to a better understanding of the underlying mechanisms of the ALD growth of multicomponent materials.

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Section: Intermixing and Phase Formationmentioning

confidence: 99%

Synthesis of Doped, Ternary, and Quaternary Materials by Atomic Layer Deposition: A Review

et al. 2018

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“…However, to be used in CVD or ALD one of the most important attributes is the availability of a volatile precursor of metal. Ga 2 O 3 thin film formation has been previously studied using Ga(acac) 3 , , ((CH 3 ) 2 GaNH 2 ) 3 , and Ga(N(CH 3 ) 2 ) 6 . , However, all of these precursors have to be heated to achieve an efficient vapor pressure. Trimethylgallium (TMGa) , is an important organometallic precursor for Ga 2 O 3 thin films due to its high vapor pressure at room temperature .…”

Section: Introductionmentioning

confidence: 99%

Infrared Matrix Isolation Study of the Thermal and Photochemical Reactions of Ozone with Trimethylgallium

2015

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The thermal and photochemical reactions of (CH3)3Ga and O3 have been explored using a combination of matrix isolation, infrared spectroscopy, and theoretical calculations. Experimental data using twin jet deposition and theoretical calculations demonstrate the formation of multiple product species after deposition, annealing to 35 K, and UV irradiation of the matrices. The products were identified as (CH3)2GaOCH3, (CH3)2GaCH2OH, (CH3)(CH3O)Ga(OCH3), (CH3)2GaCHO, and (CH3)Ga(OCH3)(CH2OH). Product identifications were confirmed by annealing and irradiation behavior, (18)O substitution experiments, and high level theoretical calculations. Merged jet deposition led to a number of stable late reaction products, including C2H6, CH3OH, and H2CO. A white solid film was also noted on the walls of the merged (flow reactor) region of the deposition system, likely due to the formation of Ga2O3.

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“…The carbon contamination in CaS:EuO could be explained by the reaction between ozone and the β-diketonate precursor (Eu(thd) 3 ), which is known to originate carbonates in the films [14]. Additionally, the ToF-ERDA analysis revealed a lower hydrogen presence in CaS:Eu, which indicates the excellent reactivity between Ca(thd) 2 and Eu(thd) 3 with H 2 S. These efficient surface reactions are responsible to effectively remove lighter species, such as H [36]. In contrast, higher levels of carbon and hydrogen contamination in CaS:EuO sample can be correlated with the lower reactivity of O 3 species with Ca(thd) 2 and Eu(thd) 3 , in comparison to H 2 S. Moreover, the intentional inclusion of oxygen atoms into the europium doped CaS layer may be the major responsible factor for the lower level of crystallinity.…”

Section: Discussionmentioning

confidence: 99%

Tuning of Emission Wavelength of CaS:Eu by Addition of Oxygen Using Atomic Layer Deposition

et al. 2021

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Atomic layer deposition (ALD) technology has unlocked new ways of manipulating the growth of inorganic materials. The fine control at the atomic level allowed by ALD technology creates the perfect conditions for the inclusion of new cationic or anionic elements of the already-known materials. Consequently, novel material characteristics may arise with new functions for applications. This is especially relevant for inorganic luminescent materials where slight changes in the vicinity of the luminescent centers may originate new emission properties. Here, we studied the luminescent properties of CaS:Eu by introducing europium with oxygen ions by ALD, resulting in a novel CaS:EuO thin film. We study structural and photoluminescent properties of two different ALD deposited Eu doped CaS thin films: Eu(thd)3 which reacted with H2S forming CaS:Eu phosphor, or with O3 originating a CaS:EuO phosphor. It was found that the emission wavelength of CaS:EuO was 625.8 nm whereas CaS:Eu was 647 nm. Thus, the inclusion of O2- ions by ALD in a CaS:Eu phosphor results in the blue-shift of 21.2 nm. Our results show that ALD can be an effective way to introduce additional elements (e.g., anionic elements) to engineer the physical properties (e.g., inorganic phosphor emissions) for photonics and optoelectronics.

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The growth of Er_xGa_2−xO₃films by atomic layer deposition from two different precursor systems

Cited by 16 publications

References 43 publications

Synthesis of Doped, Ternary, and Quaternary Materials by Atomic Layer Deposition: A Review

Synthesis of Doped, Ternary, and Quaternary Materials by Atomic Layer Deposition: A Review

Infrared Matrix Isolation Study of the Thermal and Photochemical Reactions of Ozone with Trimethylgallium

Tuning of Emission Wavelength of CaS:Eu by Addition of Oxygen Using Atomic Layer Deposition

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