The growth kinetics of diamond films deposited by hot-filament chemical vapor deposition

Abstract

Articles you may be interested inCompositional mapping of the argon-methane-hydrogen system for polycrystalline to nanocrystalline diamond film growth in a hot-filament chemical vapor deposition system Silver on diamond Schottky diodes formed on boron doped hotfilament chemical vapor deposited polycrystalline diamond filmsThe morphology changes in diamond synthesized by hotfilament chemical vapor depositionThe growth kinetics of diamond film has been studied, grown by a hot-filament chemical vapor deposition method, to obtain a fundamental information for the growth process of diamond from the gas phase. In order to study the growth kinetics of a pure diamond, the deposition conditions for high-quality diamond are first determined and the kinetics study is carried out under these deposition conditions. Diamond film thickness is directly proportional to the deposition time. This indicates that diamond films are deposited in the steady state under these experimental conditions. The variation of growth rate with substrate temperature shows a distinct maximum. The maximum temperature is shifted somewhat to the higher temperature side with increasing methane concentrations. It is found that this behavior is due to the decrease of supersaturation with increasing substrate temperature. However, the growth rate of diamond film increases linearly with methane concentrations. Therefore, the growth rate of diamond film can be described by the rate constant for a first-orderreaction. From the kinetic data of diamond deposition, the deposition rate is controlled by the surface reaction (activation energy of 11 kcal/mol) at the lower temperature range, while the deposition rate is gas phase diffusion controlled (activation energy of 3.8 kcal/mol) at the higher temperature range.

Growth Kinetics of (100), (110), and (111) Homoepitaxial Diamond Films

“…However, despite the commercial importance of high growth rates and the potential for gaining insight into the details of the growth mechanism, only a handful of studies of the growth kinetics of polycrystalline diamond films have been reported. [5][6][7][8][9] There is a clear but unmet need for systematic studies of CVD growth kinetics on individual crystal faces of diamond. Interpretation of the growth kinetics of polycrystalline films is complicated greatly by the presence of both (100) and (111) crystal faces under typical growth conditions, whose relative areas depend on both the substrate temperature and the composition of the gas phase.…”

Atomic H-induced cutting and unzipping of single-walled carbon nanotube carpets with a teepee structure and their enhanced supercapacitor performance

“…In diamond CVD reactors, researchers found that hydrogen atom production decreases with increased methane concentration. [47][48][49][50] In our case, atomic hydrogen etching and cutting effects are found to be very sensitive to the ow rate of CH 4 . Fig.…”

Role of microstructure and structural disorder on tribological properties of polycrystalline diamond films

“…During HFCVD process, various gas phase radicals are produced on and near the hot filament and the chemistry of these radicals on the substrate plays an important role in the growth of diamond film [5,6]. Conventionally, HFCVD grown microcrystalline diamond (MCD) films exhibit a faceted morphology with large surface roughness when it is grown with low CH4 to H2 ratio.…”