The growth and laser characteristics of yttrium-gadolinium-aluminium garnet single crystals

Cockayne, B.; Gasson, D. B.; Findlay, D.J.S.; Goodwin, Donald W.; Clay, R.A.

doi:10.1016/0022-3697(68)90225-4

Cited by 37 publications

(13 citation statements)

References 7 publications

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“…Cockayne et al and Kaminskii et al reported that a single crystal of the garnet structure can be grown when the average ionic radius on the dodecahedral site is less than 0.103 nm. 17,26 Kimura et al obtained pure DyAG by co-doping larger ions, Gd 3+ , and smaller ions, Y 3+ , so that the mean radius of the dodecahedral site was controlled to less than 0.103 nm. 27 Because Ga 3+ was adopted to substitute for the Al 3+ site, the pure GAG phase was obtained, and it was found that an increase in Ga 3+ content favors the formation of pure GAG structure.…”

Section: Journal Of the Electrochemicalmentioning

confidence: 99%

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Preparation of Cerium-Activated GAG Phosphor Powders

Chiang

Tsai

Hon

2007

J. Electrochem. Soc.

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An impure-phase GdAlO 3 usually remains in the product of gadolinium aluminum garnet ͑GAG͒ powder as synthesized. In this study, an attempt to prepare a stable GAG pure-phase powder by substituting small cations ͑Tb 3+ , Y 3+ , or Lu 3+ ͒ at the dodecahedral sites or the substituting the large cation ͑Ga 3+ ͒ for the Al 3+ sites of the garnet structure was made. Pure garnet-phase GAG powder was formed by calcining at 1500°C for 2 h. It was found that increasing the Lu 3+ content in the Gd 3+ lattice site of the dodecahedral or increasing the Ga 3+ content in the Al 3+ site induces a blue shift in the emission wavelength. The color temperature of the pure GAG:Ce ͑YAG:Ce͒ phosphor powder ͑ϳ2900 K͒ formed was lower than that of yttrium aluminum garnet and terbium aluminum garnet ͑TAG:Ce͒ phosphors.

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Section: Journal Of the Electrochemicalmentioning

confidence: 99%

“…16 Cockayne et al attempted to use the melt-growth method to prepare Gd-rich YAG, but the work was unsuccessful. 17 Forming a pure-phase GAG powder seems difficult. In order to form a pure garnet structure, Tb 3+ , Y 3+ , or Lu 3+ were adopted to substitute for Gd 3+ .…”

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confidence: 99%

Preparation of Cerium-Activated GAG Phosphor Powders

Chiang

Tsai

Hon

2007

J. Electrochem. Soc.

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“…In addition, its absorption band well matches the emission wavelength of InGaAs diodes. These advantages are very useful for direct laser pumping, frequency doubling [11,12], as well as high power operation and generating ultra-short pulses in mode-locking operations [13][14][15][16][17][18][19][20] Wavelength, nm Figure 1 (online color at www.lphys.org) The absorption and normalized emission spectra of a 5.0 at.% Yb:GdYAG ceramic net structure [24]. It was reported previously that broad gain spectra could be obtained in the Nd:Gd 0.5 Y 2.5 Al 5 O 12 single crystals [25].…”

Section: Introductionmentioning

confidence: 99%

Diode pumped and mode-locked Yb:GdYAG ceramic lasers

Luo

Zhang

et al. 2011

Laser Phys. Lett.

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Abstract:We have successfully fabricated a new type of ytterbium-doped yttrium gadolinium aluminum garnet (Yb:GdYAG) laser ceramic using the solid-state reactive sintering method under vacuum condition. Continuous wave (CW) laser operation of the 5.0 at.% Yb:GdYAG ceramic laser has achieved 4.27 W output power with 26.7% slope efficiency. Passive mode-locking properties of the ceramic was also firstly demonstrated with a semiconductor saturable absorbing mirror (SESAM). Stable mode-locked pulses with 4.4 ps pulse width and a maximum output power of 3.75 W at the wavelength of 1030.4 nm have been generated. Output power of mode-locked Yb:GdYAG ceramic laser with respect to the incident pump power

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“…% La 3 . Compared to the Nd:GGG crystal, the Nd:LaGGG crystal has a lower melting temperature and a higher Nd 3 segregation coefficient owing to the larger radius of La 3 ions (106.1 pm) than that of Gd 3 ions (93.8 pm) [7], which would benefit the crystal growth. As Fu et al have previously reported, the excited state fluorescence lifetime of Nd:LaGGG (243 μs) was longer than that of Nd:GGG(180 μs), which indicated that the Nd:LaGGG crystal could have a better capacity of power storage than that of Nd:GGG [6,8].…”

Section: Introductionmentioning

confidence: 99%

High-power passively mode-locked laser at 10624 nm based on Nd:LaGGG disordered crystal

Zhao

Zhang

et al. 2015

Appl. Opt.

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A diode-pumped passively continuous-wave mode-locked Nd:(La(x)Gd(1-x))3Ga5O12 (Nd:LaGGG) laser at 1062.4 nm with a semiconductor saturable absorber mirror was demonstrated for the first time, to the best of our knowledge. Pulses with duration of 12.78 ps were produced at a repetition rate of 59.8 MHz. A maximum average mode-locked output power of 3.18 W was obtained at the absorbed pumped power of 10.12 W, corresponding to a slope efficiency of 35.7% and a peak power of 4.2 kW. As far as we know, this is the highest power obtained in the passively mode-locking operation with Nd3+-doped disordered garnet crystals.

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The growth and laser characteristics of yttrium-gadolinium-aluminium garnet single crystals

Cited by 37 publications

References 7 publications

Preparation of Cerium-Activated GAG Phosphor Powders

Preparation of Cerium-Activated GAG Phosphor Powders

Diode pumped and mode-locked Yb:GdYAG ceramic lasers

High-power passively mode-locked laser at 10624 nm based on Nd:LaGGG disordered crystal

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