The formation of silicon carbide films from disilane derivatives

Hengge, E.; Zechmann, A.; Hofer, Ferdinand; Pölt, Peter; Lux, B.; Danzinger, M.; Haubner, Roland

doi:10.1002/adma.19940060713

Cited by 4 publications

(2 citation statements)

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“…1,2-dimethyldisilanea colorless liquid with a boiling point of 48°Chas been synthesized at the TU-Graz in sufficiently large amounts for CVD reactions, and its preparation method has been presented elsewhere [27]. The compound is volatile and stable for short times in air at room temperature.…”

Section: Precursor and Substratementioning

confidence: 99%

“…The pyrolytic formation of S i c showed that both S i c coatings and powders can be formed simultaneously by thermal decomposition at elevated temperatures. The precursor is easy to handle, is inexpensive and has a carbon-to-silicon ratio corresponding exactly to the stoichiometric ratio of S i c [27]. For the present work a cold-wall upstream reactor was designed which made Sic deposition possible without simultaneous powder formation.…”

Section: Introductionmentioning

confidence: 99%

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Preparation of β-SiC Coatings Using 1,2-Dimethyldisilane as Precursor

et al. 1995

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A cold-wall upstream reactor was designed to study the deposition of P-Sic layers on WC-Co hard metal substrates. Experiments demonstrated that P-Sic coatings can be easily deposited on inductively heated substrates at temperatures between 1000-1400°C by thermal decomposition of 1,2-dimethyldisilane under normal pressure conditions. It was shown that this silicon compound is an advanced precursor for the preparation of P-Sic coatings. The reaction temperature influenced the S i c growth rate as well as the microstructure of the coating. Different reaction mechanisms occurred at these temperatures. Fine grained cauliflower-like coatings were obtained below 1100°C while monolithically crystallised coatings were formed above 1200°C. These morphological differences are associated with the coating growth rates, which reached a maximum at 1100°C and decreased rapidly at higher temperatures. The precursor concentration in the reaction gas had to be kept relatively low in order to obtain homogeneous, crystalline Sic coatings and to prevent "smoking", i.e. nucleation of fine particles in the gas phase.

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Section: Precursor and Substratementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%