The growth mechanisms and morphology of C60 films on different substrates

Richter, Asta; Ries, R. E.; Szulzewsky, K.; Pietzak, Bjo ̈rn; Smith, Roger

doi:10.1016/s0039-6028(97)00614-6

Cited by 20 publications

(11 citation statements)

References 27 publications

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“…9͒. These growth morphologies are consistent with those reported by Richter et al 21 but the average sizes of the C 60 crystal grains here are a little larger. It should be noticed that when the substrate was kept at 180°C, to grow the same thickness of pristine C 60 and C 60 /Sb films, the preparation time of the former was about ten times longer than the later.…”

Section: C 60 Film Growth On Glass Substratessupporting

confidence: 93%

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Sb mediated C60 film growth on mica, Si, and glass substrates

Hou

1999

Journal of Applied Physics

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Section: C 60 Film Growth On Glass Substratessupporting

confidence: 93%

“…21 When the glass substrate temperature was kept at 160°C, the growth morphologies of the pristine C 60 film and C 60 /Sb film were almost same ͑Fig. 8͒.…”

Section: C 60 Film Growth On Glass Substratesmentioning

confidence: 96%

Sb mediated C60 film growth on mica, Si, and glass substrates

Hou

1999

Journal of Applied Physics

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“…The technique by which the films were evaporated is described in detail in Ref. [22]. The image shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

Scanning probe microscopy and computer simulations: Complementary techniques for nanostructured materials and thin films

Richter¹,

Smith

2003

Cryst. Res. Technol.

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It is demonstrated how scanning force microscopy in combination with recent simulation techniques and computer power can be used in a complementary way in the analysis and explanation of thin film growth and nanoindentation on crystal surfaces. Simulation techniques such as Monte Carlo models and molecular dynamic models are applied for thin film growth and nanoindentation. The formation of the first molecular layers in the growth of C 60 films on silicon can be modelled by classical molecular dynamics to show the different bonding behaviour between C 60 molecules, which results in hexagonal and cubic structures with stacking faults within the C 60 film. Ab initio calculations of C 60 bonding sites to the silicon surface classify bond types by the length and the energy of the C-Si bonds. Strong binding energies between the C 60 molecule and the Si atoms are obtained to fix the C 60 molecule at a definite position. Different growth modes such as island and layer growth of C 60 films can be studied by Monte Carlo simulations, including diffusion of atoms within the cluster and cluster diffusion over the surface itself. A brief experimental view of the nanoindentation process is given in combination with molecular dynamics simulations for the penetration of the tip into a C 60 surface. The crystal symmetry is reflected during the plastic deformation in the pile-up structure around the indentation hole in relation to the orientation of the indenter and the crystal surface. As an example of these investigations results are given for nanoindentation into the Fe{110} single crystal surface.

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“…Ch0 films are deposited by thermal evaporation in a vacuum chamber on different substrate materials with various thicknesses and a suitable substrate temperatures of approximately 2000C [6]. Since surface roughness is an important factor in nanostructuring and nanohardness measurements the growth mode of the films was extensively studied.…”

Section: Methodsmentioning

confidence: 99%