2013
DOI: 10.1063/1.4819759
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The formation of double-row oxide stripes during the initial oxidation of NiAl(100)

Abstract: The initial growth of ultrathin aluminum oxide film during the oxidation of NiAl(100) was studied with scanning tunneling microscopy. Our observations reveal that the oxide film grows initially as pairs of a double-row stripe structure with a lateral size equal to the unit cell of θ-Al2O3. These double-row stripes serve as the very basic stable building units of the ordered oxide phase for growing thicker bulk-oxide-like thin films. It is shown that the electronic properties of these ultrathin double-row strip… Show more

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Cited by 18 publications
(25 citation statements)
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“…LEED was used to verify the formation and structure of the oxide films formed from the in situ oxidation. The LEED patterns of the oxide films indicate a well-ordered (2 × 1, 1 × 2) structure (10,11), which is in accordance with the formation of θ-Al 2 O 3 films adopting the Bain epitaxy relationship between the fcc structure of the oxygen-sublattice and bcc structure of the NiAl substrate [i.e., (001) (7,(24)(25)(26).…”
Section: Methodsmentioning
confidence: 67%
See 1 more Smart Citation
“…LEED was used to verify the formation and structure of the oxide films formed from the in situ oxidation. The LEED patterns of the oxide films indicate a well-ordered (2 × 1, 1 × 2) structure (10,11), which is in accordance with the formation of θ-Al 2 O 3 films adopting the Bain epitaxy relationship between the fcc structure of the oxygen-sublattice and bcc structure of the NiAl substrate [i.e., (001) (7,(24)(25)(26).…”
Section: Methodsmentioning
confidence: 67%
“…Low-energy electron microscopy (LEEM), capable of imaging surfaces in video rate during gas exposure and at elevated temperatures, has been used to visualize the initial oxidation of NiAl(110), revealing the formation of aluminum oxide stripes that can elongate from one substrate terrace to the next by overgrowing surface steps (1)(2)(3). A similar stripe morphology of aluminum oxide has also been observed in NiAl(100) oxidation, although a detailed explanation of the mechanisms of the oxide growth is lacking (4)(5)(6)(7)(8)(9)(10)(11). Here, we use in situ LEEM observations of the initial-stage oxidation of NiAl(100) at elevated temperatures to quantitatively relate the Al 2 O 3 growth to the mass transfer process on the NiAl(100) surface.…”
mentioning
confidence: 99%
“…3 Unsymmetrical lattice misfit at the film-substrate interface and anisotropic strain has also been invoked to cause anisotropic island shapes. [4][5][6] Structural anisotropy is important in view of several applications, as it can endow the system with directional transport in wave-guides, sensors, and other nanodevice systems. 7,8 Here, we describe the formation of nanostripes with very high aspect ratios of a two-dimensional (2D) manganese oxide phase on a metal surface using a physical vapor deposition method.…”
mentioning
confidence: 99%
“…Even for a crystalline Al 2 O 3 , thin oxide stripes with the thickness as thin as ∼1 Å were observed from the oxidation of NiAl(100). 22 We also point out that this manner of the increase in the limiting thickness of the oxide film is different from the oxidation of an Al(111) surface by molecular oxygen or water vapor, for which the limiting thickness of the oxide film remains essentially constant at the pressure of ∼1 Torr for molecular oxygen 23,24 or 1 × 10 −2 Torr for water vapor, 21 irrespective of prolonged oxygen or water vapor exposure and further increase in oxygen or vapor pressure. Although the oxidation of the NiAl(100) surface by water vapor also shows stepwise growth of the limiting thickness of the passivating film with the stepwise increase in water vapor pressure, we find here that the limiting thickness increases in a stepwise manner only until a water vapor pressure of p(H 2 O) = 1 × 10 −2 Torr is reached.…”
Section: Resultsmentioning
confidence: 76%