2001
DOI: 10.1134/1.1402211
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The growth and domain structure of YBa2Cu3Ox films on neodymium gallate substrates with a deviation of the normal to the surface from the [110] direction in NdGaO3

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Cited by 6 publications
(7 citation statements)
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“…The studies of epitaxial growth in semiconductor het-434 erostructures showed that the tilt axis acts as an anchor setting 435 the initial epitaxial relation along the habit plane. Similarly, in 436 our previous studies [19][20][21] the 100 axes of the perovskite 437 films and the 110 axes of the fluorite films were parallel to 438 the substrate tilt axis [001] NGO for all deposition conditions. 439 In this study we assumed that this epitaxial relation remains 440 correct and limited the XRD studies to θ/2θ and ω scans 441 around the substrate tilt axis with an initial offset angle ω 0 .…”
mentioning
confidence: 59%
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“…The studies of epitaxial growth in semiconductor het-434 erostructures showed that the tilt axis acts as an anchor setting 435 the initial epitaxial relation along the habit plane. Similarly, in 436 our previous studies [19][20][21] the 100 axes of the perovskite 437 films and the 110 axes of the fluorite films were parallel to 438 the substrate tilt axis [001] NGO for all deposition conditions. 439 In this study we assumed that this epitaxial relation remains 440 correct and limited the XRD studies to θ/2θ and ω scans 441 around the substrate tilt axis with an initial offset angle ω 0 .…”
mentioning
confidence: 59%
“…12. Comparison of tilt of CeO 2 films on NGO TAS deposited by PLD (diamonds) and rf sputtering (squares, [19,20]) at high substrate tilt angles.…”
Section: B Growth Modes and Modelsmentioning
confidence: 99%
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