The growth of benzophenone crystals by Sankaranarayanan–Ramasamy (SR) method and slow evaporation solution technique (SEST): A comparative investigation

Pandian, Muthu Senthil; Boopathi, K.; Ramasamy, P.; Bhagavannarayana, G.

doi:10.1016/j.materresbull.2011.11.052

Cited by 74 publications

(19 citation statements)

References 34 publications

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“…KDP, TGS, ADP, and benzophenone crystal plates of 2 mm thickness were cut and polished from various parts of the crystals along (101), (001), (101), and (101) plane, respectively, and used for optical measurements without any antireflection coating. It is very well evident from Figure a–d that all the grown crystals have good transparency in the visible region which is better than the reported values found in the literature . Table shows the comparison of the transparency of the grown crystals with other methods including the present setup.…”

Section: Resultssupporting

confidence: 39%

Vacuum‐Assisted Technique to Modify the SR Method for Unidirectional Crystal Growth

Sudalai

Jenipriya

Dhas

et al. 2018

Crystal Research and Technology

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The design and fabrication of a vacuum‐assisted Sankaranarayanan–Ramasamy (SR) method is reported by making modifications in the original SR setup for the growth of bulk single crystals with selective orientation at room temperature using volatile solvents. Utilizing this technique, the growth of bulk‐sized and technologically important single crystals, such as KDP, TGS, ADP, and benzophenone, is demonstrated. The powder XRD patterns of the grown crystals are obtained so as to confirm the growth plane of each crystal. UV–visible spectra show good transparency in the entire visible region for the grown crystals. The crystalline perfection of the grown crystals is analyzed using HRXRD. This handy and cost‐effective technique will pave the way for the growth of single crystals satisfying the requirements of the photonic industry.

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Section: Resultssupporting

confidence: 39%

Vacuum‐Assisted Technique to Modify the SR Method for Unidirectional Crystal Growth

Sudalai

Jenipriya

Dhas

et al. 2018

Crystal Research and Technology

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“…From the device point of view, the main factors like being free from scattering centers and being without light absorption at the fundamental region are to be possessed in the NLO crystal . Moreover, if the density of the defect increases, the possibility for the occurrence of the scattering center also increases, which significantly leads to the optical loss in the grown crystals . From this point of view, it can be inferred that the higher density defects lead to the higher scattering centers into the conventional method grown crystal and this consequently reduces the optical transparency as shown in open and closed aperture Z -scan spectra.…”

Section: Resultsmentioning

confidence: 99%

“…22 Moreover, if the density of the defect increases, the possibility for the occurrence of the scattering center also increases, which significantly leads to the optical loss in the grown crystals. 71 From this point of view, it can be inferred that the higher density defects lead to the higher scattering centers into the conventional method grown crystal and this consequently reduces the optical transparency as shown in open and closed aperture Z-scan spectra. In the case of the modified SR method grown crystal, the normalized transmittance appears to be higher compared to the conventional SEST grown crystals due to the superior quality.…”

Section: Table 3 Ftir and Ft-raman Assignments For 2a5npdp Crystalmentioning

confidence: 99%

Evaluation of Linear and Nonlinear Optical Properties of D−π–A Type 2-Amino-5-Nitropyridinium Dihydrogen Phosphate (2A5NPDP) Single Crystal Grown by the Modified Sankaranarayanan–Ramasamy (SR) Method for Terahertz Generation

Vediyappan¹,

Chaudhary

Venkatesh

et al. 2019

Crystal Growth & Design

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We report the growth process and linear and nonlinear optical characterization of high quality improvised semiorganic 2A5NPDP single crystal using the modified SR method for the first time. The major difficulties for the growth of 2A5NPDP single crystal have been resolved with the aid of a temperature lowering method. After optimization of the growth conditions, a transparent 2A5NPDP single crystal was harvested with a size of 85 mm length and 10 mm diameter over a period of 60 days. The growth rate of the modified SR method grown crystal was found to be 10 times higher than that of the conventional slow evaporation solution technique (SEST) grown crystal. The unit cell parameters of the grown crystal were ascertained by the single crystal X-ray diffraction (SXRD) and powder X-ray diffraction (PXRD) techniques. The high crystalline perfection of the crystal was ascertained by using a high-resolution X-ray diffraction (HRXRD) technique. The presence of multifarious functional groups of the 2A5NPDP crystal were confirmed by Fourier transform infrared (FT-IR) and Fourier transform Raman (FT-Raman) spectral analyses. The thermal property was assessed by the thermogravimetric (TG) and differential thermal analysis (DTA). It shows that the grown crystal withstands temperature up to 175 °C. UV–vis–NIR analysis was used to measure the linear optical property while third-order nonlinear optical properties were ascertained using Z-scan and optical limiting (OL) techniques. The optical limiting threshold of conventional method grown crystal is 5.7 mW/cm2, whereas the modified SR method grown crystal is 4.7 mW/cm2. Low value of limiting threshold indicates that the grown crystal has minimum defects. Finally, 800 nm wavelength of 140 fs at 80 MHz repetition rate obtained from a Ti:sapphire oscillator was used for the terahertz (THz) generation between 0.1 and 2.1 THz range. The efficiency of the generated THz signal was measured using another 800 nm wavelength of 40 fs, at 1 kHz repetition rate obtained from a Ti:sapphire amplifier. The generated THz signal is separated out from unconverted 800 nm using Teflon filters, and power is measured using a pyrometer. The maximum conversion efficiency of generated THz signal is on the order of 0.63 × 10–5%.

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“…Crystalline imperfections influence the optical properties, for example light absorption, scattering, refractive index [11], and for practical devices, crystals free from light scattering and absorbing defects are required. It has been previously reported that as density of defect increases, the possibility for the existence of the scattering centers also increases and this is accountable for the optical loss into the crystals [12]. So it can be deduced that higher dislocation density may lead to generation of the scattering centers into the conventionally grown GCC crystals, which accordingly decreases the optical transparency.…”

Section: Uv-vis Nir Spectroscopymentioning

confidence: 98%

Determination of SHG deff by Maker fringes studies on unidirectional grown guanidinium chlorochromate single crystal for NLO device applications

Vivek¹,

Suvitha²,

Jauhar³

et al. 2020

J Opt

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Optically good-quality, organometallic bulk single crystal of guanidinium chlorochromate (GCC) was fruitfully grown by Sankaranarayanan-Ramasamy (SR) method. Translucent (-1-1 2) aligned unidirectional bulk single crystals of diameter 20 mm and length maximum up to 48 mm were grown over the growth period of 23 days with growth rate of 1 mm/day by the SR method. Optical studies reveal very high transmission of the crystal along the growth axis. Microhardness measurement along the growth axis enounces high mechanical stability of the crystal. Laser damage threshold value of 1.11 GW/cm 2 has been determined using Q-switched Nd:YAG laser radiation for GCC single crystal and reported for the first time. The second harmonic generation (SHG) of GCC crystal was investigated by the SHG Maker fringes technique. The refractive index and birefringence value of GCC crystal were found.

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The growth of benzophenone crystals by Sankaranarayanan–Ramasamy (SR) method and slow evaporation solution technique (SEST): A comparative investigation

Cited by 74 publications

References 34 publications

Vacuum‐Assisted Technique to Modify the SR Method for Unidirectional Crystal Growth

Vacuum‐Assisted Technique to Modify the SR Method for Unidirectional Crystal Growth

Evaluation of Linear and Nonlinear Optical Properties of D−π–A Type 2-Amino-5-Nitropyridinium Dihydrogen Phosphate (2A5NPDP) Single Crystal Grown by the Modified Sankaranarayanan–Ramasamy (SR) Method for Terahertz Generation

Determination of SHG deff by Maker fringes studies on unidirectional grown guanidinium chlorochromate single crystal for NLO device applications

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