The grain boundary character distribution of highly twinned nanocrystalline thin film aluminum compared to bulk microcrystalline aluminum

Rohrer, Gregory S.; Li, Xuan; Liu, Jiaxing; Darbal, Amith; Kelly, Madeleine N.; Chen, Xiwen; Berkson, Michael A.; Nuhfer, Noel T.; Coffey, Kevin R.; Barmak, K.

doi:10.1007/s10853-017-1112-8

Cited by 24 publications

(23 citation statements)

References 54 publications

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“…In general, this structure is formed by thermal annealing using a furnace or rapid thermal equipment following deposition with silver [6]. The physical properties of the Al film strongly depend on its microstructure [7,8]; therefore, by controlling the microstructure, it is possible to govern the film's properties [9][10][11].…”

Section: Introductionmentioning

confidence: 99%

Deposition of Al Thin Film on Steel Substrate: The Role of Thickness on Crystallization and Grain Growth

Khachatryan

Lee

Kim

et al. 2018

Metals

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In this study, we deposited aluminum (Al) films of different thicknesses on steel substrate and examined their phase, microstructure, and film growth process. We estimated that films of up to 30 nm thickness were mainly amorphous in nature. When the film thickness exceeded 30 nm, crystallization was observed. The further increase in film thickness triggered grain growth, and the formation of grains up to 40 nm occurred. In such cases, the Al film had a cross-grained structure with well-developed primary grains networks that were filled with small secondary grains. We demonstrated that the microstructure played a key role in optical properties. The films below 30 nm showed higher specular reflection, whereas thicker films showed higher diffuse reflections.

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Section: Introductionmentioning

confidence: 99%

Deposition of Al Thin Film on Steel Substrate: The Role of Thickness on Crystallization and Grain Growth

Khachatryan

Lee

Kim

et al. 2018

Metals

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“…Σ3 boundaries constitute approximately one quarter of all the boundaries in this sample. In contrast, for a "bulk" aluminum sample, i.e., in an aluminum sample with mean grain size of 23 𝜇m, the population of Σ3 boundaries is more than ten times lower [31]. The very high population of Σ3 boundaries in the thin film sample of Figure 3 is likely a result of the structure forming processes that take place during film deposition, rather than a result of normal grain growth.…”

Section: Experimental Results: Grain Boundary Character Distributionmentioning

confidence: 90%

“…Figure 3 presents the GBCD for four different misorientations for an as-deposited aluminum film with near random orientation distribution. The details of film deposition, sample preparation and precession electron diffraction crystal orientation mapping in the transmission electron microscope are given in [31]. However, in contrast to [31], the orientation data were subjected to the same cleanup procedure as for the grain size distribution, namely the pseudosymmetry cleanup procedure detailed in [24] with the exception of the 60°|[111] boundaries, which are clearly abundant and should not be removed.…”

Section: Experimental Results: Grain Boundary Character Distributionmentioning

confidence: 99%

Grain Growth and the Effect of Different Time Scales

Barmak¹,

Dunca²,

Epshteyn³

et al. 2021

Preprint

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Many technologically useful materials are polycrystals composed of a myriad of small monocrystalline grains separated by grain boundaries. Dynamics of grain boundaries play a crucial role in determining the grain structure and defining the materials properties across multiple scales. In this work, we consider two models for the motion of grain boundaries with the dynamic lattice misorientations and the triple junctions drag, and we conduct extensive numerical study of the models, as well as present relevant experimental results of grain growth in thin films.

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“…Many previous works have reported that the GBs show a strong preference for some special GB planes when the lattice misorientation of the two adjacent grains is specified [ 7 , 8 , 9 , 54 , 61 , 62 , 63 ]. It was speculated that these preferred GBs generally have lower GBE, and every preferred GB always has almost the lowest GBE of the GBs with the same lattice misorientation.…”

Section: Resultsmentioning

confidence: 99%

Survey of Grain Boundary Energies in Tungsten and Beta-Titanium at High Temperature

Wang

2021

Materials

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Heat treatment is a necessary means to obtain desired properties for most of the materials. Thus, the grain boundary (GB) phenomena observed in experiments actually reflect the GB behaviors at relatively high temperature to some extent. In this work, 405 different GBs were systematically constructed for body-centered cubic (BCC) metals and the grain boundary energies (GBEs) of these GBs were calculated with molecular dynamics for W at 2400 K and β-Ti at 1300 K and by means of molecular statics for Mo and W at 0 K. It was found that high temperature may result in the GB complexion transitions for some GBs, such as the Σ11{332}{332} of W. Moreover, the relationships between GBEs and sin(θ) can be described by the functions of the same type for different GB sets having the same misorientation axis, where θ is the angle between the misorientation axis and the GB plane. Generally, the GBs tend to have lower GBE when sin(θ) is equal to 0. However, the GB sets with the <110> misorientation axis have the lowest GBE when sin(θ) is close to 1. Another discovery is that the local hexagonal-close packed α phase is more likely to form at the GBs with the lattice misorientations of 38.9°/<110>, 50.5°/<110>, 59.0°/<110> and 60.0°/<111> for β-Ti at 1300 K.

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The grain boundary character distribution of highly twinned nanocrystalline thin film aluminum compared to bulk microcrystalline aluminum

Cited by 24 publications

References 54 publications

Deposition of Al Thin Film on Steel Substrate: The Role of Thickness on Crystallization and Grain Growth

Deposition of Al Thin Film on Steel Substrate: The Role of Thickness on Crystallization and Grain Growth

Grain Growth and the Effect of Different Time Scales

Survey of Grain Boundary Energies in Tungsten and Beta-Titanium at High Temperature

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