The Generation of Stimulated Radiation and the High‐Temperature Photoluminescence in Cd<sub>X</sub>Hg<sub>1−X</sub>Te Layers

Ivanov-Omskiĭ, V. I.; Mekhtiev, A. Sh.; Rustamov, Rustam B.; Smirnov, V.

doi:10.1002/pssb.2221300150

Cited by 4 publications

(1 citation statement)

References 2 publications

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“…The presence of the acceptor level with energy ~30 meV, mentioned in some papers by other research groups [35,50], was confirmed for epitaxial MCT films grown from stoichiometric melts on CdTe substrate [59]. Also, a deeper level with energy of ~70 meV was found for this type of samples in PL experiments [60] (see also [56]). In the latter work, room-temperature PL from MCT samples was also detected.…”

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confidence: 65%

Photoluminescence in Mercury Cadmium Telluride – a Historical Perspective. Part I: 1966-1996

Ruzhevich¹,

Mynbaev²

2020

Rev. Adv. Mater. Technol.

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This work presents a historical perspective on the studies of photoluminescence in mercury cadmium telluride (HgCdTe), one of the most important materials of infrared photoelectronics. The first part of the review considers the results of the studies performed during the early years of the development of the technology of this material (1966-1996). These studies were carried out mostly using samples of bulk crystals and epitaxial films grown by liquid-phase epitaxy. The results of the studies allowed for identification of the nature of optical transitions in HgCdTe, including excitonic emission, interband recombination, donor-acceptor pair recombination and recombination via shallow and deep levels, which greatly helped in maturing the material technology.

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supporting

confidence: 65%

Photoluminescence in Mercury Cadmium Telluride – a Historical Perspective. Part I: 1966-1996

Ruzhevich¹,

Mynbaev²

2020

Rev. Adv. Mater. Technol.

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Optical Properties of MCT

Chu

Chang

2010

Mercury Cadmium Telluride

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Infrared photoluminescence ‐ a tool for HgCdTe crystal research

Tomm

Schmidt

Werner

et al. 1990

Cryst. Res. Technol.

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Material and structural parameters of narrow-gap p-type HgCdTe are investigated by infrared photoluminescence. The method is used for analyzing the energy gap, the carrier lifetime, and heterointerfaces and to monitor defects like inclusions. The spatial distribution of the quantities mentioned has been investigated by applying the mapping technique known for 111 -V semiconductors. The method is a powerful tool for both crystal growth and device manufacturing. Material-und Struktureigenschaften des schmalliickigen Halbleiters p-HgCdTe werden mittelsInfrarot-Photolumineszenz untersucht. Dabei werden die Breite der Energieliicke, die Tragerlebensdauer und Heterogrenzen untersucht sowie Einschliisse sichtbar gemacht. Durch Anwendung des von den I11 -V-Halbleitern her bekannten Abtastverfahrens kann die raumliche Verteilung der genannten GroDen sichtbar gemacht werden. Photolumineszenz kann als prozeDbegleitende Methode sowohl bei der Kristallziichtung als auch bei der Bauelementeentwicklung eingesetzt werden.

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The Generation of Stimulated Radiation and the High‐Temperature Photoluminescence in Cd_XHg_1−XTe Layers

Cited by 4 publications

References 2 publications

Photoluminescence in Mercury Cadmium Telluride – a Historical Perspective. Part I: 1966-1996

Photoluminescence in Mercury Cadmium Telluride – a Historical Perspective. Part I: 1966-1996

Optical Properties of MCT

Infrared photoluminescence ‐ a tool for HgCdTe crystal research

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The Generation of Stimulated Radiation and the High‐Temperature Photoluminescence in CdXHg1−XTe Layers

Cited by 4 publications

References 2 publications

Photoluminescence in Mercury Cadmium Telluride – a Historical Perspective. Part I: 1966-1996

Photoluminescence in Mercury Cadmium Telluride – a Historical Perspective. Part I: 1966-1996

Optical Properties of MCT

Infrared photoluminescence ‐ a tool for HgCdTe crystal research

Contact Info

Product

Resources

About

The Generation of Stimulated Radiation and the High‐Temperature Photoluminescence in Cd_XHg_1−XTe Layers