The grain–grain–liquid triple phase line during solidification of multi-crystalline silicon

Duffar, T.; Nadri, Amal

doi:10.1016/j.crhy.2012.12.003

Cited by 34 publications

(20 citation statements)

References 25 publications

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“…According to the model of Duffar and Nadri [43] and experimentally confirmed by Tandjaoui et al [27], at the grain e grain e liquid triple phases, that correspond to the intersection of a grain boundary with the solid/liquid interface, grain boundary grooves are formed and can have one of the following three configurations, depending on the crystallographic orientations of the adjacent grains: i) rough solid e liquid interface on both sides of the groove, ii) rough/facetted groove, iii) facetted/facetted groove. The facets that form the groove have {111} crystallographic orientation.…”

Section: Grain Competition and Twin Nucleation At The Solid E Solid Ementioning

confidence: 99%

In situ investigation of the structural defect generation and evolution during the directional solidification of 〈110〉 seeded growth Si

et al. 2016

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a b s t r a c tThis work is dedicated to the advanced in situ X-ray imaging and complementary ex situ investigations of the growth mechanisms when silicon solidifies on a monocrystalline seed oriented 〈110〉 in the solidification direction. It aims at deepening the fundamental understanding of the phenomena that occur throughout silicon crystal growth with a particular focus on mechanisms of formation of defects detrimental for photovoltaic applications. Namely, grain nucleation, grain boundary formation and evolution, grain competition, twining occurrence, dislocation generation and interaction with structural defects are explored and analysed. Nucleation of twin crystals preferentially occurs on {111} facets at the edge of the sample where solid e liquid e vapor triple point lines exist in interaction also with the crucible as well as, at grain boundary grooves at the solid e liquid interface (solid e solid e liquid triple lines), where two grains are in competition, either on the {111} facets of the groove or in the groove. Enhanced undercooling and/or stress accumulation levels are found to act as driving forces for grain nucleation. Additionally, it is demonstrated that twin formation has the property to relax stresses stored in the crystal during the growth process. However, grains formed initially in twin position can undergo severe distortion when they are in direct competition or when they are squeezed in e between grains. Moreover, we show by X-ray Bragg diffraction imaging that on the one hand, coherent S3 〈111〉 grain boundaries efficiently block the propagation of growth dislocations during the solidification process, while on the other hand, dislocations are emitted at the level of incoherent and/or asymmetric S27a 〈110〉 at the encounter with either S3 〈111〉 or S9 〈110〉 grain boundaries. Indeed, grain boundaries that deviate from the ideal coincidence orientation act as dislocation sources that spread inside the surrounding crystals.

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Section: Grain Competition and Twin Nucleation At The Solid E Solid Ementioning

confidence: 99%

In situ investigation of the structural defect generation and evolution during the directional solidification of 〈110〉 seeded growth Si

et al. 2016

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“…13 Such studies on silicon single crystals indicate that the theory of Mullins and Sekerka can apply to materials having an anisotropic crystal/melt interfacial energy as well as materials having an isotropic crystal/melt interfacial energy, although the further accumulation of experimental/theoretical evidence is still required. On the other hand, the interface instability of polycrystalline materials with grain boundaries or twin boundaries is still not clarified, while the phenomena at the crystal/melt interface of polycrystalline silicon, such as grain boundary grooves [14][15][16][17] and grain growth, [18][19][20] have attracted considerable attention recently.…”

mentioning

confidence: 99%

Instability of crystal/melt interface including twin boundaries of silicon

Fujiwara

Tokairin

Pan

et al. 2014

Applied Physics Letters

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“…Grain boundary grooves can have one of the three following configurations, depending on the crystallographic orientation of the adjacent grains [5,9]: i) rough solid-liquid interface on both sides of the groove ii) rough/facetted groove and iii) facetted/facetted groove, when the grain boundary groove consists of two facets. It is essential to study the groove dynamics as it is directly linked to the grain competition [10] because of its interdependence with the grain boundary orientation relatively to the solidified direction [11].…”

Section: Introductionmentioning

confidence: 99%