The Fractal Simulation Image of the Quantum Generator

Abstract

Development and creation of semiconductor devices updates a problem of the preliminary modeling allowing lowering substantially costs of carrying out scientific and technological research. In the presented material of work information approach on creation of fractal model of the semiconductor structure taking into account atomic designs of chemical elements providing a possibility of a priori research and calculation of standard indicators of working processes of the semiconductor is considered. The methodological basis of process of modeling of semiconductors is represented a basis for development of heterogeneous designs.