The growth of bismuth-based cubic pyrochlore dielectric thin films

Pd@Bi2Ru2O7/BiVO4 Z-Scheme Heterojunction Nanocomposite Photocatalyst for the Degradation of Trichloroethylene

“…In Figure a, the TEM micrograph of pure BiVO 4 exhibits densely aggregated nanosheets. In contrast, the morphology of the bare BRO in Figure presents a layered structure, which could be attributed to the incorporation of octahedral Ru 2 O 6 and tetrahedral Bi 2 O . The TEM image of the 1%BRO/BiVO 4 nanocomposite in Figure c displays an interface between the layered BRO nanosheets and the denser BiVO 4 nanostructures.…”

“…Aurivillius semiconductors are composed of [Bi 2 O 2 ] 2+ layers alternating with pseudo-perovskite slabs in the general formula of (Bi 2 O 2 )­(A n –1 B n O 3 n +1 ), where A and B are transition metals, and n represents the number of octahedral perovskites. , This unique structure creates an internal static electric field that enhances the transfer of photogenerated charge carriers. Bismuth-based Aurivillius oxides, such as BiVO 4 , BiMoO 6 , Bi 2 WO 6 , and Bi 4 Ti 3 O 12 , have demonstrated effective degradation of various organic contaminants. − Pyrochlore bismuth-based oxide semiconductors generally exhibit cubic structures with the formula Bi 2 M 2 O 7 , which consist of alternating layers of octahedral M 2 O 6 and tetrahedral Bi 2 O . The pyrochlores have often been utilized as capacitors, solid oxide fuel cells, and electrocatalysts for chlorine evolution and oxygen evolution reactions (OERs). − Nonetheless, some studies have proved that they can be active materials for photocatalytic and photoelectrochemical applications. − However, the application of Aurivillius and pyrochlore phases in photocatalysis has been mostly limited to molybdenum- and tungsten-based materials. , The pyrochlore structured bismuth ruthenate (Bi 2 Ru 2 O 7 ) semiconductor demonstrated electrocatalytic properties suited for oxygen reduction application. − Nevertheless, the application of bismuth ruthenate in the design of metal oxide heterojunctions for photocatalysis remains a formidable challenge.…”

Low‐temperature dielectric behavior of Sc‐ and In‐doped bismuth titanate pyrochlores

“…1,2 Among the extensive class of compounds with the pyrochlore-type structure, bismuth-containing, especially in ternary systems, Bi 2 O 3 -ZnO(MgO)-Nb 2 O 5 are promising as materials for producing capacitors and highfrequency filters due to the high dielectric constant, low losses, and relatively low sintering temperatures. [3][4][5][6][7][8][9][10][11][12][13][14] Moreover, bismuth titanate pyrochlore Bi 2 Ti 2 O 7 (BTO), prepared in the form of pressed ceramics, single crystals, and thin films, was discussed as the dielectric material. [15][16][17][18] It was revealed the high dielectric constant (115−116), low dielectric losses (0.0064−0.01), and dielectric relaxation process for BTO.…”

Ultrasonic mist chemical vapor deposition and dielectric properties of cubic pyrochlore bismuth magnesium niobate thin films

“…[12][13][14][15][16] A very recent review about the deposition of bismuth-based cubic pyrochlore dielectric thin films indicated that samples which were grown by rf magnetron sputtering, MOCVD, and PLD exhibit better crystallization, smoother surface, higher dielectric constant, and lower dielectric loss than those grown by sol-gel spin-coating, CSD and aerosol deposition. 17) They also pointed out that rf magnetron sputtering and PLD are more efficient and economical than other deposition methods from the viewpoint of practical application because MOCVD needs expensive, toxic and flammable source materials. 17) However, regardless of rf magnetron sputtering and PLD, some typical drawbacks are observed: high kinetic particles mechanically damage grown film samples, and the growth system requires expensive and complicated high-vacuum pump and chambers, pulsed lasers, and sputtering guns.…”

“…17) They also pointed out that rf magnetron sputtering and PLD are more efficient and economical than other deposition methods from the viewpoint of practical application because MOCVD needs expensive, toxic and flammable source materials. 17) However, regardless of rf magnetron sputtering and PLD, some typical drawbacks are observed: high kinetic particles mechanically damage grown film samples, and the growth system requires expensive and complicated high-vacuum pump and chambers, pulsed lasers, and sputtering guns.…”