The formation of silicides in Mo-W Bilayer films on si substrates: A marker experiment

Baglin, J. E. E.; Dempsey, J.; Hammer, W.; d’Heurle, F. M.; Petersson, S.; Serrano, C. M.

doi:10.1007/bf02657084

Cited by 79 publications

(16 citation statements)

References 32 publications

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“…If the final silicide phase is stoichiometrically metal-rich, then the metal is the dominating diffusing species [36,37]. Alternately, if the silicide is stoichiometrically silicon-rich, then the dominating diffusion species is silicon [36,37]. This implies that magnesium is the dominant diffusing species and diffuses around the nuclei during the growth phase.…”

Section: Resultsmentioning

confidence: 99%

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A simple phase transformation strategy for converting silicon nanowires into metal silicide nanowires: Magnesium silicide

2013

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Section: Resultsmentioning

confidence: 99%

“…3). Even though both magnesium and silicon can diffuse inside the nanowire during the growth phase, it is well known that the dominant diffusing species is dependent on the final composition of the silicide [36,37]. If the final silicide phase is stoichiometrically metal-rich, then the metal is the dominating diffusing species [36,37].…”

Section: Resultsmentioning

confidence: 99%

A simple phase transformation strategy for converting silicon nanowires into metal silicide nanowires: Magnesium silicide

2013

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“…In the previously reported results on the reaction in Ta-W/Si systems, 27,28 it was reported that silicide formation was delayed to higher temperatures in alloys with W-rich composition. Because the Si atoms were quite mobile ͑as compared with those of transition metals such as Ta or W͒ in the silicidation reaction at temperatures of 600-700°C, [31][32][33] we anticipated that the kinetics of the present reaction are dominated by Si diffusion, and thus, phase separation of silicides was implausible. However, AES depth profiles in Figs.…”

Section: Silicide Formation In Cu/ Ta 1−x W X / Si Contactsmentioning

confidence: 97%

Diffusion-barrier properties of Ta1−xWx alloy films and silicidation-induced Cu penetration in Cu∕Si contacts

Noya

Takeyama

Sase

2005

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Thin film reaction of transition metals with germaniumAlloy films of Ta 1−x W x were prepared by co-sputtering and their diffusion-barrier properties in Cu/ Si contacts were examined. The alloy films over 30 at. % of the W composition were in a state of substitutional solid solution, and the resistivity of 100-nm-thick film was ϳ45 ⍀ cm, at most. In the Cu/ Ta 1−x W x / Si contacts, the silicidation temperature of 680°C was higher than that reported for the Cu/Ta/Si or Cu/W/Si contact. We confirmed for the Cu/ Ta 0.5 W 0.5 / Si contact that Cu penetration into the Si substrate was completely suppressed by a thin amorphous interfacial layer upon annealing at temperatures below that of silicidation reaction. It was revealed that at more elevated temperatures, an extremely small amount of Cu atoms was incorporated into the silicide layer at the Ta 0.5 W 0.5 / Si interface during reaction and penetrated into the Si substrate through the silicide layer.

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“…One should, however, admit that in many applications silicides are grown by a diffusion controlled process mainly in thin film conditions. Because of this, most of the studies to date are available under these conditions [5,6,[20][21][22][23][24][25][26][27][28][29][30][31][32][33][34][35][36][37][38]. Although more than one phase is present in all these systems, mainly disilicides were found at the interface.…”

Section: Introductionmentioning

confidence: 99%

Diffusion pattern in MSi₂and M₅Si₃silicides in group VB (M = V, Nb, Ta) and VIB (M = Mo, W) refractory metal-silicon systems

Roy

Prasad

Divinski

et al. 2014

Philosophical Magazine

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To cite this article: Soumitra Roy, Soma Prasad, Sergiy V. Divinski & Aloke Paul (2014) Diffusion pattern in MSi 2 and M 5 Si 3 silicides in group VB (M = V, Nb, Ta) and VIB (M = Mo, W) refractory metalsilicon systems, Philosophical Magazine, 94:14, 1508-1528, Group VB and VIB M-Si systems are considered to show an interesting pattern in the diffusion of components with the change in atomic number in a particular group (M = V, Nb, Ta or M = Mo, W, respectively).Mainly two phases, MSi 2 and M 5 Si 3 are considered for this discussion. Except for Ta-silicides, the activation energy for the integrated diffusion of MSi 2 is always lower than M 5 Si 3 . In both phases, the relative mobilities measured by the ratio of the tracer diffusion coefficients,, decrease with an increasing atomic number in the given group. If determined at the same homologous temperature, the interdiffusion coefficients increase with the atomic number of the refractory metal in the MSi 2 phases and decrease in the M 5 Si 3 ones. This behaviour features the basic changes in the defect concentrations on different sublattices with a change in the atomic number of the refractory components.

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The formation of silicides in Mo-W Bilayer films on si substrates: A marker experiment

Cited by 79 publications

References 32 publications

A simple phase transformation strategy for converting silicon nanowires into metal silicide nanowires: Magnesium silicide

A simple phase transformation strategy for converting silicon nanowires into metal silicide nanowires: Magnesium silicide

Diffusion-barrier properties of Ta1−xWx alloy films and silicidation-induced Cu penetration in Cu∕Si contacts

Diffusion pattern in MSi₂and M₅Si₃silicides in group VB (M = V, Nb, Ta) and VIB (M = Mo, W) refractory metal-silicon systems

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The formation of silicides in Mo-W Bilayer films on si substrates: A marker experiment

Cited by 79 publications

References 32 publications

A simple phase transformation strategy for converting silicon nanowires into metal silicide nanowires: Magnesium silicide

A simple phase transformation strategy for converting silicon nanowires into metal silicide nanowires: Magnesium silicide

Diffusion-barrier properties of Ta1−xWx alloy films and silicidation-induced Cu penetration in Cu∕Si contacts

Diffusion pattern in MSi2and M5Si3silicides in group VB (M = V, Nb, Ta) and VIB (M = Mo, W) refractory metal-silicon systems

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Diffusion pattern in MSi₂and M₅Si₃silicides in group VB (M = V, Nb, Ta) and VIB (M = Mo, W) refractory metal-silicon systems